IRFB4332PBF

IRFB4332PBF
Mfr. #:
IRFB4332PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 250V 60A 33mOhm 99nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB4332PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFB4332PBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
60 A
Rds On - Drain-Source-Widerstand:
33 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
99 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
390 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
100 S
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001556040
Gewichtseinheit:
0.211644 oz
Tags
IRFB43, IRFB4, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRFB4332PBF N-channel MOSFET Transistor, 60 A, 250 V, 3-Pin TO-220AB
***ure Electronics
Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3
***ark
Trans Mosfet N-Ch 250V 60A 3-Pin(3+Tab) To-220Ab Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 250V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:250V; On Resistance Rds(on):33mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:390W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4332; Current Id Max:60A; N-channel Gate Charge:99nC; Package / Case:TO-220AB; Power Dissipation Pd:390W; Power Dissipation Pd:390mW; Pulse Current Idm:230A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFB4332PBF
DISTI # V99:2348_13889749
Infineon Technologies AGTrans MOSFET N-CH 250V 60A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant
890
  • 100:$2.0130
  • 25:$2.2170
  • 10:$2.6410
  • 1:$3.0320
IRFB4332PBF
DISTI # IRFB4332PBF-ND
Infineon Technologies AGMOSFET N-CH 250V 60A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
839In Stock
  • 1000:$2.1945
  • 500:$2.6021
  • 100:$3.2134
  • 50:$3.5268
  • 1:$4.3900
IRFB4332PBF
DISTI # IRFB4332PBF
Infineon Technologies AGTrans MOSFET N-CH 250V 60A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB4332PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 1802
  • 1:$1.5900
  • 10:$1.5900
  • 25:$1.5900
  • 50:$1.4900
  • 100:$1.4900
  • 500:$1.3900
  • 1000:$1.3900
IRFB4332PBF
DISTI # SP001556040
Infineon Technologies AGTrans MOSFET N-CH 250V 60A 3-Pin(3+Tab) TO-220AB (Alt: SP001556040)
RoHS: Compliant
Min Qty: 1
Europe - 9994
  • 1:€3.1900
  • 10:€2.8900
  • 25:€2.6900
  • 50:€2.6900
  • 100:€2.6900
  • 500:€2.6900
  • 1000:€2.6900
IRFB4332PBF
DISTI # IRFB4332PBF
Infineon Technologies AGTrans MOSFET N-CH 250V 60A 3-Pin(3+Tab) TO-220AB (Alt: IRFB4332PBF)
RoHS: Compliant
Min Qty: 1000
Asia - 0
    IRFB4332PBF
    DISTI # 61M6837
    Infineon Technologies AGMOSFET, N, 250V, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation RoHS Compliant: Yes1130
    • 1:$3.7800
    • 10:$3.2100
    • 100:$2.7800
    • 500:$2.3700
    IRFB4332PBF.
    DISTI # 74AC3443
    Infineon Technologies AGTRANS MOSFET N-CH 250V 60A 3-PIN(3+TAB) TO-220AB ROHS COMPLIANT: YES0
    • 1:$3.7800
    • 10:$3.2100
    • 100:$2.7800
    • 500:$2.3700
    IRFB4332PBF
    DISTI # 70017932
    Infineon Technologies AGMOSFET,N Ch.,250V,60A,33 MOHM,99 NC QG,TO-220AB,Pb-Free
    RoHS: Compliant
    0
    • 250:$4.3010
    IRFB4332PBF
    DISTI # 942-IRFB4332PBF
    Infineon Technologies AGMOSFET MOSFT 250V 60A 33mOhm 99nC Qg
    RoHS: Compliant
    0
    • 1:$3.7800
    • 10:$3.2100
    • 100:$2.7800
    • 250:$2.6400
    • 500:$2.3700
    IRFB4332PBFInternational Rectifier60A, 250V, 0.033OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB7
    • 4:$2.3000
    • 1:$3.4500
    IRFB4332PBF
    DISTI # 495562
    Infineon Technologies AGMOSFET N-CHANNEL 250V 60A HEXFET TO220AB, EA198
    • 1:£2.9300
    • 10:£1.9200
    • 25:£1.7600
    IRFB4332PBF
    DISTI # IRFB4332PBF
    Infineon Technologies AGTransistor: N-MOSFET,unipolar,250V,60A,390W,TO220AB121
    • 1:$2.5300
    • 3:$2.3200
    • 10:$1.8800
    • 100:$1.6000
    IRFB4332PBF
    DISTI # IRFB4332PBF
    Infineon Technologies AGN-Ch 250V 60A 390W 0,033R TO220AB
    RoHS: Compliant
    480
    • 10:€1.6000
    • 50:€1.3000
    • 200:€1.1800
    • 500:€1.1400
    IRFB4332PBF
    DISTI # TMOSP12128
    Infineon Technologies AGN-CH 250V 60A 33mOhm TO220-3
    RoHS: Compliant
    Stock DE - 3000Stock US - 0
    • 50:$1.9400
    • 150:$1.8400
    • 250:$1.7200
    • 450:$1.5500
    • 950:$1.4900
    IRFB4332PBFInternational RectifierINSTOCK309
      IRFB4332PBF
      DISTI # XSKDRABV0021430
      INF 
      RoHS: Compliant
      792
      • 350:$2.4700
      • 792:$2.2600
      IRFB4332PBF
      DISTI # 1436962
      Infineon Technologies AGMOSFET, N, 250V, TO-220AB
      RoHS: Compliant
      1160
      • 1:£2.9900
      • 10:£1.8000
      • 100:£1.7800
      • 250:£1.7700
      • 500:£1.7500
      IRFB4332PBF
      DISTI # C1S327400132064
      Infineon Technologies AGTrans MOSFET N-CH 250V 60A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant
      1000
      • 1000:$1.9900
      • 500:$2.0700
      • 100:$2.1100
      • 50:$2.3900
      • 10:$2.8300
      • 1:$3.6600
      IRFB4332PBF
      DISTI # 1436962
      Infineon Technologies AGMOSFET, N, 250V, TO-220AB
      RoHS: Compliant
      1139
      • 1:$5.9900
      • 10:$5.0900
      • 100:$4.4000
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1990
      Menge eingeben:
      Der aktuelle Preis von IRFB4332PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      3,77 $
      3,77 $
      10
      3,20 $
      32,00 $
      100
      2,77 $
      277,00 $
      250
      2,63 $
      657,50 $
      500
      2,36 $
      1 180,00 $
      1000
      1,99 $
      1 990,00 $
      2000
      1,89 $
      3 780,00 $
      5000
      1,82 $
      9 100,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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