HN2A01FU-Y(TE85L,F

Mfr. #:: HN2A01FU-Y(TE85L,F
Hersteller:: Toshiba
Beschreibung:: Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: HN2A01FU-Y(TE85L,F Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: HN2A01FU-Y(TE85L,F Datasheet
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Toshiba

Produktkategorie:: Bipolartransistoren - BJT

RoHS:: Y

Montageart:: SMD/SMT

Paket / Koffer:: US-6

Polarität des Transistors:: PNP

Aufbau:: Dual

Kollektor- Emitterspannung VCEO Max:: 50 V

Kollektor- Basisspannung VCBO:: 50 V

Emitter- Basisspannung VEBO:: 5 V

Kollektor-Emitter-Sättigungsspannung:: 0.1 V

Maximaler DC-Kollektorstrom:: 150 mA

Bandbreitenprodukt fT gewinnen:: 80 MHz

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 125 C

Serie:: HN2A01

DC-Stromverstärkung hFE Max:: 400

Verpackung:: Spule

Marke:: Toshiba

DC-Kollektor/Basisverstärkung hfe Min:: 120

Pd - Verlustleistung:: 200 mW

Produktart:: BJTs - Bipolartransistoren

Werkspackungsmenge:: 3000

Unterkategorie:: Transistoren

Tags: HN2A01FU-Y(T, HN2A01FU-Y, HN2A01FU, HN2A01F, HN2A0, HN2A, HN2

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HN2A01FU-Y(TE85L,F Beschreibung

***i-Key: TRANS 2PNP 50V 0.15A US6

*** Source Electronics: Trans GP BJT NPN/PNP 50V 0.15A 150mW 6-Pin UMT T/R / TRANS NPN/PNP 50V 0.15A 6UMT

***(Formerly Allied Electronics): ROHM UMZ1NTR Dual NPN+PNP Bipolar Transistor, 0.15 A, 50 V, 6-Pin SC-88 | ROHM Semiconductor UMZ1NTR

***ure Electronics: UMZ1N Series 50 V 150 mA SMT NPN/PNP General Purpose Dual Transistor - SC-88

***ment14 APAC: Transistor DUAL UM6 PNP/NPN; Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:150mW; DC

***nell: TRANSISTOR DUAL UM6 PNP/NPN; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 150mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 180MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: General Purpose; Transition Frequency ft: 180MHz

***(Formerly Allied Electronics): ROHM UMT2NTR Dual PNP Bipolar Transistor, 0.15 A, 50 V, 6-Pin SC-88 | ROHM Semiconductor UMT2NTR

***ure Electronics: UMT2N Series 50 V 150 mA SMT Dual PNP General purpose Transistor-SC-88

***ment14 APAC: TRANSISTOR DUAL UM6 PNP/PNP; Module Configuration:Dual; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:140MHz; Power Dissipation Pd:150mW; DC Collector Current:-150mA; DC Current Gain hFE:120; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-500mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:140MHz; Hfe Min:120; Package / Case:SOT-363; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, PNP, Silicon

***ark: Bipolar Array, Dual Pnp, 65V/0.1A/Sot363 Rohs Compliant: Yes |Diodes Inc. BC856AS-7

*** Source Electronics: Trans GP BJT PNP 65V 0.1A 200mW 6-Pin SOT-363 T/R / TRANS 2PNP 65V 0.1A SOT363

***ure Electronics: BC856AS Series 65 V 100 mA Dual PNP SMT Small Signal Transistor - SOT-363

***ark: Transistor, Npn/Pnp, 50V, 0.1A, Sot363 Rohs Compliant: Yes |Diodes Inc. DCX114EU-7-F

***nsix Microsemi: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ure Electronics: DCX114EU Series 50 V 100 mA NPN/PNP Surface Mount Dual Transistor - SOT-363-6

***ical: Trans Digital BJT NPN/PNP 50V 100mA 200mW 6-Pin SOT-363 T/R

***ment14 APAC: Transistor, NPN/PNP, 50V, 0.1A, SOT363;

***(Formerly Allied Electronics): PNP Biased Signal Dual Transistor SOT363 | Diodes Inc DDA114YU-7-F

***ical: Trans Digital BJT PNP 50V 100mA 200mW 6-Pin SOT-363 T/R

***ment14 APAC: RF Transistor, 50V, 0.1A, SOT-363;

***des Inc SCT: Dual PNP, 50V, 0.1A, SOT363, 200mW

***ronik: PNP DIGI.-TR.10K/47K 50V SOT363

***ark: Prebias Transistor Sot363 T&r 3K

***S: French Electronic Distributor since 1988

***i-Key: TRANS 2PNP PREBIAS 0.2W SOT363

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon

***ponent Stockers USA: 100 mA 65 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR

***Yang: BJT,NPN/PNP,dual,65V,100mA,TSSOP6, RL

***ment14 APAC: TRANSISTOR, NPN, 65V, 100MA, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (19-Dec-2012)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
HN2A01FU-Y(TE85L,F DISTI # HN2A01FU-Y(TE85LFTR-ND	Toshiba America Electronic Components	TRANS 2PNP 50V 0.15A US6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.0507
HN2A01FU-Y(TE85L,F DISTI # HN2A01FU-Y(TE85LFCT-ND	Toshiba America Electronic Components	TRANS 2PNP 50V 0.15A US6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2851In Stock	1000:$0.0579 500:$0.0852 250:$0.0999 100:$0.1590 25:$0.2044 10:$0.2840 1:$0.3100
HN2A01FU-Y(TE85L,F DISTI # HN2A01FU-Y(TE85LFDKR-ND	Toshiba America Electronic Components	TRANS 2PNP 50V 0.15A US6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
HN2A01FU-Y(TE85L,F DISTI # 757-HN2A01FU-YTE85LF	Toshiba America Electronic Components	Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A RoHS: Compliant	2759	1:$0.5500 10:$0.3030 100:$0.1300 1000:$0.1000 3000:$0.0760 9000:$0.0680 24000:$0.0630 45000:$0.0560 99000:$0.0540

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: HN2A01FU-GR(TE85LF OMO.#: OMO-HN2A01FU-GR-TE85LF	Bipolar Transistors - BJT Trans LFreq -50V PNP PNP -0.15A
	Mfr.#: HN2A01FU-Y(TE85L,F OMO.#: OMO-HN2A01FU-Y-TE85L-F	Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A
	Mfr.#: HN2A01FU-GR(TE85LF OMO.#: OMO-HN2A01FU-GR-TE85LF-TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - BJT Trans LFreq -50V PNP PNP -0.15A
	Mfr.#: HN2A01FU-GR(TE85LFCT-ND OMO.#: OMO-HN2A01FU-GR-TE85LFCT-ND-1190	Neu und Original
	Mfr.#: HN2A01FU-GR(TE85LFDKR-ND OMO.#: OMO-HN2A01FU-GR-TE85LFDKR-ND-1190	Neu und Original
	Mfr.#: HN2A01FU-Y(TE85LFDKR-ND OMO.#: OMO-HN2A01FU-Y-TE85LFDKR-ND-1190	Neu und Original
	Mfr.#: HN2A01FU-GR OMO.#: OMO-HN2A01FU-GR-1190	150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
	Mfr.#: HN2A01FU-GR(TE85L) OMO.#: OMO-HN2A01FU-GR-TE85L--1190	Neu und Original
	Mfr.#: HN2A01FU-Y OMO.#: OMO-HN2A01FU-Y-1190	Neu und Original
	Mfr.#: HN2A01FU-Y(TE85L OMO.#: OMO-HN2A01FU-Y-TE85L-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1985
Menge eingeben:

Der aktuelle Preis von HN2A01FU-Y(TE85L,F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,55 $~~; ~~0,55 $~~

10: ~~0,30 $~~; ~~3,03 $~~

100: ~~0,13 $~~; ~~13,00 $~~

1000: ~~0,10 $~~; ~~100,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

HN2A01FU-Y(TE85L,F

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes