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STB150N3LH6

STB150N3LH6
Mfr. #:
STB150N3LH6
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch 30V 2.4mOhm 80A STripFET VI DeepGATE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STB150N3LH6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STB150N3LH6 Mehr Informationen STB150N3LH6 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
80 nC
Pd - Verlustleistung:
110 W
Aufbau:
Single
Verpackung:
Spule
Serie:
STB150N3LH6
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
85 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
100 ns
Typische Einschaltverzögerungszeit:
15 ns
Gewichtseinheit:
0.139332 oz
Tags
STB150, STB15, STB1, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
***el Electronic
MOSFET N-Ch 30V 2.4mOhm 80A STripFET VI DeepGATE
***r Electronics
Power Field-Effect Transistor
Teil # Mfg. Beschreibung Aktie Preis
STB150N3LH6
DISTI # 497-13263-1-ND		STMicroelectronicsMOSFET N CH 30V 80A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		998In Stock
  • 500:$1.8440
  • 100:$2.3708
  • 10:$2.9500
  • 1:$3.2700
STB150N3LH6
DISTI # 497-13263-6-ND		STMicroelectronicsMOSFET N CH 30V 80A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		998In Stock
  • 500:$1.8440
  • 100:$2.3708
  • 10:$2.9500
  • 1:$3.2700
STB150N3LH6
DISTI # 497-13263-2-ND		STMicroelectronicsMOSFET N CH 30V 80A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    STB150N3LH6
    DISTI # 511-STB150N3LH6    		STMicroelectronicsMOSFET N-Ch 30V 2.4mOhm 80A STripFET VI DeepGATE
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
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      STB150N3LH6

      Mfr.#: STB150N3LH6

      OMO.#: OMO-STB150N3LH6

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      OMO.#: OMO-STB15NK50ZT4-STMICROELECTRONICS

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      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von STB150N3LH6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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