IRF9Z24NSPBF

Mfr. #:: IRF9Z24NSPBF
Hersteller:: Infineon / IR
Beschreibung:: MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRF9Z24NSPBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF9Z24NSPBF Datasheet IRF9Z24NSPBF Datasheet (P4-P6)IRF9Z24NSPBF Datasheet (P7-P9)IRF9Z24NSPBF Datasheet (P10-P11)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 55 V

Id - Kontinuierlicher Drainstrom:: 12 A

Rds On - Drain-Source-Widerstand:: 175 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 12.7 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 45 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Rohr

Höhe:: 2.3 mm

Länge:: 6.5 mm

Transistortyp:: 1 P-Channel

Typ:: HEXFET Leistungs-MOSFET

Breite:: 6.22 mm

Marke:: Infineon / IR

Abfallzeit:: 37 ns

Produktart:: MOSFET

Anstiegszeit:: 55 ns

Werkspackungsmenge:: 1000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 23 ns

Typische Einschaltverzögerungszeit:: 13 ns

Teil # Aliase:: SP001551706

Gewichtseinheit:: 0.139332 oz

Tags: IRF9Z24NS, IRF9Z24N, IRF9Z24, IRF9Z2, IRF9Z, IRF9, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF9Z24NSPBF Beschreibung

***ernational Rectifier: -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

***ical: Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK

***ied Electronics & Automation: MOSFET, P-CHANNEL, -55V, -12A, 175 MOHM, 12.7 NC QG, D2-PAK

***Components: MOSFET P-Channel 55V 12A D2PAK

***i-Key: MOSFET P-CH 55V 12A D2PAK

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-12A; On Resistance, Rds(on):175mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

***nell: MOSFET, P, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:55V; Current, Id Cont:12A; Resistance, Rds On:0.175ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:-4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:48A; External Depth:15.49mm; External Length / Height:4.69mm; Power Dissipation:45W; Power Dissipation on 1 Sq. PCB:3.8W; Power, Pd:45W; SMD Marking:F9Z24NS; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:55V; Width, External:10.54mm

***ment14 APAC: MOSFET, P, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:55V; On Resistance Rds(on):175mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:45W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:-12A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:48A; SMD Marking:F9Z24NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRF9Z24NSPBF DISTI # IRF9Z24NSPBF-ND	Infineon Technologies AG	MOSFET P-CH 55V 12A D2PAK RoHS: Compliant Min Qty: 1 Container: Tube	Limited Supply - Call
IRF9Z24NSPBF DISTI # IRF9Z24NSPBF	Infineon Technologies AG	Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: IRF9Z24NSPBF) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 27
IRF9Z24NSPBF DISTI # 97K2242	Infineon Technologies AG	MOSFET Transistor, P Channel, 12 A, 55 V, 175 mohm, -10 V, -4 V RoHS Compliant: Yes	0
IRF9Z24NSPBF	International Rectifier	Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	26	1000:$0.6100 500:$0.6400 100:$0.6600 25:$0.6900 1:$0.7500
IRF9Z24NSPBF DISTI # 942-IRF9Z24NSPBF	Infineon Technologies AG	MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC RoHS: Compliant	0
IRF9Z24NSPBF	International Rectifier		89	2:$2.6880 11:$1.7472 30:$1.3440
IRF9Z24NSPBF	International Rectifier		71	11:$1.8000 4:$2.4000 1:$3.6000
IRF9Z24NSPBF DISTI # 9103180	Infineon Technologies AG	MOSFET, P, D2-PAK RoHS: Compliant	0	1:$2.4300 10:$2.1700 100:$1.6900 500:$1.4000

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IRF9Z24PBF OMO.#: OMO-IRF9Z24PBF	MOSFET P-CH -60V HEXFET MOSFET
	Mfr.#: IRF9Z24SPBF OMO.#: OMO-IRF9Z24SPBF-VISHAY	MOSFET P-CH 60V 11A D2PAK
	Mfr.#: IRF9Z24NPBF OMO.#: OMO-IRF9Z24NPBF-INFINEON-TECHNOLOGIES	MOSFET P-CH 55V 12A TO-220AB
	Mfr.#: IRF9Z24NPBF , 2SK1060-Z- OMO.#: OMO-IRF9Z24NPBF-2SK1060-Z--1190	Neu und Original
	Mfr.#: IRF9Z24NPBF,F9Z24N,IRF9Z OMO.#: OMO-IRF9Z24NPBF-F9Z24N-IRF9Z-1190	Neu und Original
	Mfr.#: IRF9Z24NPBF-MEX OMO.#: OMO-IRF9Z24NPBF-MEX-1190	Neu und Original
	Mfr.#: IRF9Z24NS OMO.#: OMO-IRF9Z24NS-INFINEON-TECHNOLOGIES	MOSFET P-CH 55V 12A D2PAK
	Mfr.#: IRF9Z24NSTRR OMO.#: OMO-IRF9Z24NSTRR-INFINEON-TECHNOLOGIES	MOSFET P-CH 55V 12A D2PAK
	Mfr.#: IRF9Z24S OMO.#: OMO-IRF9Z24S-VISHAY	MOSFET P-CH 60V 11A D2PAK
	Mfr.#: IRF9Z24 OMO.#: OMO-IRF9Z24-VISHAY	MOSFET P-Chan 60V 11 Amp

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von IRF9Z24NSPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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IRF9Z24NSPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes