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IPS135N03L G

IPS135N03L G
Mfr. #:
IPS135N03L G
Hersteller:
infineon
Beschreibung:
IGBT Transistors MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPS135N03L G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
infineon
Produktkategorie
FETs - Einzeln
Serie
OptiMOS 3
Verpackung
Rohr
Teil-Aliasnamen
IPS135N03LGAKMA1 SP000788220
Gewichtseinheit
0.139332 oz
Montageart
Durchgangsloch
Handelsname
OptiMOS
Paket-Koffer
IPAK-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
31 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
2 ns
Anstiegszeit
3 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
30 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
13.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
12 ns
Typische-Einschaltverzögerungszeit
3 ns
Kanal-Modus
Erweiterung
Tags
IPS135N03LG, IPS135, IPS13, IPS1, IPS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251
***ponent Stockers USA
30 A 30 V 0.0135 ohm N-CHANNEL Si POWER MOSFET TO-251
***nell
MOSFET, N CH, 30A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0113ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 31W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 35A 1.92W 21.4ns
***ser
MOSFETs- Power and Small Signal NFET 30V 35A 15MOHM
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes
***emi
Power MOSFET 30V 35A 15 mOhm Single N-Channel DPAK
***Yang
Trans MOSFET N-CH 30V 8.5A 3-Pin(3+Tab) IPAK Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 6.9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:32.6W ;RoHS Compliant: Yes
***emi
Power MOSFET 25V 62A 10.5 mOhm Single N-Channel DPAK
***Yang
Trans MOSFET N-CH 25V 32A 3-Pin(3+Tab) IPAK Rail - Rail/Tube
***ser
MOSFETs- Power and Small Signal 25V 62A N-Channel
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:62A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):10.5mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:58W ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IPS135N03LGAKMA1
DISTI # IPS135N03LGAKMA1-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO251-3
RoHS: Compliant
Min Qty: 1500
Container: Tube		Limited Supply - Call
    IPS135N03L G
    DISTI # 726-IPS135N03LG    		Infineon Technologies AGMOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3
    RoHS: Compliant    		0
      IPS135N03LGInfineon Technologies AGPower Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
      RoHS: Compliant      		2861
      • 1000:$0.1800
      • 100:$0.1900
      • 500:$0.1900
      • 25:$0.2000
      • 1:$0.2200
      Bild Teil # Beschreibung
      IPS135N03L

      Mfr.#: IPS135N03L

      OMO.#: OMO-IPS135N03L-1190

      		 Neu und Original
      IPS135N03LG

      Mfr.#: IPS135N03LG

      OMO.#: OMO-IPS135N03LG-1190

      		 Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
      IPS135N03LGAKMA1

      Mfr.#: IPS135N03LGAKMA1

      OMO.#: OMO-IPS135N03LGAKMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 30A TO251-3
      IPS135N03L G

      Mfr.#: IPS135N03L G

      OMO.#: OMO-IPS135N03L-G-126

      		 IGBT Transistors MOSFET N-Ch 30V 30A IPAK-3 OptiMOS 3
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von IPS135N03L G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,23 $
      0,23 $
      10
      0,22 $
      2,16 $
      100
      0,21 $
      20,51 $
      500
      0,19 $
      96,85 $
      1000
      0,18 $
      182,30 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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