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IRF3709PBF

IRF3709PBF
Mfr. #:
IRF3709PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF3709PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3709PBF DatasheetIRF3709PBF Datasheet (P4-P6)IRF3709PBF Datasheet (P7-P9)IRF3709PBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
90 A
Rds On - Drain-Source-Widerstand:
10.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
27 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
120 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Typ:
Smps-MOSFET
Breite:
4.4 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
53 S
Abfallzeit:
9.2 ns
Produktart:
MOSFET
Anstiegszeit:
171 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
21 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
SP001570060
Gewichtseinheit:
0.211644 oz
Tags
IRF3709, IRF370, IRF37, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 9 mOhm 41 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***et
Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB
***(Formerly Allied Electronics)
MOSFET, 30V, 90A, 9 MOHM, 27 NC QG, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 30V, 90A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction to Case Thermal Resistance A:1.04°C/W; On State resistance @ Vgs = 10V:9ohm; Package / Case:TO-220AB; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free
***ure Electronics
Single N-Channel 30 V 6 mOhm 23 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
***ure Electronics
Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
MOSFET, 30V, 100A, 7 MOHM, 40 NC QG, LOGIC LEVEL, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 180 W
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 30V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
***emi
N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***ter Electronics
30V,114A,5.3 OHM,N-CH,TO220,POWER TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ark
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
***ure Electronics
N-Channel 30 V 5.9 mOhm PowerTrench Mosfet - TO-220AB
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Teil # Mfg. Beschreibung Aktie Preis
IRF3709PBF
DISTI # 32628577		Infineon Technologies AGTrans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		3000
  • 1000:$0.5944
IRF3709PBF
DISTI # IRF3709PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 90A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		2247In Stock
  • 1000:$0.6891
  • 100:$1.0566
  • 25:$1.2864
  • 10:$1.3550
  • 1:$1.5200
IRF3709PBF
DISTI # V36:1790_13890136		Infineon Technologies AGTrans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		0
  • 3000000:$0.5096
  • 1500000:$0.5102
  • 300000:$0.5931
  • 30000:$0.7689
  • 3000:$0.8000
IRF3709PBF
DISTI # SP001570060		Infineon Technologies AGTrans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB (Alt: SP001570060)
RoHS: Compliant
Min Qty: 50		Europe - 1100
  • 500:€0.4579
  • 300:€0.4929
  • 200:€0.5349
  • 100:€0.5829
  • 50:€0.7129
IRF3709PBF
DISTI # IRF3709PBF		Infineon Technologies AGTrans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3709PBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 30000:$0.4439
  • 15000:$0.4519
  • 9000:$0.4679
  • 6000:$0.4859
  • 3000:$0.5039
IRF3709PBF
DISTI # IRF3709PBF		Infineon Technologies AGTrans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRF3709PBF)
RoHS: Compliant
Min Qty: 695
Container: Bulk		Americas - 0
  • 6950:$0.5589
  • 3475:$0.5689
  • 2085:$0.5889
  • 1390:$0.6109
  • 695:$0.6339
IRF3709PBF
DISTI # 63J7275		Infineon Technologies AGTrans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7275)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
    IRF3709PBF
    DISTI # 38K2786    		Infineon Technologies AGMOSFET Transistor, N Channel, 90 A, 30 V, 9 mohm, 10 V, 3 V RoHS Compliant: Yes14
    • 10000:$0.6240
    • 2500:$0.6470
    • 1000:$0.7300
    • 500:$0.9240
    • 100:$1.0500
    • 10:$1.3600
    • 1:$1.6000
    IRF3709PBF
    DISTI # 70018204    		Infineon Technologies AGMOSFET,30V,90A,9 MOHM,27 NC QG,TO-220AB
    RoHS: Compliant    		0
    • 3000:$2.4200
    • 6000:$2.3720
    • 15000:$2.2990
    • 30000:$2.2020
    • 75000:$2.0570
    IRF3709PBF
    DISTI # 942-IRF3709PBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
    RoHS: Compliant    		3197
    • 1:$1.4400
    • 10:$1.2300
    • 100:$0.9410
    • 500:$0.8320
    • 1000:$0.6570
    • 2000:$0.5820
    • 10000:$0.5610
    IRF3709PBFInfineon Technologies AGPower Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		1500
    • 1000:$0.5800
    • 500:$0.6100
    • 100:$0.6300
    • 25:$0.6600
    • 1:$0.7100
    IRF3709PBF
    DISTI # IRF3709PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,90A,120W,TO220AB39
    • 100:$0.7000
    • 10:$0.7700
    • 3:$0.9400
    • 1:$1.0300
    IRF3709PBF
    DISTI # 8657610    		Infineon Technologies AGMOSFET, N, 30V, 90A, TO-220
    RoHS: Compliant    		14
    • 10:$1.8500
    • 1:$2.1700
    IRF3709PBF
    DISTI # 8657610    		Infineon Technologies AGMOSFET, N, 30V, 90A, TO-22036
    • 500:£0.7300
    • 250:£0.7310
    • 100:£0.7320
    • 10:£1.0100
    • 1:£1.2700
    IRF3709PBF
    DISTI # XSKDRABV0021344    		Infineon Technologies AGPowerField-EffectTransistor,75AI(D),75V,0.013ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET
    RoHS: Compliant    		900 in Stock0 on Order
    • 900:$0.7386
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    OMO.#: OMO-STM32F446MEY6TR

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    OMO.#: OMO-CRCW06034K70FKEAC

    		 Thick Film Resistors - SMD 1/10Watt 4.7Kohms 1% Commercial Use
    CRCW0603150RFKEAC

    Mfr.#: CRCW0603150RFKEAC

    OMO.#: OMO-CRCW0603150RFKEAC

    		 Thick Film Resistors - SMD 1/10Watt 150ohms 1% Commercial Use
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    Mfr.#: SMAJ22A

    OMO.#: OMO-SMAJ22A-LITTELFUSE

    		 TVS Diodes - Transient Voltage Suppressors 22Vr 400W 11.3A 5% UniDirectional
    STM32F446MEY6TR

    Mfr.#: STM32F446MEY6TR

    OMO.#: OMO-STM32F446MEY6TR-STMICROELECTRONICS

    		 IC MCU 32BIT 512KB FLASH 81WLCSP STM32F4
    RB085BM-90FHTL

    Mfr.#: RB085BM-90FHTL

    OMO.#: OMO-RB085BM-90FHTL-ROHM-SEMI

    		 SCHOTTKY BARRIER DIODE
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von IRF3709PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,44 $
    1,44 $
    10
    1,23 $
    12,30 $
    100
    0,94 $
    94,10 $
    500
    0,83 $
    416,00 $
    1000
    0,66 $
    657,00 $
    2000
    0,58 $
    1 164,00 $
    10000
    0,56 $
    5 610,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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