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STP2NK100Z

STP2NK100Z
Mfr. #:
STP2NK100Z
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Channel 1000V Zener SuperMESH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STP2NK100Z Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STP2NK100Z DatasheetSTP2NK100Z Datasheet (P4-P6)STP2NK100Z Datasheet (P7-P9)STP2NK100Z Datasheet (P10-P12)STP2NK100Z Datasheet (P13-P15)STP2NK100Z Datasheet (P16)
ECAD Model:
Mehr Informationen:
STP2NK100Z Mehr Informationen STP2NK100Z Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1 kV
Id - Kontinuierlicher Drainstrom:
2 A
Rds On - Drain-Source-Widerstand:
8.5 Ohms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
16 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
70 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperMESH
Verpackung:
Rohr
Höhe:
9.15 mm
Länge:
10.4 mm
Serie:
STP2NK100Z
Transistortyp:
1 N-Channel
Breite:
4.6 mm
Marke:
STMicroelectronics
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.011640 oz
Tags
STP2NK, STP2N, STP2, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in TO-220 package
***ure Electronics
N-Channel 1 kV 8.5 Ohm SuperMESH Power MosFet - TO-220
***ical
Trans MOSFET N-CH 1KV 1.85A 3-Pin(3+Tab) TO-220AB Tube
***ca Corp
Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N CH POWER MOSFET, SuperMESH, 1000V, 1.85A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:1.85A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:70W; MSL:- RoHS Compliant: Yes
***icroelectronics
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
***va Crawler
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 900V 2.1A 3-Pin(3+Tab) TO-220AB Tube
***enic
900V 2.1A 70W 6.5´Î@10V1.05A 4.5V@50Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.1A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 6.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
***r Electronics
Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-CHANNEL 800V - 3.8 Ohm - 2.5A TO-220 Zener-Protected SuperMESH™ Power MOSFET
***ical
Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220AB Tube
***ark
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:70W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 4.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220
*** Source Electronics
Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 900V 4A TO-220
***ure Electronics
N-Channel 900 V 4.2 O 22 nC Flange Mount QFET Mosfet - TO-220AB
***ment14 APAC
MOSFET, N-CH, 900V, 4A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Source Voltage Vds:900V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, TO-220; Transistor Polarity:N; Max Current Id:4.2A; Max Voltage Vds:900V; On State Resistance:3.3ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:140W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220; No. of Pins:3; SVHC:Cobalt dichloride; Case Style:TO-220; Cont Current Id:4.2A; Device Marking:FQP4N90; Max On State Resistance:3.3ohm; Max Voltage Vgs th:5V; Power Dissipation Pd:140W; Pulse Current Idm:16.8A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:900V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)
***ical
Trans MOSFET N-CH 800V 5.8A 3-Pin(3+Tab) TO-220AB Rail
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:158W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:5.8A; On State Resistance Max:1.95ohm; Package / Case:TO-220; Power Dissipation Pd:158W; Power Dissipation Pd:158W; Pulse Current Idm:23.2A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
***i-Key
MOSFET N-CH 900V 3.6A TO-220
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 4.25ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 5V; Power Dissipation Pd
***ark
MOSFET, N, TO-220; Transistor type:MOSFET; Current, Id cont:3.6A; Resistance, Rds on:4.25R; Case style:TO-220 (SOT-78B); Case style, alternate:SOT-78B; Current, Idm pulse:14.4A; Pins, No. of:3; Power dissipation:130W; Power, Pd:130W; RoHS Compliant: Yes
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Teil # Mfg. Beschreibung Aktie Preis
STP2NK100Z
DISTI # V99:2348_17730245		STMicroelectronicsTrans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		833
  • 5000:$1.2850
  • 2500:$1.2950
  • 500:$1.6710
  • 100:$1.9320
  • 50:$2.1640
  • 10:$2.4040
  • 1:$3.1086
STP2NK100Z
DISTI # V36:1790_06564677		STMicroelectronicsTrans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 5000:$1.2360
  • 2500:$1.2950
  • 500:$1.6710
  • 100:$1.9320
  • 50:$2.1640
  • 10:$2.4040
  • 1:$3.1086
STP2NK100Z
DISTI # 497-7518-5-ND		STMicroelectronicsMOSFET N-CH 1000V 1.85A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		16987In Stock
  • 5000:$1.3186
  • 2500:$1.3693
  • 500:$1.7750
  • 100:$2.1605
  • 50:$2.5358
  • 10:$2.6880
  • 1:$2.9900
STP2NK100Z
DISTI # 25957433		STMicroelectronicsTrans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		838
  • 5:$3.1086
STP2NK100Z
DISTI # STP2NK100Z		STMicroelectronicsTrans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220 Tube (Alt: STP2NK100Z)
RoHS: Compliant
Min Qty: 50
Container: Tube		Europe - 95
  • 500:€0.3419
  • 300:€0.3689
  • 200:€0.3999
  • 100:€0.4359
  • 50:€0.5329
STP2NK100Z
DISTI # STP2NK100Z		STMicroelectronicsTrans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP2NK100Z)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 6000:$1.1900
  • 10000:$1.1900
  • 2000:$1.2900
  • 4000:$1.2900
  • 1000:$1.3900
STP2NK100Z
DISTI # 511-STP2NK100Z		STMicroelectronicsMOSFET N-Channel 1000V Zener SuperMESH
RoHS: Compliant		1980
  • 1:$2.8500
  • 10:$2.4200
  • 100:$1.9400
  • 500:$1.7000
  • 1000:$1.4100
  • 2000:$1.3100
  • 5000:$1.2600
STP2NK100Z
DISTI # 7610095P		STMicroelectronicsMOSFET N-CHANNEL 1KV 2A TO220, TU395
  • 250:£1.4340
  • 100:£1.4940
  • 50:£1.6740
  • 10:£1.8560
STP2NK100Z
DISTI # STP2NK100Z		STMicroelectronicsN-Ch+Z-Dio 1000V 1,85A 70W 8,5R TO220
RoHS: Compliant		130
  • 10:€1.0500
  • 50:€0.7500
  • 200:€0.6000
  • 500:€0.5700
STP2NK100Z
DISTI # 2098314		STMicroelectronicsMOSFET, N CH, 1000V, 1.85A, TO 220
RoHS: Compliant		52
  • 5000:$1.9000
  • 2000:$1.9700
  • 1000:$2.1200
  • 500:$2.5600
  • 100:$2.9200
  • 10:$3.6500
  • 1:$4.2900
STP2NK100Z
DISTI # XSKDRABV0040344		STMicroelectronicsPower Field-EffectTransistor,26AI(D),100V,0.06ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB
RoHS: Compliant		2295 in Stock0 on Order
  • 2295:$0.5160
  • 1300:$0.5529
STP2NK100Z
DISTI # 2098314		STMicroelectronicsMOSFET, N CH, 1000V, 1.85A, TO 22052
  • 500:£1.2400
  • 250:£1.3700
  • 100:£1.4200
  • 25:£1.6100
  • 5:£1.8800
Bild Teil # Beschreibung
NE5532P

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Mfr.#: CS45-16IO1R

OMO.#: OMO-CS45-16IO1R

 SCRs 45 Amps 1600V
VUO86-16NO7

Mfr.#: VUO86-16NO7

OMO.#: OMO-VUO86-16NO7

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STRVS185X02B

Mfr.#: STRVS185X02B

OMO.#: OMO-STRVS185X02B-STMICROELECTRONICS

 TVS DIODE 128V 185V SMB
STRVS280X02F

Mfr.#: STRVS280X02F

OMO.#: OMO-STRVS280X02F-STMICROELECTRONICS

 TVS Diodes - Transient Voltage Suppressors Rep Volt Suppressor TVS 280V Ipp 2A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von STP2NK100Z dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,85 $
2,85 $
10
2,42 $
24,20 $
100
1,94 $
194,00 $
500
1,70 $
850,00 $
1000
1,41 $
1 410,00 $
2000
1,31 $
2 620,00 $
5000
1,26 $
6 300,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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