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FQB44N10TM

FQB44N10TM
Mfr. #:
FQB44N10TM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 100V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQB44N10TM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
43.5 A
Rds On - Drain-Source-Widerstand:
39 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
3.75 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
FQB44N10
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
30 S
Abfallzeit:
100 ns
Produktart:
MOSFET
Anstiegszeit:
190 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
90 ns
Typische Einschaltverzögerungszeit:
19 ns
Teil # Aliase:
FQB44N10TM_NL
Gewichtseinheit:
0.045856 oz
Tags
FQB44N10T, FQB44N1, FQB44, FQB4, FQB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 100 V, 43.5 A, 52 mΩ, D2PAK
*** Source Electronics
Trans MOSFET N-CH 100V 43.5A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 43.5A D2PAK
***ure Electronics
N-Channel 100 V 0.039 Ohm 48 nC SMT QFET Mosfet - TO-263-3
***roFlash
Power Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:43.5A; On Resistance, Rds(on):0.039ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:2-TO-263 ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Teil # Mfg. Beschreibung Aktie Preis
FQB44N10TM
DISTI # V72:2272_06301134		ON Semiconductor100V N-CHANNEL QFET800
  • 500:$0.8683
  • 250:$0.9648
  • 100:$1.0720
  • 25:$1.3531
  • 10:$1.3787
  • 1:$1.7745
FQB44N10TM
DISTI # V79:2366_17777658		ON Semiconductor100V N-CHANNEL QFET650
  • 800:$0.8028
  • 100:$1.0983
  • 10:$1.3580
  • 1:$1.7612
FQB44N10TM
DISTI # V36:1790_06301134		ON Semiconductor100V N-CHANNEL QFET0
  • 800:$0.7640
FQB44N10TM
DISTI # FQB44N10TMTR-ND		ON SemiconductorMOSFET N-CH 100V 43.5A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 5600:$0.7961
  • 2400:$0.8267
  • 1600:$0.8879
  • 800:$0.9676
FQB44N10TM
DISTI # FQB44N10TMCT-ND		ON SemiconductorMOSFET N-CH 100V 43.5A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		800In Stock
  • 100:$1.4192
  • 10:$1.7660
  • 1:$1.9600
FQB44N10TM
DISTI # FQB44N10TMDKR-ND		ON SemiconductorMOSFET N-CH 100V 43.5A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		800In Stock
  • 100:$1.4192
  • 10:$1.7660
  • 1:$1.9600
FQB44N10TM
DISTI # 30353773		ON Semiconductor100V N-CHANNEL QFET800
  • 500:$0.8683
  • 250:$0.9648
  • 100:$1.0720
  • 25:$1.3531
  • 11:$1.3787
FQB44N10TM
DISTI # 32925038		ON Semiconductor100V N-CHANNEL QFET800
  • 4800:$0.6089
  • 3200:$0.6137
  • 1600:$0.6216
  • 800:$0.6256
FQB44N10TM
DISTI # 26111917		ON Semiconductor100V N-CHANNEL QFET650
  • 800:$0.8630
  • 100:$1.1807
  • 15:$1.4599
FQB44N10TM
DISTI # FQB44N10TM		ON SemiconductorTrans MOSFET N-CH 100V 43.5A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB44N10TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 233600
  • 8000:€0.5749
  • 4800:€0.6189
  • 3200:€0.6709
  • 1600:€0.7319
  • 800:€0.8949
FQB44N10TM
DISTI # FQB44N10TM		ON SemiconductorTrans MOSFET N-CH 100V 43.5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB44N10TM)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 1600
  • 8000:$0.6149
  • 4800:$0.6309
  • 3200:$0.6389
  • 1600:$0.6469
  • 800:$0.6509
FQB44N10TM
DISTI # FQB44N10TM		ON SemiconductorTrans MOSFET N-CH 100V 43.5A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FQB44N10TM)
RoHS: Compliant
Min Qty: 358
Container: Bulk		Americas - 0
  • 3580:$0.8639
  • 1790:$0.8859
  • 1074:$0.8969
  • 716:$0.9089
  • 358:$0.9149
FQB44N10TM
DISTI # FQB44N10TM		ON SemiconductorTrans MOSFET N-CH 100V 43.5A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB44N10TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 40000:$0.7936
  • 20000:$0.8068
  • 8000:$0.8347
  • 4000:$0.8645
  • 2400:$0.8965
  • 1600:$0.9310
  • 800:$0.9682
FQB44N10TM
DISTI # 38C7246		ON SemiconductorN CH MOSFET, 100V, 43.5A, D2-PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:43.5A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes0
  • 9600:$0.7500
  • 2400:$0.7730
  • 800:$0.8450
  • 1:$0.8500
FQB44N10TM
DISTI # 512-FQB44N10TM		ON SemiconductorMOSFET 100V N-Channel QFET
RoHS: Compliant		1133
  • 1:$1.6300
  • 10:$1.3900
  • 100:$1.1100
  • 500:$0.9750
  • 800:$0.8080
FQB44N10TMON SemiconductorPower Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		800
  • 1000:$0.9200
  • 500:$0.9700
  • 100:$1.0100
  • 25:$1.0500
  • 1:$1.1300
FQB44N10TMFairchild Semiconductor CorporationPower Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		30160
  • 1000:$0.9200
  • 500:$0.9700
  • 100:$1.0100
  • 25:$1.0500
  • 1:$1.1300
FQB44N10TMFairchild Semiconductor Corporation 80
    FQB44N10TM
    DISTI # 6710895    		ON SemiconductorMOSFET N-CHANNEL 100V 43.5A D2PAK, EA421
    • 500:£0.5300
    • 250:£0.5800
    • 100:£0.6100
    • 25:£0.7700
    • 1:£2.0000
    FQB44N10TM
    DISTI # 6710895P    		ON SemiconductorMOSFET N-CHANNEL 100V 43.5A D2PAK, RL5553
    • 500:£0.5300
    • 250:£0.5800
    • 100:£0.6100
    • 25:£0.7700
    FQB44N10TM
    DISTI # XSKDRABV0019384    		ON SEMICONDUCTORN-Channel1000V800mA21FlangeMountDepletionModePowerMosfet-TO-220
    RoHS: Compliant    		171200 in Stock0 on Order
    • 171200:$0.8680
    • 800:$0.9300
    Bild Teil # Beschreibung
    BC857BLT1G

    Mfr.#: BC857BLT1G

    OMO.#: OMO-BC857BLT1G

    		 Bipolar Transistors - BJT 100mA 50V PNP
    BC857BLT1G

    Mfr.#: BC857BLT1G

    OMO.#: OMO-BC857BLT1G-ON-SEMICONDUCTOR

    		 Bipolar Transistors - BJT 100mA 50V PNP
    Verfügbarkeit
    Aktie:
    933
    Auf Bestellung:
    2916
    Menge eingeben:
    Der aktuelle Preis von FQB44N10TM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,52 $
    1,52 $
    10
    1,29 $
    12,90 $
    100
    1,03 $
    103,00 $
    500
    0,91 $
    454,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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