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SKM22GD123D

SKM22GD123D
Mfr. #:
SKM22GD123D
Hersteller:
SEMIKRON
Beschreibung:
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SKM22GD123D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SKM22G, SKM22, SKM2, SKM
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1.2KV 25A 12-Pin Case D-67
***ark
Igbt Module, 1.2Kv, 25A, Semitrans 6; Transistor Polarity:n Channel; Dc Collector Current:22A; Collector Emitter Saturation Voltage Vce(On):1.2Kv; Power Dissipation Pd:145W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Product Range:- Rohs Compliant: Yes
***nell
IGBT MODULE, 3-PHASE BRIDGE; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:25A; Voltage, Vce Sat Max:3V; Case Style:SEMITRANS 6; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic Continuous b Max:15A; Current Ic av:25A; Current, Icm Pulsed:25A; External Depth:45mm; External Length / Height:24mm; Fixing Centres:82mm; Fixing Hole Diameter:2.5mm; Power, Pd:145W; Power, Ptot:145W; Temperature, Current:25°C; Time, Rise:35ns; Transistors, No. of:6; Width, External:105mm
***ikron
not recommended for new design Features: MOS input (voltage controlled) N channel, homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting to 6 x I cnom Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (9 mm) and creepage distances (13 mm) Typical Applications: Switched mode power supplies Three phase inverters for AC motor speed control General power switching applications Pulse frequencies also above 15 kHz
Teil # Mfg. Beschreibung Aktie Preis
SKM 22GD123D
DISTI # 69K7649		SEMIKRONIGBT MODULE, 1.2KV, 25A, SEMITRANS 6,Transistor Polarity:N Channel,DC Collector Current:22A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:145W,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:- RoHS Compliant: Yes0
    SKM22GD123D
    DISTI # 9563008    		SEMIKRON 
    RoHS: Compliant    		0
    • 50:$249.9000
    • 20:$275.4000
    • 10:$280.5000
    • 5:$285.6000
    • 1:$300.9000
    SKM22GD123DSEMIKRONInsulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Not Compliant    		2
      Bild Teil # Beschreibung
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      Mfr.#: SKM224A

      OMO.#: OMO-SKM224A-1190

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      Mfr.#: SKM22GD101D

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      SKM22GD121D

      Mfr.#: SKM22GD121D

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      		 Neu und Original
      SKM22GD123D

      Mfr.#: SKM22GD123D

      OMO.#: OMO-SKM22GD123D-1190

      		 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von SKM22GD123D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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