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118N10NS

118N10NS
Mfr. #:
118N10NS
Hersteller:
Infineon Technologies AG
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
118N10NS Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
118
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSC118N10NSGATMA1
DISTI # BSC118N10NSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3999In Stock
  • 1000:$0.7924
  • 500:$0.9563
  • 100:$1.1640
  • 10:$1.4480
  • 1:$1.6100
BSC118N10NSGATMA1
DISTI # BSC118N10NSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3999In Stock
  • 1000:$0.7924
  • 500:$0.9563
  • 100:$1.1640
  • 10:$1.4480
  • 1:$1.6100
BSC118N10NSGATMA1
DISTI # BSC118N10NSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 71A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 10000:$0.6721
  • 5000:$0.6897
BSC118N10NS G
DISTI # BSC118N10NS G		Infineon Technologies AGTrans MOSFET N-CH 100V 11A 8-Pin TDSON T/R (Alt: BSC118N10NS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 250000:$0.4810
  • 125000:$0.4872
  • 50000:$0.4935
  • 25000:$0.5000
  • 15000:$0.5135
  • 10000:$0.5278
  • 5000:$0.5429
BSC118N10NS G
DISTI # BSC118N10NSG		Infineon Technologies AGTrans MOSFET N-CH 100V 11A 8-Pin TDSON T/R - Bulk (Alt: BSC118N10NSG)
RoHS: Not Compliant
Min Qty: 491
Container: Bulk		Americas - 0
  • 4910:$0.6089
  • 2455:$0.6199
  • 1473:$0.6419
  • 982:$0.6659
  • 491:$0.6909
BSC118N10NSGATMA1
DISTI # BSC118N10NSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 11A 8-Pin TDSON T/R - Bulk (Alt: BSC118N10NSGATMA1)
RoHS: Compliant
Min Qty: 569
Container: Bulk		Americas - 0
  • 5690:$0.5589
  • 2845:$0.5689
  • 1707:$0.5889
  • 1138:$0.6109
  • 569:$0.6339
BSC118N10NSGATMA1
DISTI # BSC118N10NSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 11A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC118N10NSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.4869
  • 30000:$0.4959
  • 20000:$0.5139
  • 10000:$0.5329
  • 5000:$0.5529
BSC118N10NSGATMA1
DISTI # SP000379599		Infineon Technologies AGTrans MOSFET N-CH 100V 11A 8-Pin TDSON T/R (Alt: SP000379599)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.5689
  • 30000:€0.6129
  • 20000:€0.6639
  • 10000:€0.7249
  • 5000:€0.8859
BSC118N10NSGATMA1.
DISTI # 31AC8221		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:71A,Drain Source Voltage Vds:100V,On Resistance Rds(on):11.8mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:114W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 10000:$0.5610
  • 20000:$0.5610
  • 30000:$0.5610
  • 50000:$0.5610
  • 1:$0.5820
BSC118N10NS G
DISTI # 726-BSC118N10NSG		Infineon Technologies AGMOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
RoHS: Compliant		4970
  • 1:$1.5700
  • 10:$1.3400
  • 100:$1.0300
  • 500:$0.9120
  • 1000:$0.7190
  • 5000:$0.6860
BSC118N10NSGInfineon Technologies AGPower Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		9823
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
BSC118N10NSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 11A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		5000
  • 1000:$0.5800
  • 500:$0.6100
  • 100:$0.6300
  • 25:$0.6600
  • 1:$0.7100
BSC118N10NSGInfineon Technologies AG100V,71A,N Channel Power MOSFET4000
  • 1:$1.2400
  • 100:$1.0300
  • 500:$0.9100
  • 1000:$0.8900
Bild Teil # Beschreibung
118N10NS

Mfr.#: 118N10NS

OMO.#: OMO-118N10NS-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von 118N10NS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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