IFS200V12PT4

IFS200V12PT4
Mfr. #:
IFS200V12PT4
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules MIPAQ SERVE 1200V 200A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IFS200V12PT4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IFS200V12PT4 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Module
RoHS:
Y
Produkt:
IGBT Silizium Module
Aufbau:
IGBT-Wechselrichter
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.1 V
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 65 C
Verpackung:
Tablett
Marke:
Infineon-Technologien
Montageart:
SMD/SMT
Produktart:
IGBT-Module
Werkspackungsmenge:
6
Unterkategorie:
IGBTs
Teil # Aliase:
IFS200V12PT4BOSA1 SP000525356
Gewichtseinheit:
1 lb
Tags
IFS200, IFS2, IFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 6.0pF 25volts C0G +/-0.5pF
***ineon SCT
The 1200V MIPAQ™ serve using IGBT4 technology in sixpack configuration plus a full set of drivers and temperature measurement on top of the IGBT module, AG-MIPAQ-3, RoHS
***ineon
The 1200V MIPAQ serve using IGBT4 technology in sixpack configuration plus a full set of drivers and temperature measurement on top of the IGBT module. Inside the module, there is a galvanically isolated driver based on Infineons Coreless Transformer Technology. | Summary of Features: Up to 200 A nominal current; Designed for robustness: Ultrasonic welding technology, Injection molded DC-bus-bar, control pins and power terminals; Highly sophisticated CLT leads to improved system reliability due to elimination of optoelectronics; Increasing both output power and efficiency due to optimized dead time; Industrial standard connectors; Plug & play solution for high current drives; 150 C operation junction temperature; RoHS compliant | Benefits: EconoPACK 4 package plus driver on top saves board space in the application; True baseplate temperature measurement providing digital information to the user galvanically separated | Target Applications: drives; wind; solar; ups
MIPAQ™ Intelligent Power Modules
Infineon MIPAQ™ Intelligent Power Modules integrate electronics into power modules and is a functional product category within the Insulated Gate Bipolar Transistor (IGBT) modules portfolio. These power modules combine IGBT modules, integrated sensing and driving electronics. The MIPAQ™ power modules offer powerful and compact inverters for low and medium power. The power modules are cost-effective and contribute to energy saving.
Teil # Mfg. Beschreibung Aktie Preis
IFS200V12PT4BOSA1
DISTI # IFS200V12PT4BOSA1-ND
Infineon Technologies AGMODULE IPM MIPAQ-3
RoHS: Compliant
Min Qty: 6
Container: Tray
Limited Supply - Call
  • 6:$507.6117
IFS200V12PT4BOSA1
DISTI # IFS200V12PT4BOSA1
Infineon Technologies AGIPM - Trays (Alt: IFS200V12PT4BOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray
Americas - 0
  • 6:$522.3900
  • 12:$503.4900
  • 24:$485.2900
  • 36:$468.9900
  • 60:$460.6900
IFS200V12PT4
DISTI # 641-IFS200V12PT4
Infineon Technologies AGIGBT Modules MIPAQ SERVE 1200V 200A
RoHS: Compliant
4
  • 1:$489.5100
  • 5:$460.0100
Bild Teil # Beschreibung
MJD44H11G

Mfr.#: MJD44H11G

OMO.#: OMO-MJD44H11G

Bipolar Transistors - BJT 8A 80V 20W NPN
MJD45H11G

Mfr.#: MJD45H11G

OMO.#: OMO-MJD45H11G

Bipolar Transistors - BJT 8A 80V 20W PNP
ES1D

Mfr.#: ES1D

OMO.#: OMO-ES1D

Rectifiers 1.0a Rectifier UF Recovery
79109-1010

Mfr.#: 79109-1010

OMO.#: OMO-79109-1010

Headers & Wire Housings 2MM RECEPT. 22 CKT Vert. Selective Gold
87832-2220

Mfr.#: 87832-2220

OMO.#: OMO-87832-2220

Headers & Wire Housings 2MM HDR. 22 CKT. Vert. SMT
43025-2200

Mfr.#: 43025-2200

OMO.#: OMO-43025-2200-410

Headers & Wire Housings 22 CKT RECEPTACLE
87832-2220

Mfr.#: 87832-2220

OMO.#: OMO-87832-2220-MOLEX

Headers & Wire Housings 2MM HDR. 22 CKT. Vert. SMT
79109-1010

Mfr.#: 79109-1010

OMO.#: OMO-79109-1010-MOLEX

Headers & Wire Housings 2MM RECEPT. 22 CKT Vert. Selective Gold
ES1D

Mfr.#: ES1D

OMO.#: OMO-ES1D-ON-SEMICONDUCTOR

DIODE GEN PURP 200V 1A SMA
MJD45H11G

Mfr.#: MJD45H11G

OMO.#: OMO-MJD45H11G-ON-SEMICONDUCTOR

Bipolar Transistors - BJT 8A 80V 20W PNP
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von IFS200V12PT4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
6
460,01 $
2 760,06 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
Top