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SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3
Mfr. #:
SIHH26N60E-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHH26N60E-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHH26N60E-T1-GE3 DatasheetSIHH26N60E-T1-GE3 Datasheet (P4-P6)SIHH26N60E-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SIHH26N60E-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-8x8-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
25 A
Rds On - Drain-Source-Widerstand:
117 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
77 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
202 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
45 ns
Produktart:
MOSFET
Anstiegszeit:
54 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
80 ns
Typische Einschaltverzögerungszeit:
28 ns
Tags
SIHH2, SIHH, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 135 mOhm 77 nC SMT E Series Power Mosfet - PowerPAK 8x8
***ical
Trans MOSFET N-CH 600V 25A 4-Pin PowerPAK EP T/R
***ronik
N-CH 600V 25A 117mOhm PwPAK8x8
***ark
MOSFET, N-CH, 600V, 25A, POWERPAK-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:25A; On Resistance Rds(on):0.117ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHH26N60E-T1-GE3
DISTI # V72:2272_14140851		Vishay IntertechnologiesTrans MOSFET N-CH 600V 25A 4-Pin PowerPAK EP T/R0
    SIHH26N60E-T1-GE3
    DISTI # SIHH26N60E-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 600V 25A POWERPAK8X8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		119In Stock
    • 1000:$3.0524
    • 500:$3.6193
    • 100:$4.2516
    • 10:$5.1890
    • 1:$5.7800
    SIHH26N60E-T1-GE3
    DISTI # SIHH26N60E-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 600V 25A POWERPAK8X8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		119In Stock
    • 1000:$3.0524
    • 500:$3.6193
    • 100:$4.2516
    • 10:$5.1890
    • 1:$5.7800
    SIHH26N60E-T1-GE3
    DISTI # SIHH26N60E-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 600V 25A POWERPAK8X8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 3000:$2.8153
    SIHH26N60E-T1-GE3
    DISTI # SIHH26N60E-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 600V 25A 5-Pin PowerPAK T/R (Alt: SIHH26N60E-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€2.3900
    • 18000:€2.5900
    • 12000:€2.7900
    • 6000:€3.4900
    • 3000:€4.3900
    SIHH26N60E-T1-GE3
    DISTI # SIHH26N60E-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 600V 25A 5-Pin PowerPAK T/R - Tape and Reel (Alt: SIHH26N60E-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$2.4900
    • 18000:$2.5900
    • 12000:$2.6900
    • 6000:$2.7900
    • 3000:$2.8900
    SIHH26N60E-T1-GE3
    DISTI # 78-SIHH26N60E-T1-GE3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
    RoHS: Compliant    		3000
    • 1:$5.6400
    • 10:$4.6700
    • 100:$3.8500
    • 250:$3.7300
    • 500:$3.3400
    • 1000:$2.8200
    • 3000:$2.6800
    SIHH26N60E-T1-GE3Vishay Intertechnologies 3320
      SIHH26N60E-T1-GE3
      DISTI # TMOSP12828      		Vishay IntertechnologiesN-CH 600V 25A 117mOhm PwPAK8x8
      RoHS: Compliant      		Stock DE - 0Stock HK - 0Stock US - 0
      • 3000:$2.9600
      SIHH26N60E-T1-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
      RoHS: Compliant      		Americas -
        SIHH26N60E-T1-GE3
        DISTI # 2526617        		Vishay IntertechnologiesMOSFET, N-CH, 600V, 25A, POWERPAK-82738
        • 500:£2.3000
        • 250:£2.5700
        • 100:£2.6500
        • 10:£3.2000
        • 1:£4.2900
        SIHH26N60E-T1-GE3
        DISTI # 2526617        		Vishay IntertechnologiesMOSFET, N-CH, 600V, 25A, POWERPAK-8
        RoHS: Compliant        		2738
        • 3000:$4.0400
        • 1000:$4.2500
        • 500:$5.0300
        • 250:$5.6200
        • 100:$5.8000
        • 10:$7.0400
        • 1:$8.5000
        Bild Teil # Beschreibung
        SIHH26N60E-T1-GE3

        Mfr.#: SIHH26N60E-T1-GE3

        OMO.#: OMO-SIHH26N60E-T1-GE3

        		 MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
        SIHH26N60EF-T1-GE3

        Mfr.#: SIHH26N60EF-T1-GE3

        OMO.#: OMO-SIHH26N60EF-T1-GE3

        		 MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
        SIHH26N60E-T1-GE3

        Mfr.#: SIHH26N60E-T1-GE3

        OMO.#: OMO-SIHH26N60E-T1-GE3-VISHAY

        		 MOSFET N-CH 600V 25A POWERPAK8X8
        SIHH26N60EF-T1-GE3

        Mfr.#: SIHH26N60EF-T1-GE3

        OMO.#: OMO-SIHH26N60EF-T1-GE3-VISHAY

        		 Trans MOSFET N-CH 600V 24A 5-Pin PowerPAK EP T/R
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1986
        Menge eingeben:
        Der aktuelle Preis von SIHH26N60E-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        5,64 $
        5,64 $
        10
        4,67 $
        46,70 $
        100
        3,85 $
        385,00 $
        250
        3,73 $
        932,50 $
        500
        3,34 $
        1 670,00 $
        1000
        2,82 $
        2 820,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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