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BSM400C12P3G202

BSM400C12P3G202
Mfr. #:
BSM400C12P3G202
Hersteller:
Rohm Semiconductor
Beschreibung:
Discrete Semiconductor Modules 1200V Vdss; 358A ID SiC Mod; SICSTD02
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSM400C12P3G202 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSM400C12P3G202 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
Diskrete Halbleitermodule
RoHS:
Y
Produkt:
Leistungshalbleitermodule
Typ:
SiC-Leistungsmodul
Vf - Durchlassspannung:
1.7 V at 400 A
Vgs - Gate-Source-Spannung:
- 4 V, 22 V
Montageart:
Schraubbefestigung
Paket / Koffer:
Modul
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
BSMx
Verpackung:
Tablett
Aufbau:
Zerhacker
Technologie:
SiC
Marke:
ROHM Halbleiter
Polarität des Transistors:
N-Kanal
Typische Verzögerungszeit:
55 ns
Abfallzeit:
45 ns
Id - Kontinuierlicher Drainstrom:
358 A
Pd - Verlustleistung:
1570 W
Produktart:
Diskrete Halbleitermodule
Anstiegszeit:
40 ns
Werkspackungsmenge:
4
Unterkategorie:
Diskrete Halbleitermodule
Typische Ausschaltverzögerungszeit:
180 ns
Typische Einschaltverzögerungszeit:
55 ns
Vds - Drain-Source-Durchbruchspannung:
1200 V
Vgs th - Gate-Source-Schwellenspannung:
2.7 V
Tags
BSM400, BSM4, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Power Modules
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These modules support high-frequency operation through reduced switching loss. The optimized design reduces stary inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
Teil # Mfg. Beschreibung Aktie Preis
BSM400C12P3G202
DISTI # BSM400C12P3G202-ND		ROHM SemiconductorBSM400C12P3G202 IS A CHOPPER MOD
RoHS: Compliant
Min Qty: 1
Container: Tray		On Order
  • 1:$854.0000
BSM400C12P3G202
DISTI # 755-BSM400C12P3G202		ROHM SemiconductorDiscrete Semiconductor Modules 1200V Vdss,358A ID SiC Mod,SICSTD02
RoHS: Compliant		0
  • 1:$762.5000
  • 5:$750.3100
BSM400C12P3G202ROHM SemiconductorDiscrete Semiconductor Modules 1200V Vdss,358A ID SiC Mod,SICSTD02Americas -
    Bild Teil # Beschreibung
    BSM400C12P3G202

    Mfr.#: BSM400C12P3G202

    OMO.#: OMO-BSM400C12P3G202

    		 Discrete Semiconductor Modules 1200V Vdss; 358A ID SiC Mod; SICSTD02
    BSM400C12P3G202

    Mfr.#: BSM400C12P3G202

    OMO.#: OMO-BSM400C12P3G202-ROHM-SEMI

    		 BSM400C12P3G202 IS A CHOPPER MOD
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von BSM400C12P3G202 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    762,50 $
    762,50 $
    5
    750,31 $
    3 751,55 $
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