AS6C4008-70SANTR

AS6C4008-70SANTR
Mfr. #:
AS6C4008-70SANTR
Hersteller:
Alliance Memory
Beschreibung:
SRAM 4M 512Kx8 70ns 2.7-5.5V Asynch AT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AS6C4008-70SANTR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
AS6C4008-70SANTR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Allianzgedächtnis
Produktkategorie:
SRAM
RoHS:
Y
Speichergröße:
4 Mbit
Organisation:
512 k x 8
Zugriffszeit:
70 ns
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
5.5 V
Versorgungsspannung - Min.:
2.7 V
Versorgungsstrom - Max.:
50 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Montageart:
SMD/SMT
Paket / Koffer:
SOP-32
Verpackung:
Spule
Speichertyp:
Flüchtig
Serie:
AS6C4008
Typ:
SRAM
Marke:
Allianzgedächtnis
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
1000
Unterkategorie:
Speicher & Datenspeicherung
Tags
AS6C400, AS6C4, AS6C, AS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Low Power CMOS SRAM
Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.
Bild Teil # Beschreibung
AS6C4008A-55BIN

Mfr.#: AS6C4008A-55BIN

OMO.#: OMO-AS6C4008A-55BIN

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
AS6C4008-55ZINTR

Mfr.#: AS6C4008-55ZINTR

OMO.#: OMO-AS6C4008-55ZINTR

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
AS6C4008-55BINTR

Mfr.#: AS6C4008-55BINTR

OMO.#: OMO-AS6C4008-55BINTR

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
AS6C4008-70SANTR

Mfr.#: AS6C4008-70SANTR

OMO.#: OMO-AS6C4008-70SANTR

SRAM 4M 512Kx8 70ns 2.7-5.5V Asynch AT
AS6C4008-55STINR

Mfr.#: AS6C4008-55STINR

OMO.#: OMO-AS6C4008-55STINR-ALLIANCE-MEMORY

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
AS6C4008A-55BIN

Mfr.#: AS6C4008A-55BIN

OMO.#: OMO-AS6C4008A-55BIN-ALLIANCE-MEMORY

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
AS6C4008A-55TINTR

Mfr.#: AS6C4008A-55TINTR

OMO.#: OMO-AS6C4008A-55TINTR-ALLIANCE-MEMORY

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
AS6C4008A-55STINTR

Mfr.#: AS6C4008A-55STINTR

OMO.#: OMO-AS6C4008A-55STINTR-ALLIANCE-MEMORY

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
AS6C4008A-55ZIN

Mfr.#: AS6C4008A-55ZIN

OMO.#: OMO-AS6C4008A-55ZIN-ALLIANCE-MEMORY

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
AS6C4008-55ZIN

Mfr.#: AS6C4008-55ZIN

OMO.#: OMO-AS6C4008-55ZIN-ALLIANCE-MEMORY

SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von AS6C4008-70SANTR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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