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SIHU2N80E-GE3

SIHU2N80E-GE3
Mfr. #:
SIHU2N80E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 800V Vds 30V Vgs IPAK (TO-251)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHU2N80E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHU2N80E-GE3 DatasheetSIHU2N80E-GE3 Datasheet (P4-P6)SIHU2N80E-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHU2N80E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
2.8 A
Rds On - Drain-Source-Widerstand:
2.38 Ohms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
9.8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
62.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
E
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Abfallzeit:
27 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19 ns
Typische Einschaltverzögerungszeit:
11 ns
Gewichtseinheit:
0.011993 oz
Tags
SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
E Series Power MOSFET N-Channel 800V VDS ±30V VGS 2.8A ID 3-Pin TO-251
***ment14 APAC
MOSFET, N-CH, 800V, 2.8A, TO-251
***nell
MOSFET, N-CH, 800V, 2.8A, TO-251; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.8A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 2.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 62.5W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHU2N80E-GE3
DISTI # SIHU2N80E-GE3-ND		Vishay SiliconixMOSFET N-CH 800V 2.8A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		3040In Stock
  • 6000:$0.6354
  • 3000:$0.6688
  • 500:$0.9077
  • 100:$1.0988
  • 25:$1.3376
  • 10:$1.4090
  • 1:$1.5800
SIHU2N80E-GE3
DISTI # SIHU2N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET N-Channel 800V VDS ±30V VGS 2.8A ID 3-Pin TO-251 - Tape and Reel (Alt: SIHU2N80E-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.5829
  • 18000:$0.5989
  • 12000:$0.6159
  • 6000:$0.6419
  • 3000:$0.6619
SIHU2N80E-GE3
DISTI # 59AC7416		Vishay IntertechnologiesN-CHANNEL 800V0
  • 2500:$0.6280
  • 1000:$0.6830
  • 500:$0.7920
  • 100:$0.9060
  • 50:$1.0300
  • 25:$1.1300
  • 10:$1.2400
  • 1:$1.6000
SIHU2N80E-GE3
DISTI # 78-SIHU2N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant		2982
  • 1:$1.6000
  • 10:$1.3200
  • 100:$1.0100
  • 500:$0.8650
  • 1000:$0.6830
SIHU2N80E-GE3
DISTI # 2772349		Vishay IntertechnologiesMOSFET, N-CH, 800V, 2.8A, TO-251
RoHS: Compliant		50
  • 6000:$0.9600
  • 3000:$1.0100
  • 500:$1.3700
  • 100:$1.6600
  • 25:$2.0200
  • 10:$2.1300
  • 1:$2.3800
SIHU2N80E-GE3
DISTI # 2772349		Vishay IntertechnologiesMOSFET, N-CH, 800V, 2.8A, TO-25150
  • 500:£0.6270
  • 250:£0.6800
  • 100:£0.7320
  • 10:£0.9500
  • 1:£1.1600
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von SIHU2N80E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,60 $
1,60 $
10
1,32 $
13,20 $
100
1,01 $
101,00 $
500
0,86 $
432,50 $
1000
0,68 $
683,00 $
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