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VBH40-05B

VBH40-05B
Mfr. #:
VBH40-05B
Hersteller:
IXYS
Beschreibung:
Discrete Semiconductor Modules 40 Amps 500V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
VBH40-05B Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
VBH40-05B Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Modul
Serie
HiPerFET
Produkt
Leistungshalbleitermodule
Typ
H-Brücken-MOSFET-Module
Verpackung
Schüttgut
Montageart
Schraube
Paket-Koffer
V2-PAK
Betriebstemperatur
-40°C ~ 150°C (TJ)
Befestigungsart
Chassishalterung
Lieferanten-Geräte-Paket
V2-PAK
FET-Typ
4 N-Channel (H-Bridge)
Leistung max
-
Drain-zu-Source-Spannung-Vdss
500V
Eingangskapazität-Ciss-Vds
-
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
40A
Rds-On-Max-Id-Vgs
116 mOhm @ 30A, 10V
Vgs-th-Max-Id
4V @ 8mA
Gate-Lade-Qg-Vgs
270nC @ 10V
Tags
VBH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ukat
N-Ch-H-Bridge+Rectif. 500V 40A V2-Pack
***i-Key
MOSFET 4N-CH 500V 40A V2
***el Nordic
Contact for details
***icroelectronics
N-Channel 500V - 0.08 Ohm - 48A - ISOTOP MDmesh MOSFET
***ser
Power MOSFET Transistors N-Ch 500 Volt 48 Amp
***ical
Trans MOSFET N-CH 500V 48A 4-Pin ISOTOP Tube
***ure Electronics
N-Channel 550 V 0.1 O MDmesh™ Power Mosfet - ISOTOP
***(Formerly Allied Electronics)
MOSFET N-Channel 500V 48A ISOTOP4
***r Electronics
Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***et
STMICROELECTRONICS STE48NM50 MOSFETS
***ment14 APAC
MOSFET, N CH, 550V, 48A, ISOTOP; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:550V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:450W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:ISOTOP; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:48A; Package / Case:ISOTOP; Power Dissipation Pd:450W; Termination Type:Screw; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II MOSFET
***ser
Power MOSFET Transistors N-Ch 600 Volt 40 Amp
***ical
Trans MOSFET N-CH 600V 40A 4-Pin ISOTOP Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 600V 40A ISOTOP4
***ukat
N-Ch 600V 40A 460W 0,13R SOT227B
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***icroelectronics SCT
Power MOSFETs, 600V, 40A, ISOTOP, Tube
***et
STMICROELECTRONICS STE40NC60 MOSFETS
***nell
MOSFET, N SOT-227; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation P
***icroelectronics
N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFET
***ark
MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:460W; RoHS Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 53 / Drain-Source Voltage (Vds) V = 500 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 30 / Fall Time ns = 38 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 46 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = ISOTOP / Pins = 4 / Mounting Type = SMD / Packaging = Tube / Power Dissipation (Pd) W = 460
***icroelectronics
N-Channel 500V - 0.045 Ohm - 70A - ISOTOP Zener-Protected MDmesh MOSFET
***ser
Power MOSFET Transistors N-Ch 500 Volt 70 Amp
***ical
Trans MOSFET N-CH 500V 70A 4-Pin ISOTOP Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 500V 70A MDMESH ISOTOP4
***ponent Stockers USA
70 A 500 V 0.05 ohm N-CHANNEL Si POWER MOSFET
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 70A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***et
STMICROELECTRONICS STE70NM50 MOSFETS
***nell
MOSFET, N CH, 500V, 70A, ISOTOP; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 600W; Transistor Case Style: ISOTOP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 70A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Screw; Transistor Type: Power MOSFET; Voltage Vds Typ: 500V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
***ure Electronics
STGE200NB60S Series N-Channel 600 V 200 A Low Drop PowerMESH IGBT - ISOTOP
***ical
Trans IGBT Module N-CH 600V 200A 600000mW 4-Pin ISOTOP Tube
***el Electronic
STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 150Amp
***(Formerly Allied Electronics)
Transistor IGBT N-Ch 600V 200A ISOTOP4
***ronik
IGBT 600V 200A 1.6V ISOTOP RoHSconf
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
***icroelectronics SCT
Short-circuit rugged IGBT, ISOTOP, Tube
***trelec
N-Channel IGBT, 600V, 200A, ISOTOP
***nell
IGBT MODULE, 600V, 200A, 600W; DC Collector Current: 200A; Collector Emitter Saturation Voltage Vce(on): 1.2V; Power Dissipation Pd: 600W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: ISOTOP; No. of Pins: 4
***i-Key
IGBT MOD 600V 200A 600W ISOTOP
***icroelectronics
N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP package
***ure Electronics
N-Channel 650 V 15 mO 414 nC Chassis Mount Power Mosfet - ISOTOP
***ark
MOSFET, N-CH, 650V, 143A, ISOTOP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:143A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:4Pins RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
VBH40-05B
DISTI # VBH40-05B-ND		IXYS CorporationMOSFET 4N-CH 500V 40A V2
RoHS: Compliant
Min Qty: 6
Container: Box		Temporarily Out of Stock
  • 6:$82.2033
VBH40-05B
DISTI # 747-VBH40-05B		IXYS CorporationDiscrete Semiconductor Modules 40 Amps 500V
RoHS: Compliant		0
    Bild Teil # Beschreibung
    VBH40-05B

    Mfr.#: VBH40-05B

    OMO.#: OMO-VBH40-05B-IXYS-CORPORATION

    		 Discrete Semiconductor Modules 40 Amps 500V
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von VBH40-05B dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    123,30 $
    123,30 $
    10
    117,14 $
    1 171,40 $
    100
    110,97 $
    11 097,45 $
    500
    104,81 $
    52 404,60 $
    1000
    98,64 $
    98 644,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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