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RJH60D2DPP-M0#T2

RJH60D2DPP-M0#T2
Mfr. #:
RJH60D2DPP-M0#T2
Hersteller:
Renesas Electronics
Beschreibung:
IGBT Transistors IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RJH60D2DPP-M0#T2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RJH60D2DPP-M0#T2 DatasheetRJH60D2DPP-M0#T2 Datasheet (P4-P6)RJH60D2DPP-M0#T2 Datasheet (P7-P9)RJH60D2DPP-M0#T2 Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Renesas Elektronik
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Verpackung:
Rohr
Marke:
Renesas Elektronik
Feuchtigkeitsempfindlich:
ja
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1
Unterkategorie:
IGBTs
Tags
RJH60D2DPP-M, RJH60D2DPP, RJH60D2D, RJH60D2, RJH60D, RJH60, RJH6, RJH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
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***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, HIGH SPEED, 600V, 25A TO-220FL; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 34W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FL; No. of
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***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.
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Igbt, Single, 600V, 24A, To-220F-3; Continuous Collector Current:24A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:54W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Onsemi NGTB15N60R2FG
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Trans IGBT Chip N-CH 600V 30A 178000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 30A 178W TO220-3
*** Stop Electro
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.
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Trans IGBT Chip N-CH 600V 30A 30000mW 3-Pin(3+Tab) TO-220FP Tube
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***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 15 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins:
***p One Stop
Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220 Tube
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Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***et
Trans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220FL Tube
***ronik
IGBT 600V 20A 2.5V TO220-3 RoHSconf
***nell
IGBT, HIGH SPEED, 600V, 20A TO-220FL; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FL; No. of
Bild Teil # Beschreibung
RJH60D2DPP-M0#T2

Mfr.#: RJH60D2DPP-M0#T2

OMO.#: OMO-RJH60D2DPP-M0-T2

 IGBT Transistors IGBT
RJH60D2DPE-00#J3

Mfr.#: RJH60D2DPE-00#J3

OMO.#: OMO-RJH60D2DPE-00-J3

 IGBT Transistors IGBT
RJH60D2DPP

Mfr.#: RJH60D2DPP

OMO.#: OMO-RJH60D2DPP-1190

 Neu und Original
RJH60D2DPP-M0

Mfr.#: RJH60D2DPP-M0

OMO.#: OMO-RJH60D2DPP-M0-1190

 Neu und Original
RJH60D2DPP-M0T2

Mfr.#: RJH60D2DPP-M0T2

OMO.#: OMO-RJH60D2DPP-M0T2-1190

 Neu und Original
RJH60D2DPPM0T2

Mfr.#: RJH60D2DPPM0T2

OMO.#: OMO-RJH60D2DPPM0T2-1190

 Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von RJH60D2DPP-M0#T2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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