FCH35N60

FCH35N60
Mfr. #:
FCH35N60
Hersteller:
ON Semiconductor
Beschreibung:
Darlington Transistors MOSFET 600V N-Channel SuperFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCH35N60 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
FSC
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.225401 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
312.5 W
Abfallzeit
73 ns
Anstiegszeit
120 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
35 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
5 V
Rds-On-Drain-Source-Widerstand
79 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
105 ns
Typische-Einschaltverzögerungszeit
34 ns
Qg-Gate-Ladung
139 nC
Vorwärts-Transkonduktanz-Min
28.8 S
Tags
FCH3, FCH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
***p One Stop Global
Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-247 Rail
***Components
MOSFET SuperFET kanał N 600V 35A TO-247
***i-Key
MOSFET N-CH 600V 35A TO-247
***ark
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; No. of Pins:3 ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:105A
***ment14 APAC
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:105A
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Teil # Mfg. Beschreibung Aktie Preis
FCH35N60
DISTI # FCH35N60-ND
ON SemiconductorMOSFET N-CH 600V 35A TO-247
RoHS: Compliant
Min Qty: 450
Container: Tube
Temporarily Out of Stock
  • 450:$5.1425
FCH35N60
DISTI # FCH35N60
ON SemiconductorTrans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FCH35N60)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$3.4900
  • 900:$3.4900
  • 1800:$3.4900
  • 2700:$3.3900
  • 4500:$3.2900
FCH35N60
DISTI # 92R5508
ON SemiconductorSF1 600V 98MOHM E TO247 / TUBE0
  • 1:$5.7800
  • 10:$4.9600
  • 100:$4.6300
  • 500:$4.2700
  • 1000:$4.0000
FCH35N60Fairchild Semiconductor CorporationPower Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
RoHS: Compliant
36685
  • 1000:$5.9200
  • 500:$6.2300
  • 100:$6.4900
  • 25:$6.7700
  • 1:$7.2900
FCH35N60
DISTI # 512-FCH35N60
ON SemiconductorMOSFET 600V N-Channel SuperFET
RoHS: Compliant
356
  • 1:$6.5500
  • 10:$5.9200
  • 25:$5.6400
  • 100:$4.9000
  • 250:$4.6800
FCH35N60
DISTI # 2083215
ON SemiconductorMOSFET, N CH, 600V, 35A, TO-247
RoHS: Compliant
180
  • 1:$10.3700
  • 10:$9.3700
  • 25:$8.9300
  • 100:$7.7500
  • 250:$7.4100
FCH35N60
DISTI # 2083215
ON SemiconductorMOSFET, N CH, 600V, 35A, TO-247
RoHS: Compliant
181
  • 1:£5.4600
  • 5:£4.9600
  • 10:£4.2700
  • 50:£4.2600
  • 100:£4.2500
Bild Teil # Beschreibung
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Mfr.#: FCH3216-R47M

OMO.#: OMO-FCH3216-R47M-1190

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FCH3216F-1R0K

Mfr.#: FCH3216F-1R0K

OMO.#: OMO-FCH3216F-1R0K-1190

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Mfr.#: FCH3216F-R47M

OMO.#: OMO-FCH3216F-R47M-1190

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FCH35N60.

Mfr.#: FCH35N60.

OMO.#: OMO-FCH35N60--1190

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FCH36N60NF

Mfr.#: FCH36N60NF

OMO.#: OMO-FCH36N60NF-1190

Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3000
Menge eingeben:
Der aktuelle Preis von FCH35N60 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,94 $
4,94 $
10
4,69 $
46,88 $
100
4,44 $
444,15 $
500
4,19 $
2 097,40 $
1000
3,95 $
3 948,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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