MRF6V2010NR1

MRF6V2010NR1
Mfr. #:
MRF6V2010NR1
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors VHV6 10W TO270-2N
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF6V2010NR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
E
Polarität des Transistors:
N-Kanal
Technologie:
Si
Vds - Drain-Source-Durchbruchspannung:
110 V
Gewinnen:
23.9 dB
Ausgangsleistung:
10 W
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
TO-270
Verpackung:
Spule
Aufbau:
Single
Höhe:
2.08 mm
Länge:
9.7 mm
Arbeitsfrequenz:
450 MHz
Serie:
MRF6V2010N
Typ:
HF-Leistungs-MOSFET
Breite:
6.15 mm
Marke:
NXP / Freescale
Kanalmodus:
Erweiterung
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 5 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.68 V
Teil # Aliase:
935309669528
Gewichtseinheit:
0.018679 oz
Tags
MRF6V2010N, MRF6V20, MRF6V2, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***a
    G***a
    IT

    ok

    2019-01-22
    T***t
    T***t
    SK

    Works great

    2019-03-25
    E***v
    E***v
    RU

    It's okay. Shipping 55 days.

    2019-07-10
    Y***v
    Y***v
    RU

    Order on march 7, came on april 26.

    2019-04-26
***W
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***W
RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V, FM2F
***ment14 APAC
RF MOSFET, N CHANNEL, 68V, TO-270; Drain Source Voltage Vds:68V; RF Transistor Case:TO-270; MSL:MSL 3 - 168 hours; Termination Type:SMD; Gain:18dB; Peak Reflow Compatible (260 C):Yes; Transistor Polarity:N Channel
***ark
RF MOSFET, N CHANNEL, 68V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:TO-270; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:900MHz ;RoHS Compliant: Yes
***escale Semiconductor
Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V
***W
RF Power Transistor,865 to 960 MHz, 45 W, Typ Gain in dB is 22.1 @ 880 MHz, 28 V, LDMOS, SOT1732
***ment14 APAC
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF MOSFET; Drain Source Voltage Vds:66V; Operating Frequency Min:920MHz; Operating Frequency Max:960MHz; RF Transistor Case:TO-270; No. of Pins:2; Filter Terminals:Surface Mount
***ark
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:22.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes
***escale Semiconductor
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2700 MHz, 3 W Avg., 28 V
***et
Transistor RF FET N-CH 68V 2300MHz to 2700MHz 3-Pin TO-270 T/R
*** Electronic Components
RF MOSFET Transistors HV6 2.7GHZ 15W
***S
French Electronic Distributor since 1988
***i-Key Marketplace
RF S BAND, N-CHANNEL , TO-270AA
Teil # Mfg. Beschreibung Aktie Preis
MRF6V2010NR1
DISTI # V72:2272_07204046
NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant
469
  • 250:$13.5700
  • 100:$15.0800
  • 25:$18.0100
  • 10:$18.0200
  • 1:$19.4600
MRF6V2010NR1
DISTI # MRF6V2010NR1CT-ND
NXP SemiconductorsFET RF 110V 220MHZ TO270-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
148In Stock
  • 100:$15.7836
  • 10:$18.4830
  • 1:$20.0400
MRF6V2010NR1
DISTI # MRF6V2010NR1DKR-ND
NXP SemiconductorsFET RF 110V 220MHZ TO270-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
148In Stock
  • 100:$15.7836
  • 10:$18.4830
  • 1:$20.0400
MRF6V2010NR1
DISTI # MRF6V2010NR1TR-ND
NXP SemiconductorsFET RF 110V 220MHZ TO270-2
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 500:$13.9125
MRF6V2010NR1
DISTI # 23552799
NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant
500
  • 500:$16.8667
MRF6V2010NR1
DISTI # 27607406
NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant
469
  • 250:$13.5800
  • 100:$15.0800
  • 25:$18.0200
  • 10:$18.0400
  • 1:$19.4800
MRF6V2010NR1
DISTI # MRF6V2010NR1
NXP SemiconductorsTrans MOSFET N-CH 110V 3-Pin TO-270 T/R (Alt: MRF6V2010NR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel
Europe - 393
  • 500:€14.5900
  • 1000:€13.9900
  • 2000:€13.3900
  • 3000:€12.4900
  • 5000:€11.5900
MRF6V2010NR1
DISTI # MRF6V2010NR1
NXP SemiconductorsTrans MOSFET N-CH 110V 3-Pin TO-270 T/R - Tape and Reel (Alt: MRF6V2010NR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$13.5900
  • 1000:$13.4900
  • 2000:$13.4900
  • 3000:$13.4900
  • 5000:$13.3900
MRF6V2010NR1
DISTI # 31AC6681
NXP SemiconductorsTRANSISTOR, RF, 110V, TO-270-2,Drain Source Voltage Vds:110VDC,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-270,No. of Pins:2Pins,RoHS Compliant: Yes529
  • 1:$25.2600
  • 10:$23.3000
  • 25:$20.3300
  • 50:$20.1200
  • 100:$19.9000
  • 250:$19.0600
MRF6V2010NR1
DISTI # 47M2186
NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, TO-270, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:10W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes0
  • 1:$24.7400
  • 500:$13.9800
MRF6V2010NR1.
DISTI # 27AC9275
NXP SemiconductorsLATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 10-450 MHZ, 10 W, 50 V0
  • 1:$24.7400
  • 500:$13.9800
MRF6V2010NR1NXP SemiconductorsRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
RoHS: Compliant
1000Reel
  • 500:$12.0500
MRF6V2010NR1
DISTI # 841-MRF6V2010NR1
NXP SemiconductorsRF MOSFET Transistors VHV6 10W TO270-2N
RoHS: Compliant
1529
  • 1:$25.2600
  • 5:$24.1500
  • 10:$23.3000
  • 25:$20.3300
  • 100:$19.9000
  • 250:$19.0600
  • 500:$17.5400
MRF6V2010NR1
DISTI # MRF6V2010NR1
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
1265
  • 1:$21.8800
  • 10:$19.7800
  • 25:$18.7000
MRF6V2010NR1
DISTI # C1S233100359787
NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant
469
  • 250:$13.5800
  • 100:$15.0800
  • 25:$18.0200
  • 10:$18.0400
  • 1:$19.4800
MRF6V2010NR1
DISTI # 2776251
NXP SemiconductorsTRANSISTOR, RF, 110V, TO-270-2
RoHS: Compliant
529
  • 1:£15.3200
  • 5:£14.7300
  • 10:£14.1400
  • 50:£13.1100
  • 100:£12.0700
MRF6V2010NR1
DISTI # 2776251
NXP SemiconductorsTRANSISTOR, RF, 110V, TO-270-2
RoHS: Compliant
529
  • 1:$30.3700
  • 5:$29.1100
  • 10:$26.8700
  • 50:$25.4000
  • 100:$24.0900
  • 250:$22.9000
MRF6V2010NR1
DISTI # XSFT00000023892
NXP SemiconductorsMNR18 SERIES 8 ELEMENT 0602 X 8 100 K 5 % SMTCOMPACT CHIP RESISTOR NETWORK
RoHS: Compliant
1000
  • 500:$21.4600
Bild Teil # Beschreibung
ADSP-CM403CSWZ-CF

Mfr.#: ADSP-CM403CSWZ-CF

OMO.#: OMO-ADSP-CM403CSWZ-CF

Digital Signal Processors & Controllers - DSP, DSC ARM CORTEX M4 FLASH 13+ ENOB DC 240MHz
MRF300BN

Mfr.#: MRF300BN

OMO.#: OMO-MRF300BN

RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
MRF1K50NR5

Mfr.#: MRF1K50NR5

OMO.#: OMO-MRF1K50NR5

RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
LT8609EMSE#PBF

Mfr.#: LT8609EMSE#PBF

OMO.#: OMO-LT8609EMSE-PBF

Switching Voltage Regulators 42V, 2A Synchronous Step-Down Regulator with 2.5 A Quiescent Current
5961001801

Mfr.#: 5961001801

OMO.#: OMO-5961001801

Ferrite Toroids / Ferrite Rings 61 TOROID 6.35mm 22.1mm
C1206X103KARACAUTO

Mfr.#: C1206X103KARACAUTO

OMO.#: OMO-C1206X103KARACAUTO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 250V 0.01uF X7R 1206 10% AEC-Q200
ADSP-CM403CSWZ-CF

Mfr.#: ADSP-CM403CSWZ-CF

OMO.#: OMO-ADSP-CM403CSWZ-CF-ANALOG-DEVICES-INC-ADI

Digital Signal Processors & Controllers - DSP, DSC ARM CORTEX M4 FLASH 13+ ENOB DC 240MHz
2-5174225-5

Mfr.#: 2-5174225-5

OMO.#: OMO-2-5174225-5-TE-CONNECTIVITY

D-Sub Standard Connectors PLUG 68P R/A Series II boardlock
5961001801

Mfr.#: 5961001801

OMO.#: OMO-5961001801-FAIR-RITE

EMI/RFI Suppressors & Ferrites Ferrite Toroids / Ferrite Rings 61 TOROID 6.35mm 22.1mm
MRF1K50NR5

Mfr.#: MRF1K50NR5

OMO.#: OMO-MRF1K50NR5-NXP-SEMICONDUCTORS

WIDEBAND RF POWER LDMOS TRANSIST
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von MRF6V2010NR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
25,26 $
25,26 $
5
24,15 $
120,75 $
10
23,30 $
233,00 $
25
20,33 $
508,25 $
100
19,90 $
1 990,00 $
250
19,06 $
4 765,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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