MUN2211T3G

Mfr. #:: MUN2211T3G
Hersteller:: ON Semiconductor
Beschreibung:: Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MUN2211T3G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: MUN2211T3G Datasheet MUN2211T3G Datasheet (P4-P6)MUN2211T3G Datasheet (P7-P9)MUN2211T3G Datasheet (P10-P12)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: Bipolartransistoren – vorgespannt

RoHS:: Y

Aufbau:: Single

Polarität des Transistors:: NPN

Typischer Eingangswiderstand:: 10 kOhms

Typisches Widerstandsverhältnis:: 1

Montageart:: SMD/SMT

Paket / Koffer:: SC-59-3

DC-Kollektor/Basisverstärkung hfe Min:: 35

Kollektor- Emitterspannung VCEO Max:: 50 V

Kontinuierlicher Kollektorstrom:: 0.1 A

Spitzen-DC-Kollektorstrom:: 100 mA

Pd - Verlustleistung:: 230 mW

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Serie:: MUN2211

Verpackung:: Spule

DC-Stromverstärkung hFE Max:: 35

Höhe:: 1.09 mm

Länge:: 2.9 mm

Breite:: 1.5 mm

Marke:: ON Semiconductor

Produktart:: BJTs – Bipolartransistoren – Vorgespannt

Werkspackungsmenge:: 10000

Unterkategorie:: Transistoren

Gewichtseinheit:: 0.000282 oz

Tags: MUN2211T, MUN2211, MUN221, MUN22, MUN2, MUN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MUN2211T3G Beschreibung

***ure Electronics: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 230mW Surface Mou

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***Yang: Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R - Tape and Reel

***emi: NPN Bipolar Digital Transistor (BRT)

***ark: Brt Transistor, 50V, 10K/10Kohm, Sc-59, Full Reel; Transistor Polarity:single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:- Rohs Compliant: Yes

***(Formerly Allied Electronics): MUN2211T1G NPN Digital Transistor; 100 mA 50 V 10 kOhms; Ratio Of 1; 3-Pin SC-59

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: MUN Series 50 V 100 mA 10 kOhm NPN Silicon Bias Resistor Transistor - SC-59

***p One Stop Global: Trans Digital BJT NPN 50V 100mA 338mW Automotive 3-Pin SC-59 T/R

***emi: NPN Bipolar Digital Transistor (BRT)

***nell: TRANS, 50V, 10K/10KOHM, SC-59; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SC-59; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins

***th Star Micro: This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***el Electronic: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO

***Yang: Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R - Tape and Reel

***ure Electronics: MUN Series 50 V 100 mA 47 kOhm NPN Silicon Bias Resistor Transistor - SC-59

***emi: NPN Bipolar Digital Transistor (BRT)

***nell: TRANS, 50V, 47/47KOHM, SC-59-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 47kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SC-59; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 3Pins

***th Star Micro: This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***p One Stop: Trans Digital BJT NPN 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R

***ure Electronics: DTC Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SC-75

***emi: NPN Bipolar Digital Transistor (BRT)

***enic: NPN - Pre-Biased 200mW 100mA 50V SC-75(SOT-523) Digital Transistors ROHS

***nell: BRT TRANSISTOR, AEC-Q101, 50V, 4.7K/47K; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.1(Ratio); RF Transistor Case: SOT-416; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***th Star Micro: NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: DTC114EUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70

***ical: Trans Digital BJT NPN 50V 100mA 200mW 3-Pin UMT T/R

***ark: Transistor, Digital; Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:10Kohm; Resistor Ratio, R1 / R2:-; Rfrohs Compliant: Yes

***nell: TRANSISTOR, DIGITAL; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTC114E Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 30; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ure Electronics: DTC143EUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70

***ical: Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R

***ment14 APAC: Transistor; DIGITAL;UMT;NPN; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:100mA;

***ark: TRANSISTOR; DIGITAL;UMT;NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:200mW; Min Hfe:30; ft, Typ:250MHz; Case ;RoHS Compliant: Yes

***nell: TRANSISTOR; DIGITAL;UMT;NPN; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 4.7kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTC143E Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 30; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-323; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ical: Trans Digital BJT NPN 50V 100mA 200mW 3-Pin UMT T/R

***ure Electronics: DTC123YUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70

***nell: TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2:

***ark: TRANSISTOR;DIGITAL;UMT;NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:200mW; Min Hfe:33; ft, Typ:250MHz; Case ;RoHS Compliant: Yes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MUN2211T3G DISTI # V72:2272_07318031	ON Semiconductor	Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-59 T/R RoHS: Compliant	3990	3000:$0.0228 1000:$0.0286 500:$0.0354 250:$0.0393 100:$0.0437 25:$0.1129 10:$0.1254 1:$0.1424
MUN2211T3G DISTI # MUN2211T3GOSCT-ND	ON Semiconductor	TRANS PREBIAS NPN 230MW SC59 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	27903In Stock	1000:$0.0331 500:$0.0486 100:$0.0789 10:$0.1450 1:$0.1600
MUN2211T3G DISTI # MUN2211T3GOSDKR-ND	ON Semiconductor	TRANS PREBIAS NPN 230MW SC59 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	27903In Stock	1000:$0.0331 500:$0.0486 100:$0.0789 10:$0.1450 1:$0.1600
MUN2211T3G DISTI # MUN2211T3GOSTR-ND	ON Semiconductor	TRANS PREBIAS NPN 230MW SC59 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	20000In Stock	250000:$0.0143 100000:$0.0161 50000:$0.0171 30000:$0.0193 10000:$0.0214
SMUN2211T3G DISTI # SMUN2211T3G-ND	ON Semiconductor	TRANS PREBIAS NPN 230MW SC59 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.0505
MUN2211T3G DISTI # 25775610	ON Semiconductor	Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-59 T/R RoHS: Compliant	3990	6000:$0.0205 3000:$0.0228 1000:$0.0286 550:$0.0354
MUN2211T3G DISTI # MUN2211T3G	ON Semiconductor	Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R (Alt: MUN2211T3G) RoHS: Compliant Min Qty: 40000 Container: Tape and Reel	Asia - 100000	10000:$0.0189 20000:$0.0182 30000:$0.0175 50000:$0.0169 100000:$0.0163 250000:$0.0158 500000:$0.0155
MUN2211T3G DISTI # MUN2211T3G	ON Semiconductor	Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R - Tape and Reel (Alt: MUN2211T3G) RoHS: Compliant Min Qty: 40000 Container: Reel	Americas - 0	40000:$0.0122 60000:$0.0121 100000:$0.0120 200000:$0.0118 400000:$0.0115
SMUN2211T3G DISTI # SMUN2211T3G	ON Semiconductor	Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R - Tape and Reel (Alt: SMUN2211T3G) RoHS: Compliant Min Qty: 20000 Container: Reel	Americas - 0	20000:$0.0370 40000:$0.0367 60000:$0.0363 100000:$0.0358 200000:$0.0349
MUN2211T3G DISTI # 26K4670	ON Semiconductor	BRT TRANSISTOR, 50V, 10K/10KOHM, SC-59, FULL REEL,Digital Transistor Polarity:Single NPN,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:10kohm , RoHS Compliant: Yes	0	1:$0.1610 50:$0.1340 100:$0.0490 250:$0.0470 500:$0.0460 1000:$0.0230 20000:$0.0210 40000:$0.0190
MUN2211T3G DISTI # 70340477	ON Semiconductor	MUN2211T3G NPN Digital Transistor,100 mA 50 V 10 kOhms,Ratio Of 1,3-Pin SC-59 RoHS: Compliant	0	200:$0.0400 6250:$0.0400 12500:$0.0390 25000:$0.0390
MUN2211T3G	ON Semiconductor	RoHS: Not Compliant	220000	25:$0.0300 100:$0.0300 500:$0.0300 1000:$0.0300 1:$0.0400
SMUN2211T3G	ON Semiconductor	RoHS: Not Compliant	70000	1000:$0.0400 1:$0.0500 25:$0.0500 100:$0.0500 500:$0.0500
MUN2211T1G DISTI # 863-MUN2211T1G	ON Semiconductor	Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN RoHS: Compliant	60610	1:$0.1600 10:$0.1370 100:$0.0490 1000:$0.0320 3000:$0.0250 9000:$0.0220 24000:$0.0200 45000:$0.0170 99000:$0.0150
MUN2211T3G DISTI # 863-MUN2211T3G	ON Semiconductor	Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN RoHS: Compliant	28828	1:$0.1500 10:$0.1320 100:$0.0470 1000:$0.0310 2500:$0.0240 10000:$0.0210 20000:$0.0190 50000:$0.0170 100000:$0.0140
SMUN2211T1G DISTI # 863-SMUN2211T1G	ON Semiconductor	Bipolar Transistors - Pre-Biased SS SC59 BR XSTR NPN SPCL RoHS: Compliant	3575	1:$0.3800 10:$0.2550 100:$0.1070 1000:$0.0730 3000:$0.0570 9000:$0.0490 24000:$0.0460 45000:$0.0430 99000:$0.0370
SMUN2211T3G DISTI # 863-SMUN2211T3G	ON Semiconductor	Bipolar Transistors - Pre-Biased SS SC59 BR XSTR NPN SPCL RoHS: Compliant	0	1:$0.3800 10:$0.2550 100:$0.1070 1000:$0.0730 2500:$0.0570 10000:$0.0490 20000:$0.0460 50000:$0.0430 100000:$0.0370
MUN2211T3G DISTI # 6900164P	ON Semiconductor	TRANSISTOR DIGITAL NPN 50V 100MA SC-59, RL	2950	125:£0.0870 500:£0.0760 1250:£0.0660
MUN2211T3G DISTI # C1S541900455782	ON Semiconductor	Trans Digital BJT NPN 50V 100mA 338mW Automotive 3-Pin SC-59 T/R RoHS: Compliant	3990	250:$0.0393 100:$0.0437

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Verfügbarkeit

Aktie:: 26
Auf Bestellung:: 2009
Menge eingeben:

Der aktuelle Preis von MUN2211T3G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,15 $~~; ~~0,15 $~~

10: ~~0,13 $~~; ~~1,28 $~~

100: ~~0,05 $~~; ~~4,60 $~~

1000: ~~0,03 $~~; ~~30,00 $~~

2500: ~~0,02 $~~; ~~57,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

MUN2211T 11
MUN2211 15
MUN221 51
MUN22 90
MUN2 163
MUN 456

MUN2211T3G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes