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FDMC8622

FDMC8622
Mfr. #:
FDMC8622
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 100V N-Channel PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMC8622 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDMC8622 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-33-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
16 A
Rds On - Drain-Source-Widerstand:
56 mOhms
Qg - Gate-Ladung:
3 nC, 5.2 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
31 W
Aufbau:
Single
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMC8622
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
8.9 S
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.007055 oz
Tags
FDMC862, FDMC86, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Shielded Gate Power Trench® MOSFET 100V, 16A, 56mΩ
***ure Electronics
Single N-Channel 100 V 98 mOhm 7.3 nC 2.3 W PowerTrench SMT Mosfet - MLP-3.3x3.3
***r Electronics
Power Field-Effect Transistor, 4A I(D), 100V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N CH, 100V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0437ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
Fairchild PowerTrench MOSFETs
FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs
ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Teil # Mfg. Beschreibung Aktie Preis
FDMC8622
DISTI # V72:2272_06337913		ON SemiconductorTrans MOSFET N-CH Si 100V 4A 8-Pin MLP EP T/R0
    FDMC8622
    DISTI # V36:1790_06337913    		ON SemiconductorTrans MOSFET N-CH Si 100V 4A 8-Pin MLP EP T/R0
    • 3000000:$0.4659
    • 1500000:$0.4663
    • 300000:$0.5042
    • 30000:$0.5758
    • 3000:$0.5880
    FDMC8622
    DISTI # FDMC8622CT-ND    		ON SemiconductorMOSFET N-CH 100V 4A POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		40In Stock
    • 1000:$0.6489
    • 500:$0.8219
    • 100:$0.9950
    • 10:$1.2760
    • 1:$1.4300
    FDMC8622
    DISTI # FDMC8622DKR-ND    		ON SemiconductorMOSFET N-CH 100V 4A POWER33
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		40In Stock
    • 1000:$0.6489
    • 500:$0.8219
    • 100:$0.9950
    • 10:$1.2760
    • 1:$1.4300
    FDMC8622
    DISTI # FDMC8622TR-ND    		ON SemiconductorMOSFET N-CH 100V 4A POWER33
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 15000:$0.5376
    • 6000:$0.5586
    • 3000:$0.5880
    FDMC8622
    DISTI # FDMC8622    		ON SemiconductorTrans MOSFET N-CH 100V 4A 8-Pin Power 33 T/R (Alt: FDMC8622)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.4959
    • 18000:€0.5349
    • 12000:€0.5789
    • 6000:€0.6319
    • 3000:€0.7719
    FDMC8622
    DISTI # FDMC8622    		ON SemiconductorTrans MOSFET N-CH 100V 4A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC8622)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.4929
    • 18000:$0.5059
    • 12000:$0.5119
    • 6000:$0.5189
    • 3000:$0.5219
    FDMC8622
    DISTI # 27T6432    		ON SemiconductorFET 100V 56.0 MOHM MLP33 / REEL0
    • 30000:$0.5080
    • 18000:$0.5200
    • 12000:$0.5400
    • 6000:$0.6000
    • 3000:$0.6600
    • 1:$0.6880
    FDMC8622
    DISTI # 88T3280    		ON SemiconductorMOSFET, N CHANNEL, 100V, 16A, MLP 3.3X3.3,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0437ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.9V RoHS Compliant: Yes1807
    • 1000:$0.6060
    • 500:$0.7690
    • 250:$0.8190
    • 100:$0.8700
    • 50:$0.9570
    • 25:$1.0400
    • 10:$1.1300
    • 1:$1.3200
    FDMC8622
    DISTI # 512-FDMC8622    		ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
    RoHS: Compliant    		0
    • 1:$1.3100
    • 10:$1.1200
    • 100:$0.8610
    • 500:$0.7610
    • 1000:$0.6000
    • 3000:$0.5320
    • 9000:$0.5130
    FDMC8622
    DISTI # 2083268    		ON SemiconductorMOSFET, N CH, 100V, 16A, MLP 3.3X3.32422
    • 500:£0.5520
    • 250:£0.5880
    • 100:£0.6240
    • 25:£0.8110
    • 5:£0.9450
    FDMC8622
    DISTI # 2083268    		ON SemiconductorMOSFET, N CH, 100V, 16A, MLP 3.3X3.3
    RoHS: Compliant    		1807
    • 9000:$0.7890
    • 3000:$0.8190
    • 1000:$0.9230
    • 500:$1.1800
    • 100:$1.3300
    • 10:$1.7300
    • 1:$2.0100
    Bild Teil # Beschreibung
    ESDS312DBVR

    Mfr.#: ESDS312DBVR

    OMO.#: OMO-ESDS312DBVR

    		 TVS Diodes / ESD Suppressors 3.6V Data-Line Surge and 30kV ESD Protection Diode Array 5-SOT-23 -40 to 125
    CSD18543Q3A

    Mfr.#: CSD18543Q3A

    OMO.#: OMO-CSD18543Q3A

    		 MOSFET 60V, N ch NexFET MOSFETG , single SON3x3, 9.9mOhm 8-VSONP -55 to 150
    SI3459-B02-IM

    Mfr.#: SI3459-B02-IM

    OMO.#: OMO-SI3459-B02-IM

    		 Power Switch ICs - POE / LAN OCTAL 802.3Aat POE PSE Controller
    G6DN-1A DC12

    Mfr.#: G6DN-1A DC12

    OMO.#: OMO-G6DN-1A-DC12

    		 General Purpose Relays 1 Form A w/ 12VDC 5A, EN61010-2-201
    22201C106MAT2A

    Mfr.#: 22201C106MAT2A

    OMO.#: OMO-22201C106MAT2A

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100V 10uF X7R 2220 20% Tol HIGH CV
    SI3459-B02-IM

    Mfr.#: SI3459-B02-IM

    OMO.#: OMO-SI3459-B02-IM-SILICON-LABS

    		 IC POE PSE 8 PORT 802.3AT 56QFN
    ABM8AIG-25.000MHZ-12-2Z-T3

    Mfr.#: ABM8AIG-25.000MHZ-12-2Z-T3

    OMO.#: OMO-ABM8AIG-25-000MHZ-12-2Z-T3-ABRACON

    		 CRYSTAL 25MHZ 12PF SMD
    ESDS312DBVR

    Mfr.#: ESDS312DBVR

    OMO.#: OMO-ESDS312DBVR-TEXAS-INSTRUMENTS

    		 FAMILY OF UNI-DIRECTIONAL SURGE
    SKRKAEE020

    Mfr.#: SKRKAEE020

    OMO.#: OMO-SKRKAEE020-1190

    		 SMT PUSH BUTTON - Tape and Reel (Alt: SKRKAEE020)
    22201C106MAT2A

    Mfr.#: 22201C106MAT2A

    OMO.#: OMO-22201C106MAT2A-AVX

    		 Cap Ceramic 10uF 100V X7R 20% Pad SMD 2220 125C T/R
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von FDMC8622 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,31 $
    1,31 $
    10
    1,12 $
    11,20 $
    100
    0,86 $
    86,10 $
    500
    0,76 $
    380,50 $
    1000
    0,60 $
    600,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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