MAT03EHZ

MAT03EHZ
Mfr. #:
MAT03EHZ
Hersteller:
Analog Devices Inc.
Beschreibung:
Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MAT03EHZ Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MAT03EHZ Mehr Informationen MAT03EHZ Product Details
Produkteigenschaft
Attributwert
Hersteller:
Analog Devices Inc.
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Paket / Koffer:
TO-78-6
Polarität des Transistors:
PNP
Aufbau:
Dual
Kollektor- Emitterspannung VCEO Max:
36 V
Kollektor- Basisspannung VCBO:
36 V
Kollektor-Emitter-Sättigungsspannung:
100 mV
Maximaler DC-Kollektorstrom:
20 mA
Bandbreitenprodukt fT gewinnen:
190 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 125 C
Serie:
MAT03
Höhe:
4.7 mm (Max)
Länge:
9.4 mm (Max)
Verpackung:
Schüttgut
Breite:
9.4 mm (Max)
Marke:
Analoge Geräte
DC-Kollektor/Basisverstärkung hfe Min:
80 at 10 uA, 36 V
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
100
Unterkategorie:
Transistoren
Tags
MAT03, MAT0, MAT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronic Components
Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
***ical
Trans GP BJT PNP 36V 0.02A 6-Pin TO-78 Tube
***log Devices
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 Ohm) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance. Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long-term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base-emitter junction potential. This prevents a base-emitter break-down condition which can result in degradation of gain and matching performance due to excessive breakdown current.
Teil # Mfg. Beschreibung Aktie Preis
MAT03EHZ
DISTI # MAT03EHZ-ND
Analog Devices IncTRANS 2PNP 36V 0.02A TO78-6
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    MAT03EH
    DISTI # 584-MAT03EH
    Analog Devices IncBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
    RoHS: Not compliant
    0
      MAT03EHZ
      DISTI # 584-MAT03EHZ
      Analog Devices IncBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
      RoHS: Compliant
      0
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3000
        Menge eingeben:
        Der aktuelle Preis von MAT03EHZ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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