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STBV42-AP

STBV42-AP
Mfr. #:
STBV42-AP
Hersteller:
STMicroelectronics
Beschreibung:
Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STBV42-AP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STBV42-AP DatasheetSTBV42-AP Datasheet (P4-P6)STBV42-AP Datasheet (P7-P9)STBV42-AP Datasheet (P10)
ECAD Model:
Mehr Informationen:
STBV42-AP Mehr Informationen STBV42-AP Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
400 V
Emitter- Basisspannung VEBO:
9 V
Kollektor-Emitter-Sättigungsspannung:
0.4 V
Maximaler DC-Kollektorstrom:
1 A
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
STBV42
Höhe:
4.5 mm
Länge:
4.8 mm
Verpackung:
Munitionspackung
Breite:
3.8 mm
Marke:
STMicroelectronics
Kontinuierlicher Kollektorstrom:
1 A
Pd - Verlustleistung:
1 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
2000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.016000 oz
Tags
STBV42, STBV4, STBV, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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NPN POWER TRANSISTOR, 400 V, 1 A, 3-TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:2.1W; DC Collector Current:1A; DC Current Gain hFE:20; No. of Pins:3; Package / Case:3-TO-92
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Transistor, NPN, 0.5A, 400V, E-Line | Diodes Inc ZTX458
***ment14 APAC
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:1W; DC Collector Current:300mA; DC Current Gain hFE:100; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:300mA; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:300mA; Current Ic hFE:50mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:50MHz; Gain Bandwidth ft Typ:50MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:400V
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ZTX658 Series 400 V 0.5 A NPN Silicon Planar Medium Power Transistor - TO-92-3
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BIPOLAR TRANSISTOR, NPN, 400V; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:400V; Transition Frequency Typ, ft:50MHz; Power Dissipation, Pd:1W; DC Collector Current:500mA; DC Current Gain Max (hfe):50 ;RoHS Compliant: Yes
***ment14 APAC
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:50; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:500mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:500mA; Current Ic hFE:200mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:50MHz; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:400V
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TRANSISTOR, BIPOL, NPN, 400V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 625mW; DC Collector Current: 300mA; DC Current Gain hFE: 40hFE; Trans
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Teil # Mfg. Beschreibung Aktie Preis
STBV42-AP
DISTI # 497-12546-1-ND		STMicroelectronicsTRANS NPN 400V 1A TO-92
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		99In Stock
  • 1000:$0.2563
  • 500:$0.3245
  • 100:$0.4063
  • 10:$0.5360
  • 1:$0.6200
STBV42-AP
DISTI # 497-12546-3-ND		STMicroelectronicsTRANS NPN 400V 1A TO-92
RoHS: Compliant
Min Qty: 2000
Container: Tape & Box (TB)		Temporarily Out of Stock
  • 10000:$0.2026
  • 6000:$0.2158
  • 2000:$0.2290
STBV42-AP
DISTI # STBV42-AP		STMicroelectronicsTrans GP BJT NPN 400V 1A 3-Pin TO-92 Ammo (Alt: STBV42-AP)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Europe - 0
    STBV42-AP
    DISTI # STBV42-AP    		STMicroelectronicsTrans GP BJT NPN 400V 1A 3-Pin TO-92 Ammo - Ammo Pack (Alt: STBV42-AP)
    RoHS: Compliant
    Min Qty: 4000
    Container: Ammo Pack    		Americas - 0
    • 4000:$0.1879
    • 8000:$0.1799
    • 12000:$0.1709
    • 20000:$0.1639
    • 40000:$0.1599
    STBV42-AP
    DISTI # 511-STBV42-AP    		STMicroelectronicsBipolar Transistors - BJT NPN Hi-Volt Fast Sw
    RoHS: Compliant    		4328
    • 1:$0.5500
    • 10:$0.4550
    • 100:$0.2780
    • 1000:$0.2150
    • 2000:$0.1830
    • 10000:$0.1710
    • 24000:$0.1620
    • 50000:$0.1580
    STBV42-APSTMicroelectronics 2000
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von STBV42-AP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,54 $
      0,54 $
      10
      0,45 $
      4,55 $
      100
      0,28 $
      27,80 $
      1000
      0,22 $
      215,00 $
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