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NGTG25N120FL2WG

NGTG25N120FL2WG
Mfr. #:
NGTG25N120FL2WG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 1200V/25 FAST IGBT ONLY F
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTG25N120FL2WG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTG25N120FL2WG DatasheetNGTG25N120FL2WG Datasheet (P4-P6)NGTG25N120FL2WG Datasheet (P7-P9)NGTG25N120FL2WG Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Verpackung:
Rohr
Marke:
ON Semiconductor
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
0.241847 oz
Tags
NGTG, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***ark
1200V/25 Fast Igbt Only Fsii To-247 / Tube
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/25 FAST IGBT FSII T
***i-Key
IGBT FIELD STOP 1200V 50A TO247
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
***ical
Trans IGBT Chip N-CH 1200V 50A 179000mW 3-Pin(3+Tab) TO-247AD Tube
*** Source Electronics
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS | IGBT 1200V 50A 179W TO247
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
***el Electronic
IGBT Transistors IGBT & Power Bipolar
***i-Key
IGBT H-SERIES 1200V 25A TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***et
Trans IGBT Chip N-CH 1200V 50A 3-Pin TO-247AD Tube
***or
IGBT W/ULTRA-LOW VF DIODE FOR IN
*** Electronic Components
IGBT 1200V 50A 179W TO247AD
***el Electronic
CONN SWH RCPT STR 50 OHM SMD
***ark
IGBT TO-247, TUBE
***p One Stop Global
Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC
***ineon SCT
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***icroelectronics
30 A, 1200 V short circuit rugged IGBT with Ultrafast diode
***et
Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247
*** Electronic Components
IGBT Transistors 30A 1200V short circuit rugged IGBT
Teil # Mfg. Beschreibung Aktie Preis
NGTG25N120FL2WG
DISTI # 29035659		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		180
  • 1000:$2.2330
  • 500:$2.4905
  • 250:$2.7710
  • 180:$2.9240
NGTG25N120FL2WG
DISTI # NGTG25N120FL2WG-ND		ON SemiconductorIGBT 1200V 25A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		90In Stock
  • 1020:$2.7104
  • 510:$3.1909
  • 120:$3.7268
  • 30:$4.2813
  • 1:$5.0200
NGTG25N120FL2WG
DISTI # NGTG25N120FL2WG		ON SemiconductorTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTG25N120FL2WG)
RoHS: Compliant
Min Qty: 180
Container: Tube		Americas - 0
  • 180:$2.2900
  • 240:$2.1900
  • 420:$2.1900
  • 900:$2.1900
  • 1800:$2.0900
NGTG25N120FL2WGON Semiconductor 
RoHS: Not Compliant		32220
  • 1000:$2.8800
  • 500:$3.0300
  • 100:$3.1600
  • 25:$3.2900
  • 1:$3.5500
NGTG25N120FL2WG
DISTI # 863-NGTG25N120FL2WG		ON SemiconductorIGBT Transistors 1200V/25 FAST IGBT ONLY F
RoHS: Compliant		180
  • 1:$4.6600
  • 10:$3.9600
  • 100:$3.4400
  • 250:$3.2600
  • 500:$2.9300
  • 1000:$2.4700
  • 2500:$2.3500
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Verfügbarkeit
Aktie:
60
Auf Bestellung:
2043
Menge eingeben:
Der aktuelle Preis von NGTG25N120FL2WG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,66 $
4,66 $
10
3,96 $
39,60 $
100
3,44 $
344,00 $
250
3,26 $
815,00 $
500
2,93 $
1 465,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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