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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| H5N2305P-E DISTI # H5N2305P-E | Renesas Electronics Corporation | - Bulk (Alt: H5N2305P-E) Min Qty: 50 Container: Bulk | Americas - 0 |
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| H5N2305P-E | Renesas Electronics Corporation | Power Field-Effect Transistor RoHS: Compliant | 310 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: H5N2001LMTL-E OMO.#: OMO-H5N2001LMTL-E-1190 |
Neu und Original |
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Mfr.#: H5N2004DSTLE OMO.#: OMO-H5N2004DSTLE-1190 |
Neu und Original |
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Mfr.#: H5N2005DSTL-E OMO.#: OMO-H5N2005DSTL-E-1190 |
Trans MOSFET N-CH 200V 6A 3-Pin DPAK T/R (Alt: H5N2005DSTL-E) |
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Mfr.#: H5N2007FN-E OMO.#: OMO-H5N2007FN-E-1190 |
Power Field-Effect Transistor, 25A I(D), 200V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: H5N2305PF OMO.#: OMO-H5N2305PF-1190 |
Neu und Original |
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Mfr.#: H5N2512FL-M0 OMO.#: OMO-H5N2512FL-M0-1190 |
Neu und Original |
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Mfr.#: H5N2512FN-E OMO.#: OMO-H5N2512FN-E-1190 |
Power Field-Effect Transistor, 18A I(D), 250V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: H5N2515P OMO.#: OMO-H5N2515P-1190 |
Neu und Original |
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Mfr.#: H5N2522 OMO.#: OMO-H5N2522-1190 |
Neu und Original |
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Mfr.#: H5N2901FL-M0 OMO.#: OMO-H5N2901FL-M0-1190 |
Neu und Original |