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IPC055N03L3X1SA1

IPC055N03L3X1SA1
Mfr. #:
IPC055N03L3X1SA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET LV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPC055N03L3X1SA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
STERBEN
Marke:
Infineon-Technologien
Produktart:
MOSFET
Unterkategorie:
MOSFETs
Teil # Aliase:
IPC055N03L3 IPC55N3L3XJ SP000448980
Tags
IPC0, IPC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V DIE Wafer
***i-Key
MOSFET N-CH 30V 1A SAWN ON FOIL
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. OptiMOS 30V products are tailored to the needs of power management in notebook by improved EMI behavior as increased battery life. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance due to lowest figure of merits R on x Q g and R on x Q gd; Low gate resistance; Excellent 5V gate drive performance; Optimized EMI behavior based on an integrated damping network; Super barrier diode may improved efficiency by upwards of 2%. | Benefits: Save overall system costs by reducing the number of phases in multiphase converters; Highest efficiency; Smallest footprint and highest power density with S3O8 & CanPAK; Easy to design-in; Can be driven from 5V system rail giving excellent performance | Target Applications: On board power for server; Power management for mobile computing; Synchronous rectification; High power density point of load converters
Teil # Mfg. Beschreibung Aktie Preis
IPC055N03L3X1SA1
DISTI # V36:1790_06391752		Infineon Technologies AGTrans MOSFET N-CH 30V Wafer
RoHS: Compliant		0
    IPC055N03L3X1SA1
    DISTI # IPC055N03L3X1SA1-ND    		Infineon Technologies AGMOSFET N-CH 30V 1A SAWN ON FOIL
    RoHS: Compliant
    Min Qty: 25450
    Container: Bulk    		Temporarily Out of Stock
    • 25450:$0.4981
    IPC055N03L3X1SA1
    DISTI # IPC055N03L3X1SA1    		Infineon Technologies AGTrans MOSFET N-CH 30V DIE Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IPC055N03L3X1SA1)
    RoHS: Compliant
    Min Qty: 25450
    Container: Waffle Pack    		Americas - 0
    • 254500:$0.4519
    • 127250:$0.4599
    • 76350:$0.4759
    • 50900:$0.4939
    • 25450:$0.5119
    IPC055N03L3X1SA1
    DISTI # IPC055N03L3    		Infineon Technologies AGTrans MOSFET N-CH 30V DIE Wafer (Alt: IPC055N03L3)
    RoHS: Compliant
    Min Qty: 25450    		Asia - 0
    • 1272500:$0.4504
    • 636250:$0.4561
    • 254500:$0.4621
    • 127250:$0.4682
    • 76350:$0.4808
    • 50900:$0.4942
    • 25450:$0.5083
    Bild Teil # Beschreibung
    IPC055N03L3X1SA1

    Mfr.#: IPC055N03L3X1SA1

    OMO.#: OMO-IPC055N03L3X1SA1

    		 MOSFET LV POWER MOS
    IPC055N03L3X1SA1

    Mfr.#: IPC055N03L3X1SA1

    OMO.#: OMO-IPC055N03L3X1SA1-INFINEON-TECHNOLOGIES

    		 MOSFET LV POWER MOS
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von IPC055N03L3X1SA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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