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IRFZ34EPBF

IRFZ34EPBF
Mfr. #:
IRFZ34EPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 60V 1 N-CH HEXFET 7mOhms 30nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFZ34EPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
28 A
Rds On - Drain-Source-Widerstand:
42 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
20 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
68 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET Leistungs-MOSFET
Breite:
4.4 mm
Marke:
Infineon / IR
Abfallzeit:
30 ns
Produktart:
MOSFET
Anstiegszeit:
30 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22 ns
Typische Einschaltverzögerungszeit:
5.1 ns
Teil # Aliase:
SP001567916
Gewichtseinheit:
0.211644 oz
Tags
IRFZ34, IRFZ3, IRFZ, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.042Ohm;ID 28A;TO-220AB;PD 68W;VGS +/-20V
***ernational Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***ical
Trans MOSFET N-CH 60V 28A 3-Pin (3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 28A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):42mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 60V, 28A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:60V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:68W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:28A; Current Temperature:25°C; Device Marking:IRFZ34EPBF; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:68W; Power Dissipation Pd:68W; Pulse Current Idm:112A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFZ34EPBF
DISTI # IRFZ34EPBF-ND		Infineon Technologies AGMOSFET N-CH 60V 28A TO-220AB
RoHS: Compliant
Min Qty: 3000
Container: Tube		Limited Supply - Call
    IRFZ34EPBF
    DISTI # 70017050    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 0.042Ohm,ID 28A,TO-220AB,PD 68W,VGS +/-20V
    RoHS: Compliant    		0
    • 1:$1.6000
    • 2:$1.5680
    • 5:$1.5200
    • 10:$1.4560
    • 25:$1.3600
    IRFZ34EPBFInternational Rectifier 
    RoHS: Compliant    		450
      IRFZ34EPBF
      DISTI # 8650187      		Infineon Technologies AGMOSFET, N, 60V, 28A, TO-220
      RoHS: Compliant      		0
      • 1000:$1.3100
      • 500:$1.3600
      • 250:$1.4300
      • 100:$1.5100
      • 10:$1.9600
      • 1:$2.7900
      Bild Teil # Beschreibung
      IRFZ34PBF

      Mfr.#: IRFZ34PBF

      OMO.#: OMO-IRFZ34PBF

      		 MOSFET N-CH 60V HEXFET MOSFET
      IRFZ34NLPBF

      Mfr.#: IRFZ34NLPBF

      OMO.#: OMO-IRFZ34NLPBF

      		 MOSFET MOSFT 55V 29A 40mOhm 22.7nC
      IRFZ34S

      Mfr.#: IRFZ34S

      OMO.#: OMO-IRFZ34S

      		 MOSFET N-Chan 60V 30 Amp
      IRFZ34NSTRR

      Mfr.#: IRFZ34NSTRR

      OMO.#: OMO-IRFZ34NSTRR-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 55V 29A D2PAK
      IRFZ34L

      Mfr.#: IRFZ34L

      OMO.#: OMO-IRFZ34L-VISHAY

      		 MOSFET N-CH 60V 30A TO-262
      IRFZ34STRRPBF

      Mfr.#: IRFZ34STRRPBF

      OMO.#: OMO-IRFZ34STRRPBF-1190

      		 Neu und Original
      IRFZ34NSTRLPBF

      Mfr.#: IRFZ34NSTRLPBF

      OMO.#: OMO-IRFZ34NSTRLPBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 55V 29A D2PAK
      IRFZ3007S

      Mfr.#: IRFZ3007S

      OMO.#: OMO-IRFZ3007S-1190

      		 Neu und Original
      IRFZ34NPBF-CN

      Mfr.#: IRFZ34NPBF-CN

      OMO.#: OMO-IRFZ34NPBF-CN-1190

      		 Neu und Original
      IRFZ34NS,FZ34NS

      Mfr.#: IRFZ34NS,FZ34NS

      OMO.#: OMO-IRFZ34NS-FZ34NS-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von IRFZ34EPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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