SI1539CDL-T1-GE3

Mfr. #:: SI1539CDL-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET -30V Vds 20V Vgs SC70-6 N&P PAIR
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI1539CDL-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI1539CDL-T1-GE3 Datasheet SI1539CDL-T1-GE3 Datasheet (P4-P6)SI1539CDL-T1-GE3 Datasheet (P7-P9)SI1539CDL-T1-GE3 Datasheet (P10-P12)SI1539CDL-T1-GE3 Datasheet (P13-P15)SI1539CDL-T1-GE3 Datasheet (P16)
ECAD Model:
Mehr Informationen:: SI1539CDL-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOT-363-6

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: N-Kanal, P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 700 mA, 500 mA

Rds On - Drain-Source-Widerstand:: 388 mOhms, 890 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.2 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 1.5 nC, 3 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 340 mW

Aufbau:: Dual

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SI1

Transistortyp:: 1 N-Channel, 1 P-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 1.2 S, 0.6 S

Abfallzeit:: 15 ns, 10 ns

Produktart:: MOSFET

Anstiegszeit:: 25 ns, 19 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 14 ns, 4 ns

Typische Einschaltverzögerungszeit:: 26 ns, 32 ns

Teil # Aliase:: SI1539CDL-GE3

Gewichtseinheit:: 0.000988 oz

Tags: SI1539C, SI153, SI15, SI1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1539CDL-T1-GE3 Bewertungen und Rezensionen

E**q

received in good working condition.

2019-03-21

M***a

All as in the description

2019-03-22

SI1539CDL-T1-GE3 Beschreibung

*** Source Electronics: Trans MOSFET N/P-CH 30V 0.7A/0.4A 6-Pin SC-70 T/R / MOSFET N/P-CH 30V SOT363

***ure Electronics: MOSFET 30 VOLTS 0.7 AMPS 0.34 WATTS

***mal: N-AND P-CHANNEL 30-V(D-S) MOSFET

***nell: MOSFET, NP CH, 30V, W DIODE, SOT363; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:340mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; Continuous Drain Current Id:700mA; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.323ohm; Power Dissipation Pd:340mW

SI1539CDL-T1-GE3 Mehr Informationen

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI1539CDL-T1-GE3 DISTI # SI1539CDL-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 30V SOT363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	139In Stock	1000:$0.1428 500:$0.1903 100:$0.2776 10:$0.4040 1:$0.5200
SI1539CDL-T1-GE3 DISTI # SI1539CDL-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 30V SOT363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	139In Stock	1000:$0.1428 500:$0.1903 100:$0.2776 10:$0.4040 1:$0.5200
SI1539CDL-T1-GE3 DISTI # SI1539CDL-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 30V SOT363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.1270
SI1539CDL-T1-GE3 DISTI # SI1539CDL-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 0.7A/0.4A 6-Pin SOT-363 T/R - Tape and Reel (Alt: SI1539CDL-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SI1539CDL-T1-GE3 DISTI # SI1539CDL-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 0.7A/0.4A 6-Pin SOT-363 T/R (Alt: SI1539CDL-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI1539CDL-T1-GE3 DISTI # 64T4054	Vishay Intertechnologies	Trans MOSFET N/P-CH 30V 0.7A/0.4A 6-Pin SOT-363 T/R - Product that comes on tape, but is not reeled (Alt: 64T4054) RoHS: Not Compliant Min Qty: 5 Container: Ammo Pack	Americas - 0	1:$0.6300 25:$0.5080 50:$0.4370 100:$0.3640 250:$0.3150 500:$0.2650 1000:$0.2110
SI1539CDL-T1-GE3 DISTI # 99W9595	Vishay Intertechnologies	Dual MOSFET, N and P Channel, 700 mA, 30 V, 0.323 ohm, 10 V, 1.2 V	0	1:$0.1030 3000:$0.1020 6000:$0.0970
SI1539CDL-T1-GE3 DISTI # 70AC6490	Vishay Intertechnologies		0	1:$0.5200 25:$0.4040 50:$0.3410 100:$0.2770 250:$0.2340 500:$0.1900 1000:$0.1420
SI1539CDL-T1-GE3 DISTI # 64T4054	Vishay Intertechnologies	MOSFET, NP CHANNEL, 30V, W DIODE, SOT363,Transistor Polarity:N and P Channel,Continuous Drain Current Id:700mA,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.323ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V , RoHS Compliant: Yes	4	1:$0.6300 25:$0.5080 50:$0.4370 100:$0.3640 250:$0.3150 500:$0.2650 1000:$0.2110
SI1539CDL-T1-GE3 DISTI # 70459654	Vishay Siliconix	30 Volts 0.7 Amps 0.34 Watts RoHS: Compliant	0	3000:$0.2110 6000:$0.2030 12000:$0.1540 24000:$0.1300
SI1539CDL-T1-GE3 DISTI # 78-SI1539CDL-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SC70-6 N&P PAIR RoHS: Compliant	478	1:$0.4600 10:$0.3110 100:$0.2100 500:$0.1680 1000:$0.1260 3000:$0.1160 6000:$0.1090 9000:$0.1020 24000:$0.0940
SI1539CDL-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SC70-6 N&P PAIR RoHS: Compliant	Americas -
SI1539CDL-T1-GE3 DISTI # 2056712RL	Vishay Intertechnologies	MOSFET, NP CH, 30V, W DIODE, SOT363 RoHS: Compliant	0	1:$0.7280 10:$0.4930 100:$0.3320 500:$0.2660 1000:$0.2000 3000:$0.1870
SI1539CDL-T1-GE3 DISTI # 2056712	Vishay Intertechnologies	MOSFET, NP CH, 30V, W DIODE, SOT363 RoHS: Compliant	0	1:$0.7280 10:$0.4930 100:$0.3320 500:$0.2660 1000:$0.2000 3000:$0.1870
SI1539CDL-T1-GE3 DISTI # 2056712	Vishay Intertechnologies	MOSFET, NP CH, 30V, W DIODE, SOT363 RoHS: Compliant	0	5:£0.3000 25:£0.2870 100:£0.1780 250:£0.1610 500:£0.1430

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von SI1539CDL-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,45 $~~; ~~0,45 $~~

10: ~~0,31 $~~; ~~3,10 $~~

100: ~~0,21 $~~; ~~20,90 $~~

500: ~~0,17 $~~; ~~83,50 $~~

1000: ~~0,12 $~~; ~~125,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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SI1539CDL-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

E**q

M***a

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes