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DMT6016LPS-13

DMT6016LPS-13
Mfr. #:
DMT6016LPS-13
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMT6016LPS-13 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMT6016LPS-13 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerDI5060-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
10.6 A
Rds On - Drain-Source-Widerstand:
16 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
17 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.7 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
DMT60
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
5.2 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
13 ns
Typische Einschaltverzögerungszeit:
3.4 ns
Gewichtseinheit:
0.003386 oz
Tags
DMT6016, DMT601, DMT60, DMT6, DMT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, N-Channel MOSFET, 32 A, 60 V, 8-Pin POWERDI5060 Diodes Inc DMT6016LPS-13
***ical
Trans MOSFET N-CH 60V 10.6A Automotive 8-Pin PowerDI EP T/R
***et
Trans MOSFET N-CH 60V 32A 8-Pin PowerDI 5060 T/R
***ure Electronics
MOSFET BVDSS: 41V~60V POWERDI5060-8 T&R 2.5K
***i-Key
MOSFET N-CH 60V 10.6A POWERDI
***ment14 APAC
MOSFET, N-CH, 32A, 60V, POWERDI5060; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:60V; On Resistance Rds(On):15Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:1.23W; No. Of Pins:8Pins Rohs Compliant: No
DMTx MOSFETs
Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.
DMT6016LPS Enhancement Mode MOSFET
Diodes Incorporated DMT6016LPS 60V N-Channel Enhancement Mode MOSFET minimizes the on-state resistance (RDS(ON)) while maintaining superior switching performance. DMT6016LPS offers low on-state resistance, high conversion efficiency, and low input capacitance. The thermally efficient POWERDI5060-8 package allows DMT6016LPS to support cooler running applications. With a <1.1mm package profile, DMT6016LPS is ideal for thin applications including load switches, adapter switches, and notebook PCs.Learn More
Gate Drivers
Diodes Incorporated Gate Drivers cover a multitude of applications in power systems and motor drives. These gate drivers act as the interface between microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.
Teil # Mfg. Beschreibung Aktie Preis
DMT6016LPS-13
DISTI # DMT6016LPS-13DICT-ND		Diodes IncorporatedMOSFET N-CH 60V 10.6A POWERDI
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11298In Stock
  • 1000:$0.2774
  • 500:$0.3589
  • 100:$0.4895
  • 10:$0.6530
  • 1:$0.7700
DMT6016LPS-13
DISTI # DMT6016LPS-13DIDKR-ND		Diodes IncorporatedMOSFET N-CH 60V 10.6A POWERDI
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11298In Stock
  • 1000:$0.2774
  • 500:$0.3589
  • 100:$0.4895
  • 10:$0.6530
  • 1:$0.7700
DMT6016LPS-13
DISTI # DMT6016LPS-13DITR-ND		Diodes IncorporatedMOSFET N-CH 60V 10.6A POWERDI
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		10000In Stock
  • 2500:$0.2455
DMT6016LPS-13
DISTI # DMT6016LPS-13		Diodes IncorporatedTrans MOSFET N-CH 60V 32A 8-Pin PowerDI 5060 T/R - Tape and Reel (Alt: DMT6016LPS-13)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 17500
  • 2500:$0.2059
  • 5000:$0.2059
  • 10000:$0.2049
  • 15000:$0.2049
  • 25000:$0.2039
DMT6016LPS-13Diodes IncorporatedN-Channel 60 V 16 mO Enhancement Mode Mosfet - PowerDI-5060-8
RoHS: Compliant		5000Reel
  • 2500:$0.2850
DMT6016LPS-13
DISTI # 621-DMT6016LPS-13		Diodes IncorporatedMOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
RoHS: Compliant		5980
  • 1:$0.6300
  • 10:$0.5200
  • 100:$0.3170
  • 1000:$0.2450
  • 2500:$0.2090
DMT6016LPS-13
DISTI # 9211173P		Zetex / Diodes Inc60V 10.6A N-CH MOSFET TRANS, RL2480
  • 200:£0.1620
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SESD0402X1BN-0010-098

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OMO.#: OMO-SESD0402X1BN-0010-098-LITTELFUSE

 TVS Diodes - Transient Voltage Suppressors 1-CH 0402 9V Bi-Di .10pF 20kV SESD
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1985
Menge eingeben:
Der aktuelle Preis von DMT6016LPS-13 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,63 $
0,63 $
10
0,52 $
5,20 $
100
0,32 $
31,70 $
1000
0,24 $
245,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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