SI9945BDY-T1-GE3

Mfr. #:: SI9945BDY-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 60V Vds 20V Vgs SO-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI9945BDY-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI9945BDY-T1-GE3 Datasheet SI9945BDY-T1-GE3 Datasheet (P4-P6)SI9945BDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:: SI9945BDY-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SO-8

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 5.3 A

Rds On - Drain-Source-Widerstand:: 58 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 13 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 3.1 W

Aufbau:: Dual

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SI9

Transistortyp:: 2 N-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 15 S

Abfallzeit:: 10 ns

Produktart:: MOSFET

Anstiegszeit:: 15 ns, 65 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 10 ns, 15 ns

Typische Einschaltverzögerungszeit:: 15 ns, 20 ns

Teil # Aliase:: SI9945BDY-GE3

Gewichtseinheit:: 0.006596 oz

Tags: SI9945BDY-T1-G, SI9945BDY-T, SI9945BD, SI9945B, SI9945, SI994, SI99, SI9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9945BDY-T1-GE3 Beschreibung

***Components: On a Reel of 2500, Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

***th Star Micro: Transistor MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R

***ure Electronics: SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8

***ied Electronics & Automation: MOSFET; Dual N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 46mohm; Id 5.3; SO-8; Pd 3.1W

***ical: Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N T/R

***C: Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC

***ark: Dual N-Channel 60-V (D-S) Mosfet Rohs Compliant: No

***i-Key: MOSFET 2N-CH 60V 5.3A 8-SOIC

***ponent Sense: NFET 60V 4.7 to 5.3A 0.058 to 0.072Oh

***ukat: 2xN-Ch 60V 5,3A 2,0W 0,058R SO8

***ronik: DUAL N-CH 60V 5,3A 58mOhm SO-8

***: DUAL N-CHANNEL 60-V (D-S)

***nell: MOSFET, NN CH, 60V, 5.3A, 8SOIC; Module Configuration:Dual N Channel; Transistor Polarity:N-Channel; Current Id Max:5.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8

***ment14 APAC: MOSFET, NN CH, 60V, 5.3A, 8SOIC; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Drain Source Voltage Vds:60V; Module Configuration:Dual; On Resistance Rds(on):46mohm; Power Dissipation Pd:3.1W

SI9945BDY-T1-GE3 Mehr Informationen

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI9945BDY-T1-GE3 DISTI # V72:2272_09216529	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	471	250:$0.4802 100:$0.4815 25:$0.5858 10:$0.5880 1:$0.6788
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13862In Stock	1000:$0.4331 500:$0.5414 100:$0.7308 10:$0.9470 1:$1.0800
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13862In Stock	1000:$0.4331 500:$0.5414 100:$0.7308 10:$0.9470 1:$1.0800
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	12500In Stock	2500:$0.3810
SI9945BDY-T1-GE3 DISTI # 30722949	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant	471	250:$0.4802 100:$0.4815 25:$0.5858 22:$0.5880
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI9945BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 127295	2500:€0.6009 5000:€0.4099 10000:€0.3529 15000:€0.3259 25000:€0.3029
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R (Alt: SI9945BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI9945BDY-T1-GE3 DISTI # SI9945BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9945BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3539 5000:$0.3439 10000:$0.3299 15000:$0.3209 25000:$0.3119
SI9945BDY-T1-GE3 DISTI # 72R4255	Vishay Intertechnologies	Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 72R4255) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.0900 10:$0.9020 25:$0.8380 50:$0.7740 100:$0.7100 250:$0.6660 500:$0.6200
SI9945BDY-T1-GE3 DISTI # 72R4255	Vishay Intertechnologies	MOSFET, DUAL N CH, 60V, 5.3A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):46mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs Typ:2.5V , RoHS Compliant: Yes	1093	1:$1.0900 10:$0.9030 25:$0.8380 50:$0.7740 100:$0.7090 250:$0.6660 500:$0.6210
SI9945BDY-T1-GE3. DISTI # 26AC3355	Vishay Intertechnologies	DUAL N-CHANNEL 60-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.3570 2500:$0.3490 5000:$0.3400 10000:$0.3270
SI9945BDY-T1-GE3 DISTI # 70026454	Vishay Siliconix	MOSFET,Dual N-Ch,Vds 60V,Vgs +/- 20V,Rds(on) 46mohm,Id 5.3,SO-8,Pd 3.1W RoHS: Compliant	2470	1:$0.4880 25:$0.4630 100:$0.4390 250:$0.4150 500:$0.3980
SI9945BDY-T1-GE3 DISTI # 781-SI9945BDY-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SO-8 RoHS: Compliant	11149	1:$0.9000 10:$0.7350 100:$0.5640 500:$0.4850 1000:$0.3830 2500:$0.3570 5000:$0.3400 10000:$0.3270
SI9945BDY-T1-GE3	Vishay Intertechnologies	SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8 RoHS: Compliant	87500Reel	2500:$0.3300
SI9945BDY-T1-GE3 DISTI # 7878995	Vishay Intertechnologies	MOSFET DUAL N-CH 60V 5.3A/4.7A SOIC8, PK	1140	10:£0.5700 30:£0.5020
SI9945BDY-T1-GE3 DISTI # 7878995P	Vishay Intertechnologies	MOSFET DUAL N-CH 60V 5.3A/4.7A SOIC8, RL	8590	30:£0.5020
SI9945BDYT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 800
SI9945BDY-T1-GE3 DISTI # TMOSP9460	Vishay Intertechnologies	DUAL N-CH 60V 5,3A 58mOhm SO-8 RoHS: Compliant	Stock DE - 2500Stock US - 0	2500:$0.3384
SI9945BDY-T1-GE3 DISTI # SI9945BDY-GE3	Vishay Intertechnologies	2xN-Ch 60V 5,3A 2,0W 0,058R SO8 RoHS: Compliant	8350	50:€0.3990 100:€0.3390 500:€0.3090 2500:€0.2985
SI9945BDY-T1-GE3 DISTI # XSFP00000015511	Vishay Siliconix	SmallSignalField-EffectTransistor,5.3AI(D),60V,2-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET RoHS: Compliant	679731	2500:$0.7100 679731:$0.6455
SI9945BDY-T1-GE3 DISTI # 1794822	Vishay Intertechnologies	MOSFET, NN CH, 60V, 5.3A, 8SOIC RoHS: Compliant	13365	5:£0.5810 25:£0.5120 100:£0.4350 250:£0.4050 500:£0.3740
SI9945BDY-T1-GE3 DISTI # 1794822RL	Vishay Intertechnologies	MOSFET, NN CH, 60V, 5.3A, 8SOIC RoHS: Compliant	0	1:$1.4300 10:$1.1700 100:$0.8930 500:$0.7680 1000:$0.6060 2500:$0.5650 5000:$0.5380 10000:$0.5180
SI9945BDY-T1-GE3 DISTI # 1794822	Vishay Intertechnologies	MOSFET, NN CH, 60V, 5.3A, 8SOIC RoHS: Compliant	7350	1:$1.4300 10:$1.1700 100:$0.8930 500:$0.7680 1000:$0.6060 2500:$0.5650 5000:$0.5380 10000:$0.5180
SI9945BDY-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 35000
SI9945BDY-T1-GE3.	Vishay Intertechnologies	MOSFET DUAL N-CHANNEL 60-V (D-S) RoHS: Compliant	Americas - 2025	25:$0.4480
SI9945BDY-T1-GE3	Vishay Intertechnologies	60V,5.3A,Dual N-Channel MOSFET	90	1:$0.6700 100:$0.4700 500:$0.3600 1000:$0.3400
SI9945BDY-T1-GE3 DISTI # C1S806000594091	Vishay Intertechnologies	MOSFETs	471	250:$0.4781 100:$0.4795 25:$0.5824 10:$0.5848

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Verfügbarkeit

Aktie:: 19
Auf Bestellung:: 2002
Menge eingeben:

Der aktuelle Preis von SI9945BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,89 $~~; ~~0,89 $~~

10: ~~0,73 $~~; ~~7,34 $~~

100: ~~0,56 $~~; ~~56,30 $~~

500: ~~0,48 $~~; ~~242,00 $~~

1000: ~~0,38 $~~; ~~382,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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SI9945BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes