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IRFS7762TRLPBF

IRFS7762TRLPBF
Mfr. #:
IRFS7762TRLPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 75V Single N-Channel HEXFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFS7762TRLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFS7762TRLPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
85 A
Rds On - Drain-Source-Widerstand:
6.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.7 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
85 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
140 W
Aufbau:
Single
Handelsname:
StarkIRFET
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
180 S
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
49 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
57 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
SP001557548
Gewichtseinheit:
0.139332 oz
Tags
IRFS77, IRFS7, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 75 V 6.7 mOhm 85 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ark
TAPE AND REEL / MOSFET, 75V, 104A, 6.3 Ohm, 88 nC, D2PAK
***ical
Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N-CH, 75V, 85A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; P
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***nell
MOSFET, N-CH, 75V, 85A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
***ical
Trans MOSFET N-CH 75V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
75V, N-Ch, 6.5 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS
***ure Electronics
N-Channel 75 V 100 A 6.5 mOhm 246 nC OptiMOS™ Power Mosfet - PG-TO263-3-2
*** Stop Electro
Power Field-Effect Transistor, 100A I(D), 75V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Summary of Features: N-channel Logic Level - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 75V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***ure Electronics
SQM110N05-06L Series 55 V 110 A Automotive N-Channel Mosfet - TO-263-3
***ical
Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) TO-263
***ment14 APAC
MOSFET,N CH,W DIODE,55V,110A,TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:157W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - D2PAK
*** Electronic Components
Darlington Transistors MOSFET MOSFET N CH 60V 110A D2PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
***inecomponents.com
PWR MOS ULTRAFET 55V/75A/0.008 OHM N-CHANNEL TO-263AB T&R
***ponent Stockers USA
75 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***et
TRANS MOSFET N-CH 55V 75A 3PIN TO-263AB
*** Services
CoC and 2-years warranty / RFQ for pricing
***inecomponents.com
60V, 75A, 0.0075 ohm, NCH LOGIC LEVEL ULTRAFET POWER MOSFET
***et
PWR MOS ULTRAFET 60V/75A/0.0085OHMS N-CH LL TO-263AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263 ;RoHS Compliant: Yes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRFS7762TRLPBF
DISTI # V72:2272_13890899		Infineon Technologies AGTrans MOSFET N-CH 75V 85A 3-Pin(2+Tab) TO-263AB T/R
RoHS: Compliant		733
  • 500:$0.9798
  • 250:$1.0693
  • 100:$1.1071
  • 25:$1.2911
  • 10:$1.3393
  • 1:$1.5228
IRFS7762TRLPBF
DISTI # IRFS7762TRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 75V 104A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		760In Stock
  • 100:$1.6761
  • 10:$2.0860
  • 1:$2.3100
IRFS7762TRLPBF
DISTI # IRFS7762TRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 75V 104A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    IRFS7762TRLPBF
    DISTI # IRFS7762TRLPBFTR-ND    		Infineon Technologies AGMOSFET N-CH 75V 104A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 800:$1.1427
    IRFS7762TRLPBF
    DISTI # 31022468    		Infineon Technologies AGTrans MOSFET N-CH 75V 85A 3-Pin(2+Tab) TO-263AB T/R
    RoHS: Compliant    		800
    • 800:$1.1136
    IRFS7762TRLPBF
    DISTI # 26196336    		Infineon Technologies AGTrans MOSFET N-CH 75V 85A 3-Pin(2+Tab) TO-263AB T/R
    RoHS: Compliant    		733
    • 500:$0.9798
    • 250:$1.0693
    • 100:$1.1071
    • 25:$1.2911
    • 10:$1.3393
    IRFS7762TRLPBF
    DISTI # IRFS7762TRLPBF    		Infineon Technologies AGTrans MOSFET N-CH 75V 85A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRFS7762TRLPBF)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel    		Americas - 0
    • 800:$0.7569
    • 1600:$0.7299
    • 3200:$0.7039
    • 4800:$0.6799
    • 8000:$0.6679
    IRFS7762TRLPBF
    DISTI # 34AC1762    		Infineon Technologies AGMOSFET, N-CH, 75V, 85A, TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:85A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,Power RoHS Compliant: Yes745
    • 1:$1.9400
    • 10:$1.6500
    • 25:$1.5400
    • 50:$1.4300
    • 100:$1.3200
    • 250:$1.2400
    • 500:$1.1600
    IRFS7762TRLPBF
    DISTI # 70425757    		Infineon Technologies AGMOSFET,75V,104A,6.3 Ohm,88 nC,D2PAK
    RoHS: Compliant    		0
    • 800:$1.7900
    IRFS7762TRLPBF
    DISTI # 942-IRFS7762TRLPBF    		Infineon Technologies AGMOSFET 75V Single N-Channel HEXFET
    RoHS: Compliant    		591
    • 1:$1.9400
    • 10:$1.6500
    • 100:$1.3200
    • 500:$1.1600
    IRFS7762TRLPBFInternational Rectifier 
    RoHS: Not Compliant    		800
    • 1000:$0.8700
    • 500:$0.9100
    • 100:$0.9500
    • 25:$0.9900
    • 1:$1.0700
    IRFS7762TRLPBF
    DISTI # 1301009P    		Infineon Technologies AGMOSFET STRONGIRFET N-CH 75V 85A D2PAK, RL795
    • 50:£0.5460
    IRFS7762TRLPBF
    DISTI # C1S322000592634    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		733
    • 250:$1.1312
    • 100:$1.1345
    • 25:$1.2078
    • 10:$1.3420
    IRFS7762TRLPBF
    DISTI # C1S322000591097    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		800
    • 800:$1.1600
    IRFS7762TRLPBF
    DISTI # 2781144    		Infineon Technologies AGMOSFET, N-CH, 75V, 85A, TO-263AB
    RoHS: Compliant    		745
    • 5:$3.2600
    • 25:$2.8400
    • 100:$2.3200
    • 250:$1.9600
    • 500:$1.6900
    • 1000:$1.6000
    • 5000:$1.5200
    IRFS7762TRLPBF
    DISTI # 2781144    		Infineon Technologies AGMOSFET, N-CH, 75V, 85A, TO-263AB
    RoHS: Compliant    		765
    • 5:£1.0900
    • 25:£0.9070
    • 100:£0.8130
    • 250:£0.7510
    • 500:£0.7010
    Bild Teil # Beschreibung
    IRFS7762TRLPBF

    Mfr.#: IRFS7762TRLPBF

    OMO.#: OMO-IRFS7762TRLPBF

    		 MOSFET 75V Single N-Channel HEXFET
    IRFS7762PBF

    Mfr.#: IRFS7762PBF

    OMO.#: OMO-IRFS7762PBF

    		 MOSFET 75V Single N-Channel HEXFET
    IRFS7762TRLPBF

    Mfr.#: IRFS7762TRLPBF

    OMO.#: OMO-IRFS7762TRLPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 75V 104A D2PAK
    IRFS7762PBF

    Mfr.#: IRFS7762PBF

    OMO.#: OMO-IRFS7762PBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 75V 104A D2PAK
    Verfügbarkeit
    Aktie:
    591
    Auf Bestellung:
    2574
    Menge eingeben:
    Der aktuelle Preis von IRFS7762TRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,93 $
    1,93 $
    10
    1,64 $
    16,40 $
    100
    1,31 $
    131,00 $
    500
    1,15 $
    575,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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