STGWA60H65DFB

Mfr. #:: STGWA60H65DFB
Hersteller:: STMicroelectronics
Beschreibung:: IGBT BIPO 650V 60A TO247-3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: STGWA60H65DFB Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: STGWA60H65DFB Mehr Informationen STGWA60H65DFB Product Details

Produkteigenschaft
Attributwert

Hersteller: STMicroelectronics

Produktkategorie: IGBTs - Single

Serie: 600-650V IGBTs

Verpackung: Rohr

Gewichtseinheit: 1.340411 oz

Montageart: Durchgangsloch

Paket-Koffer: TO-247-3

Eingabetyp: Standard

Befestigungsart: Durchgangsloch

Lieferanten-Geräte-Paket: TO-247 Long Leads

Aufbau: Single

Leistung max: 375W

Reverse-Recovery-Time-trr: 60ns

Strom-Kollektor-Ic-Max: 80A

Spannungs-Kollektor-Emitter-Breakdown-Max: 650V

IGBT-Typ: Grabenfeldstopp

Strom-Kollektor-gepulster-Icm: 240A

Vce-on-Max-Vge-Ic: 2V @ 15V, 60A

Schaltenergie: 1.59mJ (on), 900μJ (off)

Gate-Gebühr: 306nC

Td-ein-aus-25°C: 66ns/210ns

Testbedingung: 400V, 60A, 10 Ohm, 15V

Pd-Verlustleistung: 375 W

Maximale-Betriebstemperatur: + 175 C

Mindest-Betriebstemperatur: - 55 C

Kollektor-Emitter-Spannung-VCEO-Max: 650 V

Kollektor-Emitter-Sättigungsspannung: 2 V

Kontinuierlicher Kollektorstrom-bei-25-C: 80 A

Gate-Emitter-Leckstrom: 250 nA

Maximale Gate-Emitter-Spannung: +/- 20 V

Kontinuierlicher Kollektor-Strom-Ic-Max: 80 A

Tags: STGWA, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGWA60H65DFB Beschreibung

***ical: Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube

***ronik: IGBT 650V 60A 1,85V TO247 long

***i-Key: IGBT BIPO 650V 60A TO247-3

***ark: Ptd High Voltage

STGWA60H65DFB Mehr Informationen

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
STGWA60H65DFB DISTI # V99:2348_17623306	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	595	1000:$2.7519 500:$3.2930 100:$3.8850 10:$4.4330 1:$5.7783
STGWA60H65DFB DISTI # 497-16006-5-ND	STMicroelectronics	IGBT BIPO 650V 60A TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	86In Stock	2520:$2.8000 510:$3.4860 120:$4.0950 30:$4.7250 10:$4.9980 1:$5.5700
STGWA60H65DFB DISTI # 32341623	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	595	3:$5.7783
STGWA60H65DFB DISTI # STGWA60H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: STGWA60H65DFB) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€2.2900 500:€2.4900 100:€2.5900 50:€2.6900 25:€2.7900 10:€2.8900 1:€3.1900
STGWA60H65DFB DISTI # STGWA60H65DFB	STMicroelectronics	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGWA60H65DFB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$2.4900 3600:$2.5900 2400:$2.6900 1200:$2.7900 600:$2.8900
STGWA60H65DFB DISTI # 26Y5801	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$2.6000 250:$2.6800 100:$3.2000 50:$3.7000 25:$3.9400 10:$4.5000 1:$5.2000
STGWA60H65DFB DISTI # 511-STGWA60H65DFB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed RoHS: Compliant	633	1:$5.2900 10:$4.5000 100:$3.9000 250:$3.7000 500:$3.3200 1000:$2.8000 2500:$2.6600
STGWA60H65DFB DISTI # IGBT1887	STMicroelectronics	IGBT 650V 60A 1,85V TO247 long RoHS: Compliant	Stock DE - 5Stock HK - 0Stock US - 0	30:$3.4900 60:$3.2700 90:$3.2200 150:$3.1600 240:$2.9800

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: STGWA60H65DFB OMO.#: OMO-STGWA60H65DFB	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
	Mfr.#: STGWA60V60DF OMO.#: OMO-STGWA60V60DF	IGBT Transistors 600 V, 60 A very high speed trench gate field-stop IGBT
	Mfr.#: STGWA60V60DF OMO.#: OMO-STGWA60V60DF-STMICROELECTRONICS	IGBT BIPO 600V 60A TO247-3
	Mfr.#: STGWA60H65DFB OMO.#: OMO-STGWA60H65DFB-STMICROELECTRONICS	IGBT BIPO 650V 60A TO247-3

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von STGWA60H65DFB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

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Stückpreis
ext. Preis

1: ~~0,00 $~~; ~~0,00 $~~

10: ~~0,00 $~~; ~~0,00 $~~

100: ~~0,00 $~~; ~~0,00 $~~

500: ~~0,00 $~~; ~~0,00 $~~

1000: ~~0,00 $~~; ~~0,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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STGWA60H65DFB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes