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SISA01DN-T1-GE3

SISA01DN-T1-GE3
Mfr. #:
SISA01DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -30V Vds 16V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISA01DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISA01DN-T1-GE3 DatasheetSISA01DN-T1-GE3 Datasheet (P4-P6)SISA01DN-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SISA01DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
60 A
Rds On - Drain-Source-Widerstand:
4.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.2 V
Vgs - Gate-Source-Spannung:
16 V, - 20 V
Qg - Gate-Ladung:
56 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Marke:
Vishay / Siliconix
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
6 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
39 ns
Typische Einschaltverzögerungszeit:
15 ns
Tags
SISA0, SISA, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
TrenchFET Gen IV Power MOSFET P-Channel Single -30V VDS +16V -20V VGS -60A ID 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET P-CH 30V POWERPAK 1212-8
***ark
Mosfet, P-Ch, -30V, -60A, Powerpak 1212; Transistor Polarity:p Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0041Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, P-CH, -30V, -60A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; Power Dissipation Pd:52W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-P, -30V, -60A, POWERPAK 1212; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-60A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0041ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-2.2V; Dissipazione di Potenza Pd:52W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SISA01DN-T1-GE3
DISTI # SISA01DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V POWERPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2431In Stock
  • 1000:$0.4284
  • 500:$0.5355
  • 100:$0.7229
  • 10:$0.9370
  • 1:$1.0700
SISA01DN-T1-GE3
DISTI # SISA01DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V POWERPAK 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2431In Stock
  • 1000:$0.4284
  • 500:$0.5355
  • 100:$0.7229
  • 10:$0.9370
  • 1:$1.0700
SISA01DN-T1-GE3
DISTI # SISA01DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V POWERPAK 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.3769
SISA01DN-T1-GE3
DISTI # SISA01DN-T1-GE3		Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET P-Channel Single -30V VDS +16V -20V VGS -60A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA01DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3429
  • 6000:$0.3329
  • 12000:$0.3199
  • 18000:$0.3109
  • 30000:$0.3019
SISA01DN-T1-GE3
DISTI # 50AC9662		Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, POWERPAK 1212,Transistor Polarity:P Channel,Continuous Drain Current Id:-60A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0041ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.2V,RoHS Compliant: Yes5595
  • 1000:$0.3790
  • 500:$0.4730
  • 250:$0.5230
  • 100:$0.5720
  • 50:$0.6330
  • 25:$0.6930
  • 10:$0.7540
  • 1:$0.9400
SISA01DN-T1-GE3
DISTI # 78-SISA01DN-T1-GE3		Vishay IntertechnologiesMOSFET -30V Vds 16V Vgs PowerPAK 1212-8
RoHS: Compliant		3754
  • 1:$0.9400
  • 10:$0.7540
  • 100:$0.5720
  • 500:$0.4730
  • 1000:$0.3790
  • 3000:$0.3430
SISA01DN-T1-GE3
DISTI # 2846634		Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, POWERPAK 1212
RoHS: Compliant		5595
  • 5000:$0.5640
  • 1000:$0.5840
  • 500:$0.6170
  • 250:$0.7270
  • 100:$0.8840
  • 25:$1.1300
  • 5:$1.3600
SISA01DN-T1-GE3
DISTI # 2846634		Vishay IntertechnologiesMOSFET, P-CH, -30V, -60A, POWERPAK 1212
RoHS: Compliant		5625
  • 500:£0.3680
  • 250:£0.4070
  • 100:£0.4460
  • 25:£0.5900
  • 5:£0.6580
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Verfügbarkeit
Aktie:
32
Auf Bestellung:
2015
Menge eingeben:
Der aktuelle Preis von SISA01DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,93 $
0,93 $
10
0,75 $
7,53 $
100
0,57 $
57,10 $
500
0,47 $
236,00 $
1000
0,38 $
378,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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