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FDMC612PZ

FDMC612PZ
Mfr. #:
FDMC612PZ
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET P-CH. ER TRENCH MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMC612PZ Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-33-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
13 mOhms
Vgs th - Gate-Source-Schwellenspannung:
900 mV
Qg - Gate-Ladung:
53 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
26 W
Aufbau:
Single
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMC612PZ
Transistortyp:
1 P-Channel
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
81 ns
Produktart:
MOSFET
Anstiegszeit:
52 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
96 ns
Typische Einschaltverzögerungszeit:
26 ns
Gewichtseinheit:
0.006349 oz
Tags
FDMC6, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
P-Channel PowerTrench® MOSFET -20V, -14A, 8.4mΩ
*** Stop Electro
Power Field-Effect Transistor, 14A I(D), 20V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***rchild Semiconductor
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Teil # Mfg. Beschreibung Aktie Preis
FDMC612PZ
DISTI # FDMC612PZTR-ND		ON SemiconductorMOSFET P-CH 20V 8-MLP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    FDMC612PZ
    DISTI # FDMC612PZCT-ND    		ON SemiconductorMOSFET P-CH 20V 8-MLP
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDMC612PZ
      DISTI # FDMC612PZDKR-ND      		ON SemiconductorMOSFET P-CH 20V 8-MLP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDMC612PZ
        DISTI # 38X5353        		ON SemiconductorP-CH. ER TRENCH MOSFET / REEL0
          FDMC612PZ
          DISTI # 512-FDMC612PZ          		ON SemiconductorMOSFET P-CH. ER TRENCH MOSFET
          RoHS: Compliant          		0
            Bild Teil # Beschreibung
            10M04SAM153C8G

            Mfr.#: 10M04SAM153C8G

            OMO.#: OMO-10M04SAM153C8G

            		 FPGA - Field Programmable Gate Array
            10M04SAM153C8G

            Mfr.#: 10M04SAM153C8G

            OMO.#: OMO-10M04SAM153C8G-INTEL

            		 IC FPGA 112 I/O 153MBGA MAX 10
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            2000
            Menge eingeben:
            Der aktuelle Preis von FDMC612PZ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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