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FDI038AN06A0

FDI038AN06A0
Mfr. #:
FDI038AN06A0
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 60V 80a 0.0038 Ohms/VGS=10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDI038AN06A0 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDI038AN06A0 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
3.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
310 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PowerTrench
Verpackung:
Rohr
Höhe:
7.88 mm
Länge:
10.29 mm
Serie:
FDI038AN06A0
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.83 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
60 ns
Produktart:
MOSFET
Anstiegszeit:
144 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
34 ns
Typische Einschaltverzögerungszeit:
17 ns
Teil # Aliase:
FDI038AN06A0_NL
Gewichtseinheit:
0.073511 oz
Tags
FDI038AN0, FDI038A, FDI038, FDI03, FDI0, FDI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
PowerTrench® MOSFET, N-Channel, 60V, 80A, 3.8mΩ
***ure Electronics
Single N-Channel 60 V 0.0078 Ohm 124 nC 310 W Through Hole Mosfet TO-262
***ter Electronics
TO262, SINGLE, NCH, 60V, 0.0038 ohm PowerTrench MOSFET
***ark
Mosfet, N-Ch, 60V, 80A, I2Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.0035Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Teil # Mfg. Beschreibung Aktie Preis
FDI038AN06A0
DISTI # V36:1790_06359327		ON SemiconductorDISCRETE AUTOMOTIVE N-CHANNEL0
  • 800000:$2.3090
  • 400000:$2.3110
  • 80000:$2.4300
  • 8000:$2.6190
  • 800:$2.6500
FDI038AN06A0
DISTI # FDI038AN06A0-ND		ON SemiconductorMOSFET N-CH 60V 80A TO-262AB
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$2.6497
FDI038AN06A0
DISTI # FDI038AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 17A 3-Pin(3+Tab) I2PAK Tube - Bulk (Alt: FDI038AN06A0)
RoHS: Compliant
Min Qty: 116
Container: Bulk		Americas - 0
  • 1160:$2.5900
  • 348:$2.6900
  • 580:$2.6900
  • 116:$2.7900
  • 232:$2.7900
FDI038AN06A0
DISTI # FDI038AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 17A 3-Pin(3+Tab) I2PAK Tube - Rail/Tube (Alt: FDI038AN06A0)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 3200:$2.3900
  • 4800:$2.3900
  • 8000:$2.3900
  • 800:$2.4900
  • 1600:$2.4900
FDI038AN06A0
DISTI # 512-FDI038AN06A0		ON SemiconductorMOSFET 60V 80a 0.0038 Ohms/VGS=10V
RoHS: Compliant		758
  • 1:$4.0200
  • 10:$3.4200
  • 100:$2.9600
  • 250:$2.8100
  • 500:$2.5200
  • 1000:$2.1200
  • 2500:$2.0200
FDI038AN06A0Fairchild Semiconductor CorporationPower Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
RoHS: Compliant		21454
  • 1000:$2.8400
  • 500:$2.9900
  • 100:$3.1200
  • 25:$3.2500
  • 1:$3.5000
FDI038AN06A0_NLFairchild Semiconductor CorporationPower Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
RoHS: Not Compliant		169
  • 1000:$3.4700
  • 500:$3.6600
  • 100:$3.8100
  • 25:$3.9700
  • 1:$4.2800
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 MOSFET N-Ch 650V 17.5A TO220FP CoolMOS CFD2
RBQ20BM65AFHTL

Mfr.#: RBQ20BM65AFHTL

OMO.#: OMO-RBQ20BM65AFHTL

 Schottky Diodes & Rectifiers 65V Vr 20A Io SBD TO-252(DPAK) 10A
STD4N62K3

Mfr.#: STD4N62K3

OMO.#: OMO-STD4N62K3

 MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3
STFH18N60M2

Mfr.#: STFH18N60M2

OMO.#: OMO-STFH18N60M2

 MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
VS-32CTQ030-M3

Mfr.#: VS-32CTQ030-M3

OMO.#: OMO-VS-32CTQ030-M3-VISHAY

 DIODE ARRAY SCHOTTKY 30V TO220AB
0217.800MXEP

Mfr.#: 0217.800MXEP

OMO.#: OMO-0217-800MXEP-LITTELFUSE

 Cartridge Fuses 250 V 0.8A 5x20mm Fast Acting
RBQ20BM65AFHTL

Mfr.#: RBQ20BM65AFHTL

OMO.#: OMO-RBQ20BM65AFHTL-ROHM-SEMI

 SCHOTTKY BARRIER DIODE (AEC-Q101
023503.5MXEP

Mfr.#: 023503.5MXEP

OMO.#: OMO-023503-5MXEP-LITTELFUSE

 Cartridge Fuses 250V 3.5A 5X20 PT FA UL LBC
Verfügbarkeit
Aktie:
758
Auf Bestellung:
2741
Menge eingeben:
Der aktuelle Preis von FDI038AN06A0 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,02 $
4,02 $
10
3,42 $
34,20 $
100
2,96 $
296,00 $
250
2,81 $
702,50 $
500
2,52 $
1 260,00 $
1000
2,12 $
2 120,00 $
2500
2,02 $
5 050,00 $
5000
1,94 $
9 700,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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