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FQAF13N80

FQAF13N80
Mfr. #:
FQAF13N80
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 800V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQAF13N80 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-3PF-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
8 A
Rds On - Drain-Source-Widerstand:
750 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
120 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
QFET
Verpackung:
Rohr
Höhe:
26.7 mm
Länge:
15.7 mm
Serie:
FQAF13N80
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
5.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
10.5 S
Abfallzeit:
110 ns
Produktart:
MOSFET
Anstiegszeit:
150 ns
Werkspackungsmenge:
360
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
155 ns
Typische Einschaltverzögerungszeit:
60 ns
Teil # Aliase:
FQAF13N80_NL
Gewichtseinheit:
0.245577 oz
Tags
FQAF13, FQAF1, FQAF, FQA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 800V, 8A, 750mΩ, TO-3PF
***ure Electronics
N-Channel 800 V 0.75 Ohm Through Hole Mosfet - TO-3PF
***et Europe
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-3PF Rail
***nell
MOSFET, N-CH, 800V, 8A, 150DEG C, 120W; Available until stocks are exhausted Alternative available
*** Stop Electro
Power Field-Effect Transistor, 8A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***S
French Electronic Distributor since 1988
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQAF13N80
DISTI # FQAF13N80-ND		ON SemiconductorMOSFET N-CH 800V 8A TO-3PF
RoHS: Compliant
Min Qty: 1
Container: Tube		70In Stock
  • 2520:$2.3407
  • 720:$2.9214
  • 360:$3.2558
  • 25:$3.9596
  • 10:$4.1890
  • 1:$4.6600
FQAF13N80
DISTI # FQAF13N80		ON SemiconductorTrans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-3PF Rail - Bulk (Alt: FQAF13N80)
Min Qty: 134
Container: Bulk		Americas - 0
  • 402:$2.2900
  • 670:$2.2900
  • 1340:$2.2900
  • 134:$2.3900
  • 268:$2.3900
FQAF13N80
DISTI # FQAF13N80		ON SemiconductorTrans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-3PF Rail (Alt: FQAF13N80)
RoHS: Compliant
Min Qty: 360		Asia - 0
  • 18000:$2.3893
  • 9000:$2.4292
  • 3600:$2.5129
  • 1800:$2.6027
  • 1080:$2.6991
  • 720:$2.8029
  • 360:$2.9150
FQAF13N80
DISTI # FQAF13N80		ON SemiconductorTrans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-3PF Rail - Rail/Tube (Alt: FQAF13N80)
RoHS: Compliant
Min Qty: 360
Container: Tube		Americas - 0
  • 3600:$1.6900
  • 720:$1.7900
  • 1440:$1.7900
  • 2160:$1.7900
  • 360:$1.8900
FQAF13N80
DISTI # 82C3861		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,8A I(D),TO-247VAR ROHS COMPLIANT: YES0
  • 10000:$2.3800
  • 2500:$2.5200
  • 1000:$2.6400
  • 500:$3.1000
  • 100:$3.4400
  • 10:$4.1500
  • 1:$5.1300
FQAF13N80
DISTI # 512-FQAF13N80		ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant		322
  • 1:$4.4300
  • 10:$3.7700
  • 100:$3.2600
  • 250:$3.1000
  • 500:$2.7800
  • 1000:$2.3400
  • 2500:$2.2200
FQAF13N80ON SemiconductorPower Field-Effect Transistor, 8A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		260
  • 1000:$2.1300
  • 500:$2.2400
  • 100:$2.3400
  • 25:$2.4400
  • 1:$2.6200
FQAF13N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		130
  • 1000:$2.1300
  • 500:$2.2400
  • 100:$2.3400
  • 25:$2.4400
  • 1:$2.6200
FQAF13N80Fairchild Semiconductor Corporation 250
    FQAF13N80
    DISTI # 6714982    		ON SemiconductorMOSFET N-CHANNEL 800V 8A TO-3PF, EA26
    • 250:£2.1700
    • 50:£2.4800
    • 20:£2.5600
    • 10:£2.6400
    • 1:£3.7200
    FQAF13N80
    DISTI # 6714982P    		ON SemiconductorMOSFET N-CHANNEL 800V 8A TO-3PF, TU118
    • 250:£2.1700
    • 50:£2.4800
    • 20:£2.5600
    • 10:£2.6400
    FQAF13N80Fairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		343
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      Verfügbarkeit
      Aktie:
      322
      Auf Bestellung:
      2305
      Menge eingeben:
      Der aktuelle Preis von FQAF13N80 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      4,43 $
      4,43 $
      10
      3,77 $
      37,70 $
      100
      3,26 $
      326,00 $
      250
      3,10 $
      775,00 $
      500
      2,78 $
      1 390,00 $
      1000
      2,34 $
      2 340,00 $
      2500
      2,22 $
      5 550,00 $
      5000
      2,14 $
      10 700,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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