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NTHL080N120SC1

NTHL080N120SC1
Mfr. #:
NTHL080N120SC1
Hersteller:
ON Semiconductor
Beschreibung:
SIC MOS TO247 80MW 1200V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NTHL080N120SC1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
NTHL080N120SC1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
NTHL0, NTHL, NTH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
NxHL080N120SC1 N-Channel SiC MOSFETs
ON Semiconductor NxHL080N120SC1 N-Channel SiC MOSFETs are 1200V, 80mΩ MOSFETs that provide superior switching performance and high reliability. These MOSFETs offer low ON resistance and come in compact chip size that ensures low capacitance and low gate charge. The NxHL080N120SC1 MOSFETs feature high efficiency, fast operation frequency, high-speed switching, increased power density, reduced EMI, and reduced system size. These MOSFETs come in TO247-3L package. The NVHL080N120SC1 MOSFET is qualified for automotive grade according to AEC-Q101 certification.
Teil # Mfg. Beschreibung Aktie Preis
NTHL080N120SC1
DISTI # 33655949		ON SemiconductorSIC MOS TO247 80MW 1200V450
  • 450:$20.8800
NTHL080N120SC1
DISTI # NTHL080N120SC1OS-ND		ON SemiconductorSIC MOS TO247 80MW 1200V
RoHS: Compliant
Min Qty: 1
Container: Tube		345In Stock
  • 450:$13.0200
  • 25:$15.5400
  • 10:$16.2120
  • 1:$17.6400
NTHL080N120SC1
DISTI # V99:2348_23149775		ON SemiconductorSIC MOS TO247 80MW 1200V0
  • 225000:$10.0200
  • 45000:$11.2700
  • 4500:$14.0500
  • 450:$14.5500
NTHL080N120SC1
DISTI # V36:1790_23149775		ON SemiconductorSIC MOS TO247 80MW 1200V0
  • 450000:$9.3190
  • 225000:$9.3260
  • 45000:$10.7400
  • 4500:$13.9600
  • 450:$14.5500
NTHL080N120SC1
DISTI # NTHL080N120SC1		ON SemiconductorN‐Channel Silicon Carbide MOSFET 1200V 3-Pin TO-247 (Alt: NTHL080N120SC1)
RoHS: Compliant
Min Qty: 1		Europe - 450
  • 1000:€9.3900
  • 500:€10.0900
  • 100:€10.4900
  • 50:€10.8900
  • 25:€11.2900
  • 10:€11.7900
  • 1:€12.8900
NTHL080N120SC1
DISTI # NTHL080N120SC1		ON SemiconductorN‐Channel Silicon Carbide MOSFET 1200V 3-Pin TO-247 - Rail/Tube (Alt: NTHL080N120SC1)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$9.7900
  • 2250:$10.0900
  • 1350:$10.1900
  • 900:$10.2900
  • 450:$10.3900
NTHL080N120SC1
DISTI # 99AC9408		ON SemiconductorMOSFET, N-CH, 44A, 1.2KV, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.08ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes432
  • 500:$11.7200
  • 250:$12.5200
  • 100:$13.1700
  • 50:$14.0600
  • 25:$14.9500
  • 10:$15.5900
  • 1:$16.9600
NTHL080N120SC1ON Semiconductor 
RoHS: Compliant		450Tube
  • 450:$10.0000
NTHL080N120SC1
DISTI # 863-NTHL080N120SC1		ON SemiconductorMOSFET SIC MOS 80MW 1200V
RoHS: Compliant		275
  • 1:$16.7900
  • 10:$15.4400
  • 25:$14.8000
  • 100:$13.0400
  • 250:$12.4000
  • 500:$11.6000
NTHL080N120SC1
DISTI # 3018953		ON SemiconductorMOSFET, N-CH, 44A, 1.2KV, TO-247
RoHS: Compliant		432
  • 250:$15.1200
  • 100:$16.9700
  • 50:$17.9800
  • 10:$18.9600
  • 5:$21.3700
  • 1:$22.0200
NTHL080N120SC1
DISTI # XSFP00000177130		ON SEMICONDUCTOR 
RoHS: Compliant		900 in Stock0 on Order
  • 900:$13.3300
  • 450:$14.2900
NTHL080N120SC1
DISTI # XSKDRABV0051346		ON SEMICONDUCTOR 
RoHS: Compliant		360 in Stock0 on Order
  • 360:$14.9300
  • 30:$16.0000
NTHL080N120SC1
DISTI # XSKDRABS0034826		ON SEMICONDUCTOR 
RoHS: Compliant		1350 in Stock0 on Order
  • 1350:$14.3900
  • 450:$15.4200
NTHL080N120SC1
DISTI # 3018953		ON SemiconductorMOSFET, N-CH, 44A, 1.2KV, TO-247432
  • 100:£11.1000
  • 50:£11.6200
  • 10:£12.1300
  • 5:£13.5400
  • 1:£13.8300
Bild Teil # Beschreibung
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1

 MOSFET SIC MOS 80MW 1200V
NTHL080N120SC1

Mfr.#: NTHL080N120SC1

OMO.#: OMO-NTHL080N120SC1-ON-SEMICONDUCTOR

 SIC MOS TO247 80MW 1200V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von NTHL080N120SC1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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Stückpreis
ext. Preis
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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