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SQJ912AEP-T1_GE3

SQJ912AEP-T1_GE3
Mfr. #:
SQJ912AEP-T1_GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 40V 30A 48W AEC-Q101 Qualified
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SQJ912AEP-T1_GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ912AEP-T1_GE3 DatasheetSQJ912AEP-T1_GE3 Datasheet (P4-P6)SQJ912AEP-T1_GE3 Datasheet (P7-P9)SQJ912AEP-T1_GE3 Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
SQJ912AEP-T1_GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8L-4
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
7.7 mOhms, 7.7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
38 nC, 38 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
48 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
6.15 mm
Serie:
SQ
Transistortyp:
2 N-Channel
Breite:
5.13 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
58 S, 58 S
Abfallzeit:
11 ns, 11 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns, 9 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns, 23 ns
Typische Einschaltverzögerungszeit:
10 ns, 10 ns
Gewichtseinheit:
0.017870 oz
Tags
SQJ912A, SQJ912, SQJ91, SQJ9, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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SQJ912AEP Series 30 V 30 A Automotive Dual N-Channel Mosfet - PowerPAK® SO-8L
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DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0077Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: No
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Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
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MOSFET N-CH 40V 35A PPAK 1212-8 / Trans MOSFET N-CH 40V 17.6A 8-Pin PowerPAK 1212 T/R
***ment14 APAC
MOSFET,N CH,40V,35A,POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:3.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:17.6A; Power Dissipation Pd:3.8W; Voltage Vgs Max:20V
*** Source Electronics
Trans MOSFET P-CH 40V 14A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 40V 14A TO252 DPAK
***ark
Mosfet, P-Ch, 40V, 35A, To-252 Rohs Compliant: Yes |Diodes Inc. DMP4015SK3Q-13
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DMP4015SK3Q Series 40 V 14 A P-Channel Enhancement Mode Mosfet - TO-252 (DPAK)
***nsix Microsemi
Power Field-Effect Transistor, 12A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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SIRA18DP-T1-GE3 N-channel MOSFET Transistor; 15.5 A; 30 V; 8-Pin PowerPAK SO
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MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
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Single N-Channel 30 V 8.5 mOhm 14 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
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MOSFET, 30V, 15A, 8.5 MOHM, 9.3 NC QG, PQFN
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Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R - Tape and Reel
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MOSFET, N-CH, 30V, 15A, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:15mA; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V; Voltage Vgs th Min:1.35V
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P-Channel 30 V 7.5 mOhm 126.2 nC SMT Enhancement Mode Mosfet - PowerDI
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SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Teil # Mfg. Beschreibung Aktie Preis
SQJ912AEP-T1-GE3
DISTI # V72:2272_09219249		Vishay IntertechnologiesDUAL N-CHANNEL 40-V (D-S) 175C
RoHS: Compliant		2986
  • 1000:$0.4635
  • 500:$0.6041
  • 250:$0.6645
  • 100:$0.7383
  • 25:$0.8634
  • 10:$1.0553
  • 1:$1.2733
SQJ912AEP-T1-GE3
DISTI # V36:1790_09219249		Vishay IntertechnologiesDUAL N-CHANNEL 40-V (D-S) 175C
RoHS: Compliant		0
  • 3000000:$0.4581
  • 1500000:$0.4583
  • 300000:$0.4708
  • 30000:$0.4907
  • 3000:$0.4939
SQJ912AEP-T1_GE3
DISTI # SQJ912AEP-T1_GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 40V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5345In Stock
  • 1000:$0.5451
  • 500:$0.6904
  • 100:$0.8358
  • 10:$1.0720
  • 1:$1.2000
SQJ912AEP-T1_GE3
DISTI # SQJ912AEP-T1_GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 40V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5345In Stock
  • 1000:$0.5451
  • 500:$0.6904
  • 100:$0.8358
  • 10:$1.0720
  • 1:$1.2000
SQJ912AEP-T1_GE3
DISTI # SQJ912AEP-T1_GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 40V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.4516
  • 6000:$0.4692
  • 3000:$0.4939
SQJ912AEP-T1-GE3
DISTI # 31686249		Vishay IntertechnologiesDUAL N-CHANNEL 40-V (D-S) 175C
RoHS: Compliant		2986
  • 14:$1.2733
SQJ912AEP-T1_GE3
DISTI # SQJ912AEP-T1_GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 30A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ912AEP-T1_GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 18000
  • 30000:$0.4148
  • 18000:$0.4253
  • 12000:$0.4364
  • 6000:$0.4480
  • 3000:$0.4603
SQJ912AEP-T1_GE3
DISTI # SQJ912AEP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 30A 8-Pin PowerPAK SO T/R (Alt: SQJ912AEP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.4609
  • 18000:€0.4819
  • 12000:€0.5449
  • 6000:€0.6719
  • 3000:€0.9369
SQJ912AEP-T1_GE3.
DISTI # 23AC9821		Vishay IntertechnologiesTransistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:48W,No. of Pins:8Pins RoHS Compliant: No18000
  • 30000:$0.4310
  • 18000:$0.4430
  • 12000:$0.4560
  • 6000:$0.4750
  • 1:$0.4890
SQJ912AEP-T1_GE3
DISTI # 78-SQJ912AEP-T1_GE3		Vishay IntertechnologiesMOSFET 40V 30A 48W AEC-Q101 Qualified
RoHS: Compliant		4187
  • 1:$1.1700
  • 10:$0.9670
  • 100:$0.7420
  • 500:$0.6380
  • 1000:$0.5030
  • 3000:$0.4700
  • 6000:$0.4460
  • 9000:$0.4370
SQJ912AEP-T1-GE3
DISTI # 78-SQJ912AEP-T1-GE3		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3
RoHS: Compliant		0
    SQJ912AEP-T1-GE3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ912AEP-T1_GE3
    RoHS: Compliant    		Americas -
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von SQJ912AEP-T1_GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,17 $
      1,17 $
      10
      0,97 $
      9,67 $
      100
      0,74 $
      74,20 $
      500
      0,64 $
      319,00 $
      1000
      0,50 $
      503,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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