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SGP10N60RUFDTU

SGP10N60RUFDTU
Mfr. #:
SGP10N60RUFDTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors Dis Short Circuit Rated IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SGP10N60RUFDTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2.2 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
16 A
Pd - Verlustleistung:
75 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
SGP10N60RUFD
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
16 A
Höhe:
9.4 mm
Länge:
10.1 mm
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Kontinuierlicher Kollektorstrom:
16 A
Gate-Emitter-Leckstrom:
+/- 100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
IGBTs
Teil # Aliase:
SGP10N60RUFDTU_NL
Gewichtseinheit:
0.063493 oz
Tags
SGP10N60RUFD, SGP10N60R, SGP10N, SGP10, SGP1, SGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***y
    M***y
    RU

    Ttl for 3.3 volt works, especks are sewn, you can take... delivery latvian-1 star, seller

    2019-04-07
    D***v
    D***v
    RU

    ok.

    2019-07-01
***ark
Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,16A I(C),to-220 Rohs Compliant: Yes
***et Europe
Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail
***r Electronics
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
***-Wing Technology
Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.8V @ 15V 10A 16A 55W 15ns/36ns
***Yang
IGBT 600V 16A 55W TO220F - Bulk
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers 600V/10A
*** Source Electronics
Trans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3+Tab) TO-220FP Tube / IGBT 600V 16A 55W TO220F
***ark
Transistor,igbt,n-Chan+Diode,600V V(Br)Ces,16A I(C),to-220Ab(Fp) Rohs Compliant: Yes
***rchild Semiconductor
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
***ical
Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Rail
***ark
RAIL / 600V,14A,UFS SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE
***r Electronics
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C at rated current. The IGBT is developmental type TA49190. The diode used in anti-parallel with the IGBT is the RHRD660 (TA49057).The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
***p One Stop Global
Trans IGBT Chip N-CH 600V 17A 45000mW 3-Pin(3+Tab) TO-220 Full-Pak Tube
***ure Electronics
N-Channel 600 V 17 A Flange Mount Ultrafast CoPack IGBT - TO-220FP
***trelec
IGBT Housing type: TO-220 Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.1 V Current release time: 180 ns Power dissipation: 45 W
***ment14 APAC
IGBT, 600V, 17A, TO-220FP; Transistor Type:IGBT; DC Collector Current:17A; Collector Emitter Voltage Vces:1.95V; Power Dissipation Pd:45W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:17A; Current Temperature:25°C; Fall Time Max:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Max:45W; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulsed Current Icm:92A; Rise Time:21ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, SINGLE, 600V, 16A, TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 32W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins
***ical
Trans IGBT Chip N-CH 600V 16A 32000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STGF19NC60HD Series 600 V 16 A Flange Mount Very Fast IGBT - TO-220FP
***r Electronics
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGF19NC60HD IGBT Single Transistor, 16 A, 2.5 V, 35 W, 600 V, TO-220FP, 3 Pins
***icroelectronics
19 A, 600 V, very fast IGBT with Ultrafast diode
***nell
IGBT, N 600V 9A TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 35W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins;
Teil # Mfg. Beschreibung Aktie Preis
SGP10N60RUFDTU
DISTI # V36:1790_06359360		ON SemiconductorDISCRETE, SHORT CIRCUIT RATED0
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTUFS-ND    		ON SemiconductorIGBT 600V 16A 75W TO220
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		955In Stock
    • 1000:$1.0696
    • 500:$1.2785
    • 100:$1.5432
    • 10:$1.9060
    • 1:$2.1100
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTU    		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail (Alt: SGP10N60RUFDTU)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€1.0029
    • 10:€0.9119
    • 25:€0.8359
    • 50:€0.8019
    • 100:€0.7709
    • 500:€0.7429
    • 1000:€0.7159
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTU    		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP10N60RUFDTU)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 1000:$1.5900
    • 2000:$1.5900
    • 4000:$1.4900
    • 6000:$1.4900
    • 10000:$1.4900
    SGP10N60RUFDTU
    DISTI # SGP10N60RUFDTU    		ON SemiconductorTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Rail - Bulk (Alt: SGP10N60RUFDTU)
    RoHS: Compliant
    Min Qty: 317
    Container: Bulk    		Americas - 0
    • 269:$1.0319
    • 271:$1.0249
    • 540:$1.0119
    • 1345:$0.9999
    • 2690:$0.9749
    SGP10N60RUFDTU
    DISTI # 83C0922    		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,16A I(C),TO-220 ROHS COMPLIANT: YES0
    • 5000:$0.8630
    • 2500:$0.8890
    • 1000:$1.1100
    • 500:$1.2300
    • 100:$1.3300
    • 10:$1.6600
    • 1:$1.9500
    SGP10N60RUFDTU
    DISTI # 512-SGP10N60RUFDTU    		ON SemiconductorIGBT Transistors Dis Short Circuit Rated IGBT
    RoHS: Compliant    		1006
    • 1:$1.9500
    • 10:$1.6500
    • 100:$1.3200
    • 500:$1.1600
    • 1000:$0.9620
    • 2000:$0.8960
    • 5000:$0.8630
    SGP10N60RUFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    RoHS: Compliant    		769
    • 1000:$1.0400
    • 500:$1.0900
    • 100:$1.1400
    • 25:$1.1900
    • 1:$1.2800
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    HCPL-3140-000E

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    OMO.#: OMO-B32924C3475M000

    		 Safety Capacitors 4.7uF 305V 20% 27.5mm L/S Class X2
    10114827-001LF

    Mfr.#: 10114827-001LF

    OMO.#: OMO-10114827-001LF

    		 Headers & Wire Housings Wire-to-Board,1.25mm Terminal,Tin plating
    HCPL-3140-000E

    Mfr.#: HCPL-3140-000E

    OMO.#: OMO-HCPL-3140-000E-BROADCOM

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    OMO.#: OMO-B32924C3475M000-EPCOS

    		 Film Capacitors 4.7uF 305V 20% 27.5mm L/S Class X2
    Verfügbarkeit
    Aktie:
    904
    Auf Bestellung:
    2887
    Menge eingeben:
    Der aktuelle Preis von SGP10N60RUFDTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,76 $
    1,76 $
    10
    1,50 $
    15,00 $
    100
    1,20 $
    120,00 $
    500
    1,05 $
    525,00 $
    1000
    0,87 $
    870,00 $
    2000
    0,81 $
    1 620,00 $
    5000
    0,78 $
    3 900,00 $
    10000
    0,75 $
    7 500,00 $
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