OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SIHB120N60E-GE3

SIHB120N60E-GE3
Mfr. #:
SIHB120N60E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB120N60E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIHB120N60E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
25 A
Rds On - Drain-Source-Widerstand:
120 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
45 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
179 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
E
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
6 S
Abfallzeit:
33 ns
Produktart:
MOSFET
Anstiegszeit:
65 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
31 ns
Typische Einschaltverzögerungszeit:
19 ns
Tags
SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHB120N60E-GE3
DISTI # V99:2348_22831174		Vishay IntertechnologiesSIHB120N60E-GE31000
  • 25:$3.9140
  • 10:$4.5000
  • 1:$5.4516
SIHB120N60E-GE3
DISTI # SIHB120N60E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 650V D2PAK (TO-263
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 3000:$2.6296
  • 1000:$2.7680
  • 100:$3.8554
  • 25:$4.4484
  • 10:$4.7060
  • 1:$5.2400
SIHB120N60E-GE3
DISTI # 33739827		Vishay IntertechnologiesSIHB120N60E-GE31000
  • 25:$3.9140
  • 10:$4.5000
  • 3:$5.4516
SIHB120N60E-GE3
DISTI # 78-SIHB120N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		1000
  • 1:$5.2700
  • 10:$4.3600
  • 100:$3.5900
  • 250:$3.4800
  • 500:$3.1200
SIHB120N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    Bild Teil # Beschreibung
    SIHB120N60E-GE3

    Mfr.#: SIHB120N60E-GE3

    OMO.#: OMO-SIHB120N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB120N60E-GE3

    Mfr.#: SIHB120N60E-GE3

    OMO.#: OMO-SIHB120N60E-GE3-VISHAY

    		 MOSFET N-CHAN 650V D2PAK (TO-263
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von SIHB120N60E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,27 $
    5,27 $
    10
    4,36 $
    43,60 $
    100
    3,59 $
    359,00 $
    250
    3,48 $
    870,00 $
    500
    3,12 $
    1 560,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    • SUM70101EL 100 V P-Channel MOSFET
      SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • Compare SIHB120N60E-GE3
      Compare SIHB120N60E-GE3
      SIHB120N60EGE3 vs SIHB12N50C vs SIHB12N50CE3
    • SIRA20DP TrenchFET® Gen IV MOSFET
      SIRA20DP TrenchFET® Gen IV MOSFET
      Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
    • P-Channel MOSFETs
      P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • SiP32452, SiP32453 Load Switch
      SiP32452, SiP32453 Load Switch
      Vishay's load switches have a low input logic control threshold and a fast turn on time.
    • PowerPAIR®
      PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    More Newest Products
    Top