2N7002E-7-F

2N7002E-7-F
Mfr. #:
2N7002E-7-F
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET N-Channel
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N7002E-7-F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N7002E-7-F Datasheet2N7002E-7-F Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
2N7002E-7-F Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
300 mA
Rds On - Drain-Source-Widerstand:
3 Ohms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
223 pC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
540 mW
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
1 mm
Länge:
2.9 mm
Produkt:
MOSFET Kleinsignal
Serie:
2N7002E
Transistortyp:
1 N-Channel
Breite:
1.3 mm
Marke:
Eingebaute Dioden
Vorwärtstranskonduktanz - Min:
80 mS
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
11 ns
Typische Einschaltverzögerungszeit:
7 ns
Gewichtseinheit:
0.000282 oz
Tags
2N7002E-7, 2N7002E, 2N7002, 2N700, 2N70, 2N7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 150, N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Diodes Inc 2N7002E-7-F
***et
Transistor MOSFET N-CH 60V 300mA 3-Pin SOT-23 T/R
***p One Stop Global
Trans MOSFET N-CH 60V 0.3A Automotive 3-Pin SOT-23 T/R
***ure Electronics
N-Channel 60 V 4 Ohm MosFet Surface Mount - SOT-23-3
***ied Electronics & Automation
N-Channel Enhancement MOSFET SOT-23
*** Source Electronics
MOSFET N-CH 60V 0.25A SOT23-3
***ser
MOSFETs - Low Threshold Voltage N-Channel
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Teil # Mfg. Beschreibung Aktie Preis
2N7002E-7-F
DISTI # 2N7002E-FDICT-ND
Diodes IncorporatedMOSFET N-CH 60V 0.25A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
47661In Stock
  • 1000:$0.0619
  • 500:$0.0891
  • 100:$0.1627
  • 10:$0.2870
  • 1:$0.3100
2N7002E-7-F
DISTI # 2N7002E-FDIDKR-ND
Diodes IncorporatedMOSFET N-CH 60V 0.25A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
47661In Stock
  • 1000:$0.0619
  • 500:$0.0891
  • 100:$0.1627
  • 10:$0.2870
  • 1:$0.3100
2N7002E-7-F
DISTI # 2N7002E-FDITR-ND
Diodes IncorporatedMOSFET N-CH 60V 0.25A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
45000In Stock
  • 3000:$0.0546
2N7002E-7-F
DISTI # 2N7002E-7-F
Diodes IncorporatedTrans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: 2N7002E-7-F)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.0249
  • 6000:$0.0236
  • 12000:$0.0225
  • 18000:$0.0215
  • 30000:$0.0210
2N7002E-7-F
DISTI # 2N7002E-7-F
Diodes IncorporatedTrans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R (Alt: 2N7002E-7-F)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.0326
  • 6000:€0.0325
  • 12000:€0.0324
  • 18000:€0.0323
  • 30000:€0.0284
2N7002E-7-F
DISTI # 70550310
Diodes IncorporatedN-Channel Enhancement MOSFET SOT-23
RoHS: Compliant
0
  • 750:$0.0560
  • 1500:$0.0410
  • 2250:$0.0360
  • 3000:$0.0330
2N7002E-7-F
DISTI # 621-2N7002E-7-F
Diodes IncorporatedMOSFET N-Channel
RoHS: Compliant
44936
  • 1:$0.2700
  • 10:$0.1800
  • 100:$0.0750
  • 1000:$0.0520
  • 3000:$0.0400
2N7002E-7
DISTI # 621-2N7002E-7
Diodes IncorporatedMOSFET N-Channel
RoHS: Not compliant
0
    2N7002E-7-F
    DISTI # 8228641P
    Zetex / Diodes IncN-CHANNEL ENHANCEMENT MOSFET SOT-23, RL13350
    • 750:£0.0510
    • 1500:£0.0440
    2N7002E-7-F
    DISTI # 8228641
    Zetex / Diodes IncN-CHANNEL ENHANCEMENT MOSFET SOT-23, PK7950
    • 150:£0.0550
    • 750:£0.0510
    • 1500:£0.0440
    2N7002E-7-F
    DISTI # 2N7002E-7-F
    Diodes IncorporatedTransistor: N-MOSFET,unipolar,60V,0.2A,0.37W,SOT2323
    • 10:$0.0557
    • 50:$0.0376
    • 250:$0.0332
    • 1000:$0.0299
    • 3000:$0.0279
    2N7002E-7-F
    DISTI # XSFP00000139057
    Diodes IncorporatedSmall Signal Field-Effect Transistor,0.24AI(D),60V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
    RoHS: Compliant
    12114
    • 6000:$0.0440
    • 12114:$0.0400
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    Mfr.#: LCDA05.TBT

    OMO.#: OMO-LCDA05-TBT-SEMTECH

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    Verfügbarkeit
    Aktie:
    60
    Auf Bestellung:
    2043
    Menge eingeben:
    Der aktuelle Preis von 2N7002E-7-F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,26 $
    0,26 $
    10
    0,18 $
    1,80 $
    100
    0,08 $
    7,50 $
    1000
    0,05 $
    52,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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