QIS1760002

QIS1760002
Mfr. #:
QIS1760002
Hersteller:
Powerex Power Semiconductors
Beschreibung:
IGBT MODULE, NPN, 1.7KV, 600A, Transistor Polarity:NPN, DC Collector Current:600A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:4.66kW, Collector Emitter Voltage V(br)ceo
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
QIS1760002 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
QIS
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Module, Npn, 1.7Kv, 600A; Transistor Polarity:npn; Dc Collector Current:600A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:4.66Kw; Collector Emitter Voltage V(Br)Ceo:1.7Kv; No. Of Pins:-; Product Range:-Rohs Compliant: No
Teil # Mfg. Beschreibung Aktie Preis
QIS1760002
DISTI # 43Y3579
Powerex Power SemiconductorsIGBT MODULE, NPN, 1.7KV, 600A,Transistor Polarity:NPN,DC Collector Current:600A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:4.66kW,Collector Emitter Voltage V(br)ceo:1.7kV,No. of Pins:-,Product Range:-RoHS Compliant: No0
    Bild Teil # Beschreibung
    QIS1760002

    Mfr.#: QIS1760002

    OMO.#: OMO-QIS1760002-1190

    IGBT MODULE, NPN, 1.7KV, 600A, Transistor Polarity:NPN, DC Collector Current:600A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:4.66kW, Collector Emitter Voltage V(br)ceo
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von QIS1760002 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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