BUK7K52-60EX

BUK7K52-60EX
Mfr. #:
BUK7K52-60EX
Hersteller:
Nexperia
Beschreibung:
MOSFET Dual N-channel 60V Mosfet
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BUK7K52-60EX Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BUK7K52-60EX Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Nexperia
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
LFPAK33-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
15.4 A
Rds On - Drain-Source-Widerstand:
45 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
9.2 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
32 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Transistortyp:
2 N-Channel
Marke:
Nexperia
Abfallzeit:
5.4 ns
Produktart:
MOSFET
Anstiegszeit:
5.1 ns
Werkspackungsmenge:
1500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
8.4 ns
Typische Einschaltverzögerungszeit:
4.3 ns
Tags
BUK7K5, BUK7K, BUK7, BUK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
BUK7K52-60E - Dual N-channel 60 V, 45 mΩ standard level MOSFET
*** Stop Electro
Power Field-Effect Transistor, 20.7A I(D), N-Channel, Metal-oxide Semiconductor FET
***et Europe
Transistor MOSFET Array Dual N-CH 60V 15.4A 8-Pin LFPAK-56D T/R
***ical
Trans MOSFET N-CH 60V 15A Automotive 3-Pin(2+Tab) DPAK T/R
***i-Key
MOSFET N-CH 60V 15A TO252
***ment14 APAC
MOSFET,N CH,W DIODE,60V,15A,TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:33W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
***
60V N-CHANNEL
***ure Electronics
Dual N-Channel 60 V 43 mOhm SMT StripFET F3 Power Mosfet - PowerFLAT-5x6
***Yang
Trans MOSFET Array Dual N-CH 60V 20A 8-Pin Power Flat T/R - Tape and Reel
***ment14 APAC
MOSFET, DUAL N-CH, 60V, 20A, 52W; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Source Voltage Vds:60V; On Resistance
***nell
MOSFET, DUAL N-CH, 60V, 20A, 52W; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 52W; Transistor Case Style: PowerFLAT; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: STripFET F3 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
N-Channel PowerTrench® MOSFET, 60V, 18A, 55mΩ
***ure Electronics
N-Channel 60 V 55 mOhm Surface Mount PowerTrench Mosfet - TO-252-3
*** Stop Electro
Power Field-Effect Transistor, 18A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:60V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:18A; Package / Case:TO-252; Power Dissipation Pd:3.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***ure Electronics
N-Channel 60 V 40 mOhm Surface Mount Enhancement Mode Mosfet - TO-252-3
***itex
Transistor: N-MOSFET; unipolar; 60V; 20A; 0.04ohm; 42W; -55+150 deg.C; SMD; TO252(DPAK); AEC-Q100
***p One Stop
Trans MOSFET N-CH 60V 20A Automotive 3-Pin(2+Tab) TO-252 T/R
***emi
N-Channel Power Trench® MOSFET 60V, 17.6A, 26mΩ
***ical
Trans MOSFET N-CH 60V 17.6A Automotive 8-Pin Power 56 EP T/R
***ark
N-Channel Powertrench Mosfet / Tape Reel
***r Electronics
Power Field-Effect Transistor, 17.6A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
IC CPU SUPERV 4K EEPROM 8-SOIC
***emi
N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ
***ure Electronics
N-Channel 55 V 0.036 Ohm UltraFET Power Mosfet - TO-252AA
***r Electronics
Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321.
Automotive MOSFETs
Nexperia Automotive MOSFETs comprise a range of AEC-Q101 qualified devices that meet the stringent standards set by the automotive industry. These Nexperia automotive devices are designed for an operating environment that is far more hostile than that of power MOSFETs used in home and portable applications, and are ideal for thermally demanding environments due to their +175°C rating.
BUKx Automotive MOSFETs
Nexperia BUKx Automotive MOSFETs offer logic level N-channel MOSFETs featuring TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Teil # Mfg. Beschreibung Aktie Preis
BUK7K52-60EX
DISTI # V72:2272_06521981
NexperiaTrans MOSFET N-CH 60V 15.4A Automotive 8-Pin LFPAK-D T/R0
    BUK7K52-60EX
    DISTI # 1727-1892-2-ND
    NexperiaMOSFET 2N-CH 60V 15.4A LFPAK
    RoHS: Compliant
    Min Qty: 1500
    Container: Tape & Reel (TR)
    On Order
    • 10500:$0.2919
    • 7500:$0.2963
    • 3000:$0.3183
    • 1500:$0.3512
    BUK7K52-60EX
    DISTI # 1727-1892-1-ND
    NexperiaMOSFET 2N-CH 60V 15.4A LFPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 500:$0.4522
    • 100:$0.5720
    • 10:$0.7460
    • 1:$0.8500
    BUK7K52-60EX
    DISTI # 1727-1892-6-ND
    NexperiaMOSFET 2N-CH 60V 15.4A LFPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 500:$0.4522
    • 100:$0.5720
    • 10:$0.7460
    • 1:$0.8500
    BUK7K52-60EX
    DISTI # BUK7K52-60EX
    NexperiaTrans MOSFET N-CH 60V 17A 8-Pin LFPAK56D T/R (Alt: BUK7K52-60EX)
    RoHS: Compliant
    Min Qty: 1500
    Container: Tape and Reel
    Europe - 0
      BUK7K52-60EX
      DISTI # BUK7K52-60EX
      NexperiaTrans MOSFET N-CH 60V 17A 8-Pin LFPAK56D T/R (Alt: BUK7K52-60EX)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Asia - 0
      • 150000:$0.2744
      • 75000:$0.2814
      • 30000:$0.2851
      • 15000:$0.2888
      • 9000:$0.2966
      • 6000:$0.3049
      • 3000:$0.3136
      BUK7K52-60EX
      DISTI # BUK7K52-60EX
      NexperiaTrans MOSFET N-CH 60V 17A 8-Pin LFPAK56D T/R - Tape and Reel (Alt: BUK7K52-60EX)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 30000:$0.2639
      • 15000:$0.2699
      • 9000:$0.2769
      • 6000:$0.2849
      • 3000:$0.2879
      BUK7K52-60EX
      DISTI # 771-BUK7K52-60EX
      NexperiaMOSFET Dual N-channel 60V Mosfet
      RoHS: Compliant
      0
      • 1:$0.8200
      • 10:$0.6810
      • 100:$0.4390
      • 1000:$0.3520
      • 1500:$0.2970
      • 9000:$0.2860
      • 24000:$0.2750
      Bild Teil # Beschreibung
      BUK7K5R6-30E,115

      Mfr.#: BUK7K5R6-30E,115

      OMO.#: OMO-BUK7K5R6-30E-115

      MOSFET Dual N-channel 30 V 5.6 mo FET
      BUK7K5R1-30E,115

      Mfr.#: BUK7K5R1-30E,115

      OMO.#: OMO-BUK7K5R1-30E-115

      MOSFET Dual N-channel 30 V 5.1 mo FET
      BUK7K52-60EX

      Mfr.#: BUK7K52-60EX

      OMO.#: OMO-BUK7K52-60EX

      MOSFET Dual N-channel 60V Mosfet
      BUK7K52-60EX

      Mfr.#: BUK7K52-60EX

      OMO.#: OMO-BUK7K52-60EX-NEXPERIA

      MOSFET 2N-CH 60V 15.4A LFPAK
      BUK7K5R1-30E

      Mfr.#: BUK7K5R1-30E

      OMO.#: OMO-BUK7K5R1-30E-1190

      Neu und Original
      BUK7K5R1-30E,115

      Mfr.#: BUK7K5R1-30E,115

      OMO.#: OMO-BUK7K5R1-30E-115-NEXPERIA

      MOSFET 2N-CH 30V 40A LFPAK56D
      BUK7K5R6-30E,115

      Mfr.#: BUK7K5R6-30E,115

      OMO.#: OMO-BUK7K5R6-30E-115-NEXPERIA

      MOSFET 2N-CH 30V 40A LFPAK56D
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von BUK7K52-60EX dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,82 $
      0,82 $
      10
      0,68 $
      6,81 $
      100
      0,44 $
      43,90 $
      1000
      0,35 $
      352,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Neueste Produkte
      Top