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SI4894BDY-T1-E3

SI4894BDY-T1-E3
Mfr. #:
SI4894BDY-T1-E3
Hersteller:
Vishay
Beschreibung:
Darlington Transistors MOSFET 30V 12V 1.4W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4894BDY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4894BDY-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Verpackung
Spule
Teil-Aliasnamen
SI4894BDY-E3
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Handelsname
TrenchFET
Paket-Koffer
SOIC-Narrow-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
1.4 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns
Anstiegszeit
10 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
8.9 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
11 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
33 ns
Typische-Einschaltverzögerungszeit
13 ns
Kanal-Modus
Erweiterung
Tags
SI4894BDY-T1-E, SI4894BDY-T1, SI4894BDY-T, SI4894B, SI4894, SI489, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4894BDY-T1-E3
DISTI # V72:2272_09216628		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R
RoHS: Compliant		517
  • 500:$0.6430
  • 250:$0.7033
  • 100:$0.7109
  • 25:$0.8846
  • 10:$0.8954
  • 1:$1.0409
SI4894BDY-T1-E3
DISTI # SI4894BDY-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 30V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 2500:$0.5852
SI4894BDY-T1-E3
DISTI # SI4894BDY-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 30V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5000In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI4894BDY-T1-E3
DISTI # SI4894BDY-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5000In Stock
  • 1000:$0.6458
  • 500:$0.8180
  • 100:$1.0548
  • 10:$1.3350
  • 1:$1.5100
SI4894BDY-T1-E3
DISTI # 25790174		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R
RoHS: Compliant		517
  • 500:$0.6430
  • 250:$0.7033
  • 100:$0.7109
  • 25:$0.8846
  • 14:$0.8954
SI4894BDY-T1-E3
DISTI # SI4894BDY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R (Alt: SI4894BDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4894BDY-T1-E3
    DISTI # SI4894BDY-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4894BDY-T1-E3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.5529
    • 5000:$0.5359
    • 10000:$0.5139
    • 15000:$0.4999
    • 25000:$0.4869
    SI4894BDY-T1-E3
    DISTI # SI4894BDY-T1-E3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8.9A 8-Pin SOIC N T/R (Alt: SI4894BDY-T1-E3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 2500:€0.4419
    • 5000:€0.3019
    • 10000:€0.2599
    • 15000:€0.2399
    • 25000:€0.2229
    SI4894BDY-T1-E3
    DISTI # 781-SI4894BDY-E3    		Vishay IntertechnologiesMOSFET 30V 12V 1.4W
    RoHS: Compliant    		2421
    • 1:$1.3100
    • 10:$1.0800
    • 100:$0.8230
    • 500:$0.7080
    • 1000:$0.6700
    • 2500:$0.6210
    SI4894BDY-T1-E3Vishay SiliconixSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 8.9A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET2180
    • 2001:$0.3520
    • 447:$0.4000
    • 1:$1.2800
    SI4894BDY-T1-E3-PBFVishay Intertechnologies 1674
    • 1054:$0.6650
    • 212:$0.7600
    • 1:$1.9000
    SI4894BDY-T1-E3-PBFVishay IntertechnologiesINSTOCK24136
      SI4894BDY-T1-E3Vishay IntertechnologiesMOSFET 30V 12V 1.4WAmericas -
        SI4894BDY-T1-E3
        DISTI # C1S803601298029        		Vishay IntertechnologiesMOSFETs
        RoHS: Compliant        		517
        • 250:$0.7033
        • 100:$0.7109
        • 25:$0.8846
        • 10:$0.8954
        Bild Teil # Beschreibung
        SI4894BDY-T1-E3

        Mfr.#: SI4894BDY-T1-E3

        OMO.#: OMO-SI4894BDY-T1-E3

        		 MOSFET 30V 12V 1.4W
        SI4894BDY-T1-E3

        Mfr.#: SI4894BDY-T1-E3

        OMO.#: OMO-SI4894BDY-T1-E3-VISHAY

        		 Darlington Transistors MOSFET 30V 12V 1.4W
        SI4894BDY-T1-E3-CUT TAPE

        Mfr.#: SI4894BDY-T1-E3-CUT TAPE

        OMO.#: OMO-SI4894BDY-T1-E3-CUT-TAPE-1190

        		 Neu und Original
        SI4894BDY

        Mfr.#: SI4894BDY

        OMO.#: OMO-SI4894BDY-1190

        		 Neu und Original
        SI4894BDY-T1

        Mfr.#: SI4894BDY-T1

        OMO.#: OMO-SI4894BDY-T1-1190

        		 Neu und Original
        SI4894BDY-T1-E3 GE3

        Mfr.#: SI4894BDY-T1-E3 GE3

        OMO.#: OMO-SI4894BDY-T1-E3-GE3-1190

        		 Neu und Original
        SI4894BDY-T1-E3-PBF

        Mfr.#: SI4894BDY-T1-E3-PBF

        OMO.#: OMO-SI4894BDY-T1-E3-PBF-1190

        		 Neu und Original
        SI4894BDY-T1-GE3

        Mfr.#: SI4894BDY-T1-GE3

        OMO.#: OMO-SI4894BDY-T1-GE3-VISHAY

        		 MOSFET N-CH 30V 8.9A 8-SOIC
        SI4894BDY-T1-GE3.

        Mfr.#: SI4894BDY-T1-GE3.

        OMO.#: OMO-SI4894BDY-T1-GE3--1190

        		 Neu und Original
        SI4894BDY-TI-E3

        Mfr.#: SI4894BDY-TI-E3

        OMO.#: OMO-SI4894BDY-TI-E3-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        2500
        Menge eingeben:
        Der aktuelle Preis von SI4894BDY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,38 $
        0,38 $
        10
        0,36 $
        3,61 $
        100
        0,34 $
        34,19 $
        500
        0,32 $
        161,50 $
        1000
        0,30 $
        304,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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