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AS4C32M16D1-5BANTR

AS4C32M16D1-5BANTR
Mfr. #:
AS4C32M16D1-5BANTR
Hersteller:
Alliance Memory
Beschreibung:
DRAM 512M 2.5V 200MHz 32Mx16 DDR1 A-Temp
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AS4C32M16D1-5BANTR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
AS4C32M16D1-5BANTR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Allianzgedächtnis
Produktkategorie:
DRAM
RoHS:
Y
Typ:
SDRAM - DDR1
Datenbusbreite:
16 bit
Organisation:
32 M x 16
Paket / Koffer:
FBGA-60
Speichergröße:
512 Mbit
Maximale Taktfrequenz:
200 MHz
Zugriffszeit:
0.7 ns
Versorgungsspannung - Max.:
2.7 V
Versorgungsspannung - Min.:
2.3 V
Versorgungsstrom - Max.:
108 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 105 C
Serie:
AS4C32M16D1
Verpackung:
Spule
Marke:
Allianzgedächtnis
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Produktart:
DRAM
Werkspackungsmenge:
2500
Unterkategorie:
Speicher & Datenspeicherung
Tags
AS4C32M16D1-5B, AS4C32M16D1-5, AS4C32M16D1, AS4C32M16D, AS4C32M1, AS4C3, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von AS4C32M16D1-5BANTR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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