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FDG312P

FDG312P
Mfr. #:
FDG312P
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET SC70-6 P-CH -20V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDG312P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-323-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
1.2 A
Rds On - Drain-Source-Widerstand:
135 mOhms
Vgs - Gate-Source-Spannung:
8 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
750 mW
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
2 mm
Produkt:
MOSFET Kleinsignal
Serie:
FDG312P
Transistortyp:
1 P-Channel
Typ:
MOSFET
Breite:
1.25 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
3.8 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
16 ns
Typische Einschaltverzögerungszeit:
7 ns
Teil # Aliase:
FDG312P_NL
Gewichtseinheit:
0.000988 oz
Tags
FDG312P, FDG312, FDG31, FDG3, FDG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ
***ment14 APAC
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V
***rchild Semiconductor
This P-Channel MOSFET is produced using 's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
Teil # Mfg. Beschreibung Aktie Preis
FDG312P
DISTI # V72:2272_06300671		ON Semiconductor20V P-FET 180 MO SC70-66000
  • 6000:$0.1146
  • 3000:$0.1273
  • 1000:$0.1456
  • 500:$0.1669
  • 250:$0.1854
  • 100:$0.1928
  • 25:$0.3131
  • 10:$0.3480
  • 1:$0.4284
FDG312P
DISTI # V79:2366_18324572		ON Semiconductor20V P-FET 180 MO SC70-6218
  • 1000:$0.1492
  • 500:$0.1736
  • 100:$0.1928
  • 10:$0.3480
  • 1:$0.4284
FDG312P
DISTI # V36:1790_06300671		ON Semiconductor20V P-FET 180 MO SC70-60
  • 3000000:$0.1398
  • 1500000:$0.1399
  • 300000:$0.1438
  • 30000:$0.1489
  • 3000:$0.1497
FDG312P
DISTI # FDG312PCT-ND		ON SemiconductorMOSFET P-CH 20V 1.2A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3148In Stock
  • 1000:$0.1691
  • 500:$0.2189
  • 100:$0.2786
  • 10:$0.3730
  • 1:$0.4400
FDG312P
DISTI # FDG312PDKR-ND		ON SemiconductorMOSFET P-CH 20V 1.2A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3148In Stock
  • 1000:$0.1691
  • 500:$0.2189
  • 100:$0.2786
  • 10:$0.3730
  • 1:$0.4400
FDG312P
DISTI # FDG312PTR-ND		ON SemiconductorMOSFET P-CH 20V 1.2A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 75000:$0.1224
  • 30000:$0.1236
  • 15000:$0.1304
  • 6000:$0.1401
  • 3000:$0.1497
FDG312P
DISTI # 33699181		ON Semiconductor20V P-FET 180 MO SC70-69000
  • 3000:$0.0831
FDG312P
DISTI # 32449019		ON Semiconductor20V P-FET 180 MO SC70-66000
  • 63:$0.4284
FDG312P
DISTI # 30614627		ON Semiconductor20V P-FET 180 MO SC70-6249
  • 159:$0.1575
FDG312P
DISTI # 26121275		ON Semiconductor20V P-FET 180 MO SC70-6218
  • 116:$0.4284
FDG312P
DISTI # FDG312P		ON SemiconductorTrans MOSFET P-CH 20V 1.2A 6-Pin SC-70 T/R (Alt: FDG312P)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 6000
  • 30000:€0.0989
  • 18000:€0.1069
  • 12000:€0.1259
  • 6000:€0.1539
  • 3000:€0.1979
FDG312P
DISTI # FDG312P		ON SemiconductorTrans MOSFET P-CH 20V 1.2A 6-Pin SC-70 T/R - Tape and Reel (Alt: FDG312P)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.1479
  • 30000:$0.1509
  • 18000:$0.1529
  • 12000:$0.1549
  • 6000:$0.1559
FDG312P
DISTI # FDG312P		ON SemiconductorTrans MOSFET P-CH 20V 1.2A 6-Pin SC-70 T/R (Alt: FDG312P)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
  • 300000:$0.1311
  • 150000:$0.1333
  • 60000:$0.1379
  • 30000:$0.1429
  • 18000:$0.1482
  • 12000:$0.1538
  • 6000:$0.1600
FDG312P
DISTI # FDG312P		ON SemiconductorTrans MOSFET P-CH 20V 1.2A 6-Pin SC-70 T/R - Bulk (Alt: FDG312P)
RoHS: Compliant
Min Qty: 1924
Container: Bulk		Americas - 0
  • 19240:$0.1599
  • 9620:$0.1639
  • 5772:$0.1659
  • 3848:$0.1679
  • 1924:$0.1689
FDG312P
DISTI # 58K1442		ON SemiconductorP CHANNEL MOSFET, -20V, 1.2A, SC-70,Transistor Polarity:P Channel,Continuous Drain Current Id:1.2A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.135ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:900mV RoHS Compliant: Yes0
  • 1000:$0.1630
  • 500:$0.1780
  • 250:$0.1940
  • 100:$0.2090
  • 50:$0.2740
  • 25:$0.3390
  • 1:$0.4160
FDG312P
DISTI # 512-FDG312P		ON SemiconductorMOSFET SC70-6 P-CH -20V
RoHS: Compliant		6898
  • 1:$0.4100
  • 10:$0.3330
  • 100:$0.2030
  • 1000:$0.1570
  • 3000:$0.1340
  • 9000:$0.1250
  • 24000:$0.1180
  • 45000:$0.1150
FDG312PON SemiconductorP-Channel 20 V 180 mOhm 2.5V Specified PowerTrench Mosfet SC70-6
RoHS: Compliant		6000Reel
  • 3000:$0.1150
  • 6000:$0.1090
FDG312PFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		762375
  • 1000:$0.1700
  • 500:$0.1800
  • 100:$0.1900
  • 25:$0.2000
  • 1:$0.2100
FDG312PFairchild Semiconductor Corporation 2957
    FDG312PFairchild Semiconductor Corporation 12000
    • 9:$0.5625
    • 37:$0.3656
    • 138:$0.2109
    • 476:$0.1800
    • 1029:$0.1575
    • 2446:$0.1462
    FDG312P
    DISTI # 8063377P    		ON SemiconductorMOSFETFAIRCHILDFDG312P, RL5520
    • 2000:£0.1220
    • 1000:£0.1330
    • 200:£0.1530
    • 100:£0.1720
    FDG312P
    DISTI # 8063377    		ON SemiconductorMOSFETFAIRCHILDFDG312P, TA280
    • 2000:£0.1220
    • 1000:£0.1330
    • 200:£0.1530
    • 100:£0.1720
    • 20:£0.2820
    FDG312PFairchild Semiconductor Corporation 12569
      FDG312PFairchild Semiconductor CorporationMOSFET Transistor, P-Channel, TSOP3995
      • 1482:$0.1050
      • 297:$0.1350
      • 1:$0.3000
      FDG312PFreescale SemiconductorMOSFET Transistor, P-Channel, TSOP1756
      • 149:$0.2250
      • 18:$0.3375
      • 1:$0.7500
      FDG312PFreescale SemiconductorMOSFET Transistor, P-Channel, TSOP9600
      • 8001:$0.1650
      • 4104:$0.1875
      • 1:$0.7500
      FDG312P
      DISTI # FDG312P      		ON SemiconductorTransistor: P-MOSFET,unipolar,-20V,-1.2A,0.75W,SC70-62529
      • 3000:$0.1056
      • 500:$0.1137
      • 100:$0.1261
      • 25:$0.1573
      • 5:$0.1827
      FDG312PFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Not Compliant      		3000
        FDG312P
        DISTI # XSFP00000073955        		Fairchild Semiconductor CorporationP-Channel 20 V 180 mOhm 2.5V SpecifiedPowerTrenchMosfet SC70-6
        RoHS: Compliant        		6000 in Stock0 on Order
        • 6000:$0.1533
        • 3000:$0.1643
        FDG312P
        DISTI # 1611186        		ON SemiconductorMOSFET, P2975
        • 500:£0.1200
        • 250:£0.1370
        • 100:£0.1550
        • 25:£0.2760
        • 5:£0.2890
        FDG312P
        DISTI # 1611186RL        		ON SemiconductorMOSFET, P
        RoHS: Compliant        		0
        • 3000:$0.4860
        FDG312P
        DISTI # 1611186        		ON SemiconductorMOSFET, P
        RoHS: Compliant        		0
        • 3000:$0.4860
        Bild Teil # Beschreibung
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        OMO.#: OMO-B230A-13-F-DIODES

        		 DIODE SCHOTTKY 30V 2A SMA
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1989
        Menge eingeben:
        Der aktuelle Preis von FDG312P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,41 $
        0,41 $
        10
        0,33 $
        3,33 $
        100
        0,20 $
        20,30 $
        1000
        0,16 $
        157,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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