MR25H128ACDF

MR25H128ACDF
Mfr. #:
MR25H128ACDF
Hersteller:
Everspin Technologies
Beschreibung:
NVRAM 128Kb 3.3V 16Kx8 SPI
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MR25H128ACDF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MR25H128ACDF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Everspin-Technologien
Produktkategorie:
NVRAM
RoHS:
Y
Paket / Koffer:
DFN-8
Oberflächentyp:
SPI
Speichergröße:
128 kbit
Organisation:
16 k x 8
Datenbusbreite:
8 bit
Versorgungsspannung - Max.:
3.6 V
Versorgungsspannung - Min.:
2.7 V
Betriebsversorgungsstrom:
6 mA, 23 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Serie:
MR25H128A
Verpackung:
Tablett
Marke:
Everspin-Technologien
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Pd - Verlustleistung:
600 mW
Produktart:
NVRAM
Werkspackungsmenge:
570
Unterkategorie:
Speicher & Datenspeicherung
Tags
MR25H12, MR25H1, MR25H, MR25, MR2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
MRAM 128Kbit Serial-SPI Interface 3V/3.3V 8-Pin DFN EP Tray
Serial SPI MRAMs
Everspin Technologies MR25H256 / MR25H10 /MRH25H128 / MR25H40 SPI Serial MRAM devices offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
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Verfügbarkeit
Aktie:
586
Auf Bestellung:
2569
Menge eingeben:
Der aktuelle Preis von MR25H128ACDF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,96 $
5,96 $
10
4,79 $
47,90 $
100
4,36 $
436,00 $
250
3,94 $
985,00 $
500
3,53 $
1 765,00 $
1000
2,98 $
2 980,00 $
2500
2,83 $
7 075,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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