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BLT80

BLT80
Mfr. #:
BLT80
Hersteller:
NXP Semiconductors
Beschreibung:
TRANS,NPN,10V,0.25A, SOT223
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BLT80 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
BLT80, BLT8, BLT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
RF TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:10V; Typ Gain Bandwidth ft:900MHz; Power Dissipation Pd:2.9W; DC Collector Current:250mA; DC Current Gain hFE:25; Associated Gain Ga:6dB;
***nell
RF TRANSISTOR, NPN, SOT-223; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:10V; Continuous Collector Current Ic:500mA; ft, Typ:900MHz; Case Style:SOT-223; Power Dissipation Pd:2.9W; Termination Type:SMD; Associated Gain Ga:6dB; External Depth:7.5mm; External Length / Height:1.7mm; Test Frequency:900MHz; Transistors, No. of:1; Width, External:6.7mm; Current Ic Max:500mA; Current Ic av:750mA; Current Ic hFE:100mA; Efficiency:60%; Load Power:0.8W; Min Hfe:25; Min Power Gain Gp:6dB; Power, Ptot:2W; Supply Voltage:7.5V; Voltage, Vcbo:16V; Width, Tape:12mm
***ment14 APAC
Prices include import duty and tax. TRANS,NPN,10V,0.25A, SOT223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:10V; Transition Frequency ft:900MHz; Power Dissipation Pd:2W; DC Collector Current:250mA; DC Current Gain hFE:25hFE; RF Transistor Case:SOT-223; No. of Pins:4Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Associated Gain Ga:6dB; Av Current Ic:250mA; Continuous Collector Current Ic:250mA; Continuous Collector Current Ic Max:250mA; Current Ic hFE:150mA; Efficiency:60%; External Depth:7.5mm; External Length / Height:1.7mm; External Width:6.7mm; Gain Bandwidth ft Typ:900MHz; Hfe Min:25; Load Power:800mW; No. of Transistors:1; Power Dissipation Ptot Max:2W; Power Gain Gp Min:6dB; Supply Voltage:7.5V; Termination Type:Surface Mount Device; Test Frequency:900MHz; Transistor Case Style:SOT-223; Voltage Vcbo:20V
Teil # Mfg. Beschreibung Aktie Preis
BLT80,115
DISTI # BLT80,115-ND		NXP SemiconductorsRF TRANS NPN 10V 900MHZ SOT223
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    SBLT800
    DISTI # 79Y3335    		Pentair Equipment Protection - HoffmanPower Terminal SBLT 8000
      BLT80,115
      DISTI # 771-BLT80-T/R      		NXP SemiconductorsRF Bipolar Transistors NPN 7.5V 250mA UHF
      RoHS: Compliant      		0
        BLT80NXP Semiconductors 1010
          BLT80Philips Semiconductors 1000
            BLT80 115NXP Semiconductors 4000
              BLT80
              DISTI # 742090              		NXP SemiconductorsTRANS,NPN,10V,0.25A, SOT223
              RoHS: Not Compliant              		0
              • 1000:$1.9900
              • 500:$2.1000
              • 100:$2.4600
              • 10:$3.2500
              • 1:$3.7300
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              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              3000
              Menge eingeben:
              Der aktuelle Preis von BLT80 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
              Referenzpreis (USD)
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