2MBI200S-120-50

2MBI200S-120-50
Mfr. #:
2MBI200S-120-50
Hersteller:
Fuji Electric Co Ltd
Beschreibung:
IGBT, DUAL, MODULE, 200A, 1200V, NPT, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.6V, Power Dissipation Pd:1.5kW, Collector Emitter Vo
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2MBI200S-120-50 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
2MBI200S, 2MBI20, 2MBI2, 2MBI, 2MB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Dual IGBT Module 200 A 1200V NPT; 300A; 2.6V
***ark
DUAL IGBT MODULE 200A 1200V NPT; Transistor Type:IGBT Module; Transistor Polarity:NPT; Voltage Vces:1200V; Max Current Ic Continuous a:300A; Max Voltage Vce Sat:2.6V; Power Dissipation:1500W; Case Style:M234; Termination Type:Screw; ;RoHS Compliant: Yes
***ment14 APAC
IGBT, DUAL, MODULE, 200A, 1200V, NPT; Module Configuration:Dual; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:1.5kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7; Current Ic @ Vce Sat:200A; Current Ic Continuous a Max:200A; Current Temperature:25°C; External Depth:62mm; External Length / Height:30mm; External Width:108mm; Fall Time tf:450ns; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; No. of Transistors:2; Package / Case:M234; Power Dissipation Max:1.5kW; Power Dissipation Pd:1.5kW; Power Dissipation Pd:1.5kW; Pulsed Current Icm:400A; Rise Time:350ns; Termination Type:Screw; Voltage Vces:1.2kV
Teil # Mfg. Beschreibung Aktie Preis
2MBI200S-120-50
DISTI # 56P5428
Fuji Electric Co LtdIGBT, DUAL, MODULE, 200A, 1200V, NPT,Transistor Polarity:N Channel,DC Collector Current:200A,Collector Emitter Saturation Voltage Vce(on):2.6V,Power Dissipation Pd:1.5kW,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:- RoHS Compliant: Yes0
    2MBI200S-120-50
    DISTI # 70212507
    Fuji Electric Co LtdDual IGBT Module 200 A 1200V NPT,300A,2.6V
    RoHS: Compliant
    0
    • 1:$194.0400
    • 5:$183.0600
    • 10:$173.2500
    • 25:$164.4400
    • 50:$156.4900
    2MBI200S-120-50
    DISTI # FE0000000001241
    Fuji Electric Co LtdIGBT STANDARD MODULE
    RoHS: Compliant
    0 in Stock0 on Order
    • 10:$188.9700
    • 1:$203.5000
    2MBI200S-120-50-M
    DISTI # FE0000000001242
    Fuji Electric Co LtdIGBT STANDARD MODULE
    RoHS: Compliant
    0 in Stock0 on Order
    • 10:$188.9700
    • 1:$203.5000
    2MBI200S-120-50
    DISTI # 1689579
    Fuji Electric Co LtdIGBT, DUAL, MODULE, 200A, 1200V, NPT
    RoHS: Compliant
    0
    • 10:$159.3100
    • 5:$162.0100
    • 2:$164.8000
    • 1:$167.7000
    Bild Teil # Beschreibung
    2MBI200L-120

    Mfr.#: 2MBI200L-120

    OMO.#: OMO-2MBI200L-120-1190

    Neu und Original
    2MBI200N-060-03

    Mfr.#: 2MBI200N-060-03

    OMO.#: OMO-2MBI200N-060-03-1190

    Neu und Original
    2MBI200PB-140

    Mfr.#: 2MBI200PB-140

    OMO.#: OMO-2MBI200PB-140-1190

    300A, 1400V, N-CHANNEL IGBT
    2MBI200S-120

    Mfr.#: 2MBI200S-120

    OMO.#: OMO-2MBI200S-120-1190

    Neu und Original
    2MBI200S-120-03

    Mfr.#: 2MBI200S-120-03

    OMO.#: OMO-2MBI200S-120-03-1190

    Neu und Original
    2MBI200U2A-060

    Mfr.#: 2MBI200U2A-060

    OMO.#: OMO-2MBI200U2A-060-1190

    IGBT STANDARD MODULE
    2MBI200U2A-060-50

    Mfr.#: 2MBI200U2A-060-50

    OMO.#: OMO-2MBI200U2A-060-50-1190

    IGBT, DUAL, MODULE, 200A, 600V, NPT, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:660W, Collector Emitter Vol
    2MBI200U4H-120-50

    Mfr.#: 2MBI200U4H-120-50

    OMO.#: OMO-2MBI200U4H-120-50-1190

    IGBT, 2 PACK MODULE 1200V, 200A, M234, Transistor Polarity:N Channel, DC Collector Current:200A, Collector Emitter Saturation Voltage Vce(on):2.05V, Power Dissipation Pd:1.04kW, Collector Emitter
    2MBI200U4H-120E

    Mfr.#: 2MBI200U4H-120E

    OMO.#: OMO-2MBI200U4H-120E-1190

    Neu und Original
    2MBI200U4H-170

    Mfr.#: 2MBI200U4H-170

    OMO.#: OMO-2MBI200U4H-170-1190

    300A, 1700V, N-CHANNEL IGBT
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von 2MBI200S-120-50 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    177,63 $
    177,63 $
    10
    168,75 $
    1 687,49 $
    100
    159,87 $
    15 986,70 $
    500
    150,99 $
    75 492,75 $
    1000
    142,10 $
    142 104,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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