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NID5003NT4G

NID5003NT4G
Mfr. #:
NID5003NT4G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET 42V 20A N-Channel
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NID5003NT4G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
42 V
Id - Kontinuierlicher Drainstrom:
20 A
Rds On - Drain-Source-Widerstand:
42 mOhms
Vgs - Gate-Source-Spannung:
14 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.3 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.38 mm
Länge:
6.73 mm
Serie:
NID5003N
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
ON Semiconductor
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.139332 oz
Tags
NID5003N, NID5003, NID5, NID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Self-Protected FET with Temperature and Current Limit, 42 V Clamp, 20 A, Single N-Channel
***ure Electronics
N-Channel 42 V 42 mOhm 1.3 W Surface Mount Self-Protected FET - TO-252-3
***p One Stop Global
Trans MOSFET N-CH 42V 20A 3-Pin(2+Tab) DPAK T/R
***ical
Self-Protected FET with Temperature and Current Limit
***i-Key
MOSFET PWR HD+ 20A 42V ESD DPAK
***ser
MOSFETs- Protected 42V 20A N-Channel
***ark
SMART MOSFET, N, 42V, 1.3W, D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:42V; Current, Id Cont:20A; Resistance, Rds On:0.042ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case ;RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SMART MOSFET, N, 42V, 1.3W, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:42V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:2.3W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Avalanche Single Pulse Energy Eas:400mJ; Current Id Max:20A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pin Configuration:1(G),2(D),3(S); Shutdown Temperature:175°C; Termination Type:Surface Mount Device; Voltage Vds Typ:42V; Voltage Vgs Max:14VDC; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.2V; Voltage Vgs th Min:1V
***nell
SMART MOSFET, N, 42V, 1.3W, D-PAK; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:20A; Napięcie drenu / źródła Vds:42V; Rezystancja przewodzenia Rds(on):0.042ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:1.7V; Straty mocy Pd:2.3W; Rodzaj obudowy tranzystora:TO-252; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2018); Konfiguracja pinów:1(G),2(D),3(S); Lawinowa energia jednego impulsu Eas:400mJ; Maks. prąd Id:20A; Napięcie Vds, typ.:42V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs th, maks.:2.2V; Napięcie Vgs th, min.:1V; Napięcie Vgs, maks.:14VDC; Temperatura robocza, min.:-55°C; Temperatura wyłączania:175°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C
Teil # Mfg. Beschreibung Aktie Preis
NID5003NT4G
DISTI # NID5003NT4GOSTR-ND		ON SemiconductorMOSFET PWR HD+ 20A 42V ESD DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NID5003NT4G
    DISTI # NID5003NT4GOSCT-ND    		ON SemiconductorMOSFET PWR HD+ 20A 42V ESD DPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      NID5003NT4G
      DISTI # NID5003NT4GOSDKR-ND      		ON SemiconductorMOSFET PWR HD+ 20A 42V ESD DPAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        NID5003NT4G
        DISTI # 863-NID5003NT4G        		ON SemiconductorMOSFET 42V 20A N-Channel
        RoHS: Compliant        		0
          NID5003NT4
          DISTI # 863-NID5003NT4          		ON SemiconductorMOSFET 42V 20A N-Channel
          RoHS: Not compliant          		0
            NID5003NT4G
            DISTI # 1453665            		ON SemiconductorSMART MOSFET, N, 42V, 1.3W, D-PAK
            RoHS: Compliant            		0
            • 2500:$0.8770
            • 1000:$0.9570
            • 500:$1.3200
            • 100:$1.5000
            • 10:$1.8200
            • 1:$2.1900
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            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            3500
            Menge eingeben:
            Der aktuelle Preis von NID5003NT4G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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